Intersil Corporation HGTP20N60B3, HGTP20N60B3, HGTG20N60B3, HGT1S20N60B3S Datasheet
HGT1S20N60B3S, HGTP20N60B3,
HGTG20N60B3
Data Sheet January 2000
40A, 600V, UFS Series N-Channel IGBTs
The HGT1S20N60B3S, the HGTP20N60B3 and the
HGTG20N60B3 are Generation III MOS gated high voltage
switching devices combining the best features of MOSFETs
and bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
o
C and 150oC.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49050.
Ordering Information
PART NUMBER PACKAGE BRAND
HGTP20N60B3 TO-220AB G20N60B3
File Number 3723.6
Features
• 40A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150
• Short Circuit Rated
• Low Conduction Loss
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-263AB
G
E
COLLECTOR
(FLANGE)
o
C
HGT1S20N60B3S TO-263AB G20N60B3
HGTG20N60B3 TO-247 HG20N60B3
NOTE: Whenordering, use the entire part number.Addthesuffix9A
to obtain the TO-263AB in tape and reel, i.e., HGT1S20N60B3S9A.
Symbol
C
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
JEDEC TO-220AB (ALTERNATE VERSION)
E
C
COLLECTOR
(FLANGE)
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(FLANGE)
G
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
| Copyright © Intersil Corporation 2000
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
HGT1S20N60B3S
HGTP20N60B3
HGTG20N60B3 UNITS
Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
Collector to Gate Voltage, RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
CGR
600 V
600 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
C25
C110
CM
GES
GEM
40 A
20 A
160 A
±20 V
±30 V
Switching Safe Operating Area at TC = 150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA 30A at 600V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
165 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.32 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . .TJ,T
STG
-40 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
SC
SC
300
260
4 µs
10 µs
o
C
o
C
o
C
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE = 360V, TC = 125oC, RG = 25Ω.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BV
Collector to Emitter Leakage Current I
CES
CES
IC = 250µA, VGE = 0V 600 - - V
VCE = BV
CES
TC = 25oC - - 250 µA
TC = 150oC - - 1.0 mA
Collector to Emitter Saturation Voltage V
CE(SAT)IC
= I
, VGE = 15V TC = 25oC - 1.8 2.0 V
C110
TC = 150oC - 2.1 2.5 V
Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I
GE(TH)
GES
Switching SOA SSOA TC = 150oC, VGE=
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q
Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Thermal Resistance R
GEP
G(ON)
d(ON)I
rI
d(OFF)I
fI
ON
OFF
θJC
IC = 250µA, VCE = V
GE
3.0 5.0 6.0 V
VGE = ±20V - - ±100 nA
VCE= 480V 100 - - A
15V, RG = 10Ω, L =
45µH
IC = I
IC = I
VCE = 0.5 BV
, VCE = 0.5 BV
C110
,
C110
CES
TC = 150oC
ICE = I
C110
VCE = 0.8 BV
CES
VGE = 15V
RG= 10Ω
L = 100µH
VCE= 600V 30 - - A
CES
- 8.0 - V
VGE = 15V - 80 105 nC
VGE = 20V - 105 135 nC
-25-ns
-20-ns
- 220 275 ns
- 140 175 ns
- 475 - µJ
- 1050 - µJ
- - 0.76
NOTE:
3. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting atthe trailing edge of the input pulse and ending
OFF
at the point where the collector current equals zero (ICE = 0A). The HGT1S20N60B3S, HGTP20N60B3 and HGTG20N60B3 were tested per
JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total TurnOff Energy Loss. Turn-On losses include diode losses.
o
C/W
2
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