Intersil Corporation HGTG24N60D1D Datasheet
April 1995
HGTG24N60D1D
24A, 600V N-Channel IGBT
with Anti-Parallel Ultrafast Diode
Features
• 24A, 600V
• Latch Free Operation
• Typical Fall Time <500ns
• Low Conduction Loss
• With Anti-Parallel Diode
< 60ns
•t
RR
Description
The IGBT is a MOS gated high voltage switching device
combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between +25
parallel with the IGBT is an ultrafast (t
recovery characteristic.
The IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contactors.
o
C and +150oC. The diode used in
< 60ns) with soft
RR
Package
JEDEC STYLE TO-247
EMITTER
COLLECTOR
GATE
COLLECTOR
(BOTTOM SIDE
METAL)
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
E
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
HGTG24N60D1D TO-247 G24N60D1D
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings T
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Switching Safe Operating Area at TJ = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA 60A at 0.8 BV
Diode Forward Current at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .TJ, T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
(0.125 inch from case for 5s)
NOTE: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
= +25oC, Unless Otherwise Specific
C
3-107
CES
CGR
C25
C90
CM
GES
F25
F90
STG
HGTG24N60D1D UNITS
600 V
600 V
40 A
24 A
96 A
±25 V
CES
40 A
24 A
D
L
125 W
-55 to +150
260
File Number 2797.4
-
o
C
o
C
Specifications HGTG24N60D1D
Electrical Specifications T
= +25oC, Unless Otherwise Specified
C
PARAMETERS SYMBOL TEST CONDITIONS
Collector-Emitter Breakdown Voltage BV
Collector-Emitter Leakage Voltage I
Collector-Emitter Saturation Voltage V
Gate-Emitter Threshold Voltage V
Gate-Emitter Leakage Current I
Gate-Emitter Plateau Voltage V
On-State Gate Charge Q
Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-Off Energy (Note 1) W
Thermal Resistance (IGBT) R
Thermal Resistance Diode R
Diode Forward Voltage V
Diode Reverse Recovery Time t
NOTE: 1. T urn-Off Energy Loss (W
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
OFF
ending at the point where the collector current equals zero (ICE = 0A) The HGTG24N60D1D was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total T urn-Of f Energy Loss.
CES
CES
CE(SAT)
GE(TH)
GES
GEP
G(ON)
D(ON)I
RI
D(OFF)I
FI
OFF
θJC
θJC
EC
RR
LIMITS
UNITSMIN TYP MAX
IC = 280µA, VGE = 0V 600 - - V
VCE = BV
CES
VCE = 0.8 BV
IC = I
,
C90
VGE = 15V
IC = 250µA,
VCE = V
GE
TC = +25oC - - 280 µA
CESTC
= +125oC - - 5.0 mA
TC = +25oC - 1.7 2.3 V
TC = +125oC - 1.9 2.5 V
TC= +25oC 3.0 4.5 6.0 V
VGE = ±20V - - ±500 nA
IC = I
, VCE = 0.5 BV
C90
IC = I
,
C90
VCE = 0.5 BV
L = 500µH, IC = I
VGE = 15V - 120 155 nC
CES
VGE = 20V - 155 200 nC
, RG = 25Ω,
C90
VGE = 15V, TJ = +150oC,
VCE = 0.8 BV
CES
CES
- 6.3 - V
- 100 - ns
- 150 - ns
- 700 900 ns
- 450 600 ns
- 4.3 - mJ
- - 1.00
- - 1.50
o
C/W
o
C/W
IEC = 24A - - 1.50 V
IEC = 24A, di/dt = 100A/µs--60ns
Typical Performance Curves
40
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V
30
T
= +150oC
20
10
, COLLECTOR-EMITTER CURRENT (A)
CE
I
0
0246810
C
TC = +25oC
TC = -40oC
VGE, GATE-TO-EMITTER VOLTAGE (V)
CE
= 15V
40
35
30
25
20
15
10
5
, COLLECTOR-EMITTER CURRENT (A)
CE
I
0
012345
FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL) FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)
3-108
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, T
= 15V
V
GE
VGE = 5.0V
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
CE
= +25oC
C
VGE = 10V
VGE = 7.0V
VGE = 6.5V
VGE = 6.0V
VGE = 5.5V
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