Intersil Corporation HGTG20N60C3D Datasheet

HGTG20N60C3D

Data Sheet January 2000

45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25

C and 150oC. The IGBT used is developmenttypeTA49178. The diode used in anti-parallel with the IGBT is the RHRP3060 (TA49063).

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly developmental type TA49179.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG20N60C3D TO-247 G20N60C3D

NOTE: When ordering, use the entire part number.

File Number 4494.2

Features

• 45A, 600V, TC = 25oC

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 108ns at T

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

Packaging

JEDEC STYLE TO-247

= 150oC

Symbol

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

HGTG20N60C3D

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Speciﬁed

HGTG20N60C3D UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

600 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

GES

GEM

45 A 20 A

300 A

±20 V ±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 20A at 600V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

164 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.32 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

STG

L SC SC

-55 to 150 260

4 µs

10 µs

NOTES:

1. Pulse width limited by maximum junction temperature.

2. V

Electrical Speciﬁcations T

= 360V, TJ = 125oC, RG = 10Ω.

CE(PK)

= 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV Collector to Emitter Leakage Current I

CES

IC = 250µA, VGE = 0V 600 - - V VCE = BV

CES

TC = 25oC - - 250 µA TC = 150oC - - 5.0 mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA TJ = 150oC, RG =

Gate to Emitter Plateau Voltage V On-State Gate Charge Q

Current Turn-On Delay Time t Current Rise Time t Current Turn-Off Delay Time t Current Fall Time t Turn-On Energy E Turn-Off Energy (Note 3) E

GEP

G(ON)

d(ON)I

d(OFF)I

OFF

= I

C110

VGE = 15V

IC = 250µA, VCE = V

TC = 25oC - 1.4 1.8 V TC = 150oC - 1.5 1.9 V

3.4 4.8 6.3 V

VGE = ±20V - - ±250 nA

VCE = 480V 120 - - A 10Ω, VGE = 15V, L = 100µH

ICE = I ICE = I

, VCE = 0.5 BV

C110 C110

VCE = 0.5 BV

IGBT and Diode at TJ = 25oC ICE = I

C110

VCE = 0.8 BV VGE = 15V

VCE = 600V 20 - - A

CES

- 8.4 - V

VGE = 15V - 91 110 nC

CES

VGE = 20V - 122 145 nC

-2832ns

CES

-2428ns

- 151 210 ns

RG= 10Ω L = 1mH Test Circuit (Figure 19)

-5598ns

- 500 550 µJ

- 500 700 µJ

HGTG20N60C3D

Electrical Speciﬁcations T

= 25oC, Unless Otherwise Speciﬁed (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t Turn-On Energy E Turn-Off Energy (Note 3) E Diode Forward Voltage V Diode Reverse Recovery Time t

OFF

IGBT and Diode at TJ = 150oC ICE = I

C110

VCE = 0.8 BV

CES

VGE = 15V

-2832ns

-2428ns

- 280 450 ns

RG= 10Ω L = 1mH Test Circuit (Figure 19)

- 108 210 ns

- 1.0 1.1 mJ

- 1.2 1.7 mJ IEC = 20A - 1.5 1.9 V IEC = 20A, dIEC/dt = 200A/µs--55ns IEC = 2A, dIEC/dt = 200A/µs - 32 47 ns

Thermal Resistance Junction To Case R

θJC

IGBT - - 0.76 Diode - - 1.2

NOTES:

3. Turn-OffEnergy Loss (E

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

OFF

at the point where the collector current equals zero (ICE= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Typical Performance Curves Unless Otherwise Speciﬁed

o o

C/W C/W

, DC COLLECTOR CURRENT (A)

25 75 100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

= 15V

140

TJ= 150oC, RG = 10Ω, VGE= 15V, L = 100µH

120

100

, COLLECTOR TO EMITTER CURRENT (A)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

300 400200100 500 600

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

700

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