Intersil Corporation HGTG20N60B3D Datasheet
HGTG20N60B3D
Data Sheet January 2000
40A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG20N60B3D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and bipolar transistors. The device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state
voltage drop varies only moderately between 25
o
150
C. The diode used in anti-parallel with the IGBT is the
o
C and
RHRP3060.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential.
Formerly developmental type TA49016.
Ordering Information
PART NUMBER PACKAGE BRAND
HGTG20N60B3D TO-247 G20N60B3D
NOTE: When ordering, use the entire part number.
File Number 3739.6
Features
• 40A, 600V at TC = 25oC
• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150
• Short Circuit Rated
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(BOTTOM SIDE METAL)
o
C
Symbol
C
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
| Copyright © Intersil Corporation 2000
HGTG20N60B3D
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
HGTG20N60B3D UNITS
Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
Collector to Gate Voltage, RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Collector Current Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Average Diode Forward Current at 110oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(AVG)
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
CES
CGR
C25
C110
CM
GES
GEM
600 V
600 V
40 A
20 A
20 A
160 A
±20 V
±30 V
Switching Safe Operating Area at TC = 150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA 30A at 600V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
165 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.32 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . .TJ,T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
STG
L
SC
SC
-40 to 150
260
4 µs
10 µs
o
C
o
C
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE = 360V, TC = 125oC, RG = 25Ω.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BV
Collector to Emitter Leakage Current I
CES
CES
IC = 250µA, VGE = 0V 600 - - V
VCE = BV
CES
TC = 25oC - - 250 µA
TC = 150oC - - 2.0 mA
Collector to Emitter Saturation Voltage V
Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I
CE(SAT)
GE(TH)
GES
Switching SOA SSOA TC = 150oC
IC = I
VGE = 15V
IC = 250µA, VCE = V
C110
,
TC = 25oC - 1.8 2.0 V
TC = 150oC - 2.1 2.5 V
GE
3.0 5.0 6.0 V
VGE = ±20V - - ±100 nA
VCE= 480V 100 - - A
VGE= 15V,
VCE= 600V 30 - - A
RG = 10Ω,
L = 45µH
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q
Current Turn-On Delay Time t
d(ON)I
Current Rise Time t
Current Turn-Off Delay Time t
d(OFF)I
Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Diode Forward Voltage V
Diode Reverse Recovery Time t
GEP
G(ON)
rI
fI
ON
OFF
EC
rr
IC = I
IC = I
VCE = 0.5 BV
TC = 150oC,
ICE = I
VCE = 0.8 BV
VGE = 15V
RG = 10Ω,
L = 100µH
, VCE = 0.5 BV
C110
,
C110
C110
CES
- 8.0 - V
VGE = 15V - 80 105 nC
CES
VGE = 20V - 105 135 nC
-25-ns
-20-ns
CES,
- 220 275 ns
- 140 175 ns
- 475 - µJ
- 1050 - µJ
IEC = 20A - 1.5 1.9 V
IEC= 20A, dIEC/dt = 100A/µs--55ns
IEC = 1A, dIEC/dt = 100A/µs--45ns
Thermal Resistance R
θJC
IGBT - - 0.76
Diode - - 1.2
o
o
C/W
C/W
NOTE:
3. Turn-OffEnergy Loss (E
) is defined as the integralof the instantaneouspower loss starting at the trailing edge of the input pulseand ending
OFF
at the point where the collector current equals zero (ICE = 0A) The HGTG20N60B3D was tested per JEDEC standard No. 24-1 Method for
Measurement of Power DeviceTurn-Off Switching Loss. This test method producesthe true total Turn-OffEnergy Loss. Turn-Onlosses include
diode losses.
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