Intersil Corporation HGTG24N60D1 Datasheet
HGTG24N60D1
May 1995
Features
• 24A, 600V
• Latch Free Operation
• Typical Fall Time <500ns
• High Input Impedance
• Low Conduction Loss
Description
The IGBT is a MOS gated high voltage switching device
combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between +25
IGBTs are ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
PACKAGING AVAILABILITY
o
C and +150oC.
24A, 600V N-Channel IGBT
Package
JEDEC STYLE TO-247
COLLECTOR
(BOTTOM SIDE
METAL)
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
G
EMITTER
COLLECTOR
GATE
C
PART NUMBER PACKAGE BRAND
HGTG24N60D1 TO-247 G24N60D1
Absolute Maximum Ratings T
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
at VGE = 15V at TC = +90oC . . . . . . . . . . . . . . . . . . . . I
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Switching Safe Operating Area at TJ = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA 60A at 0.8 BV
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .TJ, T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
(0.125 inch from case for 5s)
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
= +25oC, Unless Otherwise Specific
C
3-103
HGTG24N60D1 UNITS
CES
CGR
C25
C90
CM
GES
D
STG
L
E
600 V
600 V
40 A
24 A
96 A
±25 V
CES
125 W
-55 to +150
260
File Number 2831.3
-
o
C
o
C
Specifications HGTG24N60D1
Electrical Specifications T
= +25oC, Unless Otherwise Specified
C
PARAMETERS SYMBOL TEST CONDITIONS
Collector-Emitter Breakdown Voltage BV
Collector-Emitter Leakage Voltage I
Collector-Emitter Saturation Voltage V
Gate-Emitter Threshold Voltage V
Gate-Emitter Leakage Current I
Gate-Emitter Plateau Voltage V
On-State Gate Charge Q
Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
CES
CES
CE(SAT)
GE(TH)
GES
GEP
G(ON)
D(ON)I
RI
D(OFF)I
LIMITS
UNITSMIN TYP MAX
IC = 250µA, VGE = 0V 600 - - V
VCE = BV
CES
VCE = 0.8 BV
IC = I
,
C90
TC = +25oC - - 1.0 mA
CESTC
= +125oC - - 4.0 mA
TC = +25oC - 1.7 2.3 V
VGE = 15V
TC = +125oC - 1.9 2.5 V
IC = 250µA,
VCE = V
GE
TC= +25oC 3.0 4.5 6.0 V
VGE = ±20V - - ±500 nA
IC = I
, VCE = 0.5 BV
C90
IC = I
,
C90
VCE = 0.5 BV
CES
L = 500µH, IC = I
CES
VGE = 15V - 120 155 nC
VGE = 20V - 155 200 nC
, RG = 25Ω,
C90
- 6.3 - V
- 100 - ns
VGE = 15V, TJ = +150oC,
VCE = 0.8 BV
CES
- 150 - ns
- 700 900 ns
Current Fall Time t
Turn-Off Energy (Note 1) W
Thermal Resistance R
NOTE: 1. T urn-Off Energy Loss (W
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
OFF
FI
OFF
θJC
- 450 600 ns
- 4.3 - mJ
- - 1.00
ending at the point where the collector current equals zero (ICE = 0A) The HGTG24N60D1 was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total T urn-Of f Energy Loss.
Typical Performance Curves
40
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V
30
20
T
= +150oC
C
10
, COLLECTOR-EMITTER CURRENT (A)
CE
I
0
0246810
TC = +25oC
TC = -40oC
V
, GATE-TO-EMITTER VOLTAGE (V)
GE
CE
= 15V
FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL) FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)
40
35
30
25
20
15
10
5
, COLLECTOR-EMITTER CURRENT (A)
CE
I
0
012345
VGE = 15V
C
o
= +25
C
DUTY CYCLE < 0.5%, T
PULSE DURATION = 250µs
V
, COLLECTOR-TO-EMITTER VOLTAGE (V)
CE
VGE = 10V
o
C/W
VGE = 7.0V
VGE = 6.5V
VGE = 6.0V
VGE = 5.5V
VGE = 5.0V
3-104
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