Intersil Corporation HGTG20N60A4D Datasheet

HGTG20N60A4D

Data Sheet October 1999

600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode

The HGTG20N60A4D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and bipolar transistors. This device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25

o

C and 150oC. The
IGBT used is the development type TA49339. The diode
used in anti-parallel is the development type TA49372.

This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been

optimized for high frequency switch mode power
supplies.

Formerly Developmental Type TA49341.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG20N60A4D TO-247 20N60A4D

NOTE: When ordering, use the entire part number.

File Number 4790

Features

• >100kHz Operation At 390V, 20A

• 200kHz Operation At 390V, 12A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at T

• Low Conduction Loss

• Temperature Compensating SABER™ Model
www.intersil.com

Packaging

JEDEC STYLE TO-247

E

C

G

COLLECTOR

(FLANGE)

= 125oC

J

Symbol

C

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 407-727-9207

| Copyright © Intersil Corporation 1999

SABER™ is a trademark of Analogy, Inc.

HGTG20N60A4D

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTG20N60A4D UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

600 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

CM

GES

GEM

70 A
40 A

280 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 100A at 600V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

290 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.32 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

STG

L

-55 to 150
260

o

C

o

C

NOTE:

1. Pulse width limited by maximum junction temperature.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Collector to Emitter Leakage Current I

CES

CES

IC = 250µA, VGE = 0V 600 - - V
VCE = 600V TJ = 25oC - - 250 µA

TJ = 125oC - - 3.0 mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA TJ = 150oC, RG = 3Ω, VGE = 15V,

= 20A,

VGE = 15V

TJ = 25oC - 1.8 2.7 V

TJ = 125oC - 1.6 2.0 V
IC = 250µA, VCE = 600V 4.5 5.5 7.0 V
VGE = ±20V - - ±250 nA

100 - - A

L = 100µH, VCE = 600V

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 3) E
Turn-On Energy (Note 3) E
Turn-Off Energy (Note 2) E
Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 3) E
Turn-On Energy (Note 3) E
Turn-Off Energy (Note 2) E
Diode Forward Voltage V

GEP

g(ON)

rI

fI
ON1
ON2
OFF

rI

fI
ON1
ON2
OFF

EC

IC = 20A, VCE = 300V - 8.6 - V
IC = 20A,

VCE = 300V

IGBT and Diode at TJ = 25oC,
ICE = 20A,
VCE = 390V,
VGE = 15V,
RG = 3Ω,
L = 500µH,
Test Circuit Figure 24

VGE = 15V - 142 162 nC
VGE = 20V - 182 210 nC

-15- ns

-12- ns

-73- ns

-32- ns

- 105 - µJ

- 280 350 µJ

- 150 200 µJ

IGBT and Diode at TJ = 125oC,
ICE = 20A,
VCE = 390V, VGE = 15V,
RG= 3Ω,
L = 500µH,
Test Circuit Figure 24

-1521ns

-1318ns

- 105 135 ns

-5573ns

- 115 - µJ

- 510 600 µJ

- 330 500 µJ

IEC = 20A - 2.3 - V

2

HGTG20N60A4D

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Diode Reverse Recovery Time t

rr

IEC = 20A, dIEC/dt = 200A/µs - 35 - ns
IEC = 1A, dIEC/dt = 200A/µs - 26 - ns

Thermal Resistance Junction To Case R

θJC

IGBT - - 0.43
Diode - - 1.9

NOTE:

2. Turn-OffEnergy Loss (E

) is defined as the integral of the instantaneouspower loss starting at the trailing edge of theinput pulse and ending

OFF

at the point where the collector current equals zero (ICE= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E

is the turn-on loss of the IGBT only. E

ON1

is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 20.

Typical Performance Curves Unless Otherwise Specified

100

DIE CAPABILITY

80

PACKAGE LIMIT

60

40

20

, DC COLLECTOR CURRENT (A)

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

VGE= 15V

120

TJ= 150oC, RG = 3Ω, VGE= 15V, L = 100µH

100

80

60

40

20

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

300 400200100 500 600

o
o

C/W
C/W

ON2

700

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

500

300

f

= 0.05 / (t

MAX1

= (PD- PC) / (E

f

100

MAX2

PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)

, OPERATING FREQUENCY (kHz)

R

= 0.43oC/W, SEE NOTES

ØJC

MAX

f

TJ= 125oC, RG = 3Ω, L = 500µH, VCE= 390V

40

5

ICE, COLLECTOR TO EMITTER CURRENT (A)

d(OFF)I

+ t

ON2

d(ON)I

+ E

OFF

)

)

TCV

o

C

75

GE

15V

4030

FIGURE 3. OPERATINGFREQUENCY vs COLLECTORTO

EMITTER CURRENT

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

VCE = 390V, RG = 3Ω, TJ= 125oC

12

10

8

6

4

2

, SHORT CIRCUIT WITHSTAND TIME (µs)

0

SC

t

5010 20

10 11 12 15

VGE, GATE TO EMITTER VOLTAGE (V)

I

SC

t

SC

13 14

45014

400

350

300

250

200

150

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

100

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

3