Intersil Corporation HGTP20N60A4, HGTG20N60A4 Datasheet

HGTG20N60A4, HGTP20N60A4

Data Sheet October 1999

600V, SMPS Series N-Channel IGBTs

The HGTG20N60A4 and HGTP20N60A4 are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have
the high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25
and 150

o

C.

o

This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been

optimized for high frequency switch mode power
supplies.

Formerly Developmental Type TA49339.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTP20N60A4 TO-220AB 20N60A4
HGTG20N60A4 TO-247 20N60A4

NOTE: When ordering, use the entire part number.

File Number 4781.1

Features

• >100kHz Operation at 390V, 20A

• 200kHz Operation at 390V, 12A

• 600V Switching SOA Capability

C

• Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at T

= 125oC

J

• Low Conduction Loss

• Temperature Compensating SABER™ Model
www.intersil.com

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards

Packaging

JEDEC TO-220AB ALTERNATE VERSION

E

C

COLLECTOR

(FLANGE)

G

Symbol

C

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

JEDEC STYLE TO-247

E

COLLECTOR

(FLANGE)

C

G

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

SABER™ is a trademark of Analogy, Inc.

1-888-INTERSIL or 407-727-9207

| Copyright © Intersil Corporation 1999

HGTG20N60A4, HGTP20N60A4

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTG20N60A4, HGTP20N60A4 UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

600 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

CM

GES

GEM

70 A
40 A

280 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 100A at 600V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

290 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.32 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

-55 to 150

Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

PKG

300

260

o

C

o

C

o

C

NOTE:

1. Pulse width limited by maximum junction temperature.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

CES
ECS

CES

IC = 250µA, VGE = 0V 600 - - V
IC = 10mA, VGE= 0V 15 - - V
VCE = 600V TJ = 25oC - - 250 µA

TJ = 125oC - - 2.0 mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA TJ = 150oC, RG = 3Ω, VGE = 15V

= 20A,

VGE = 15V

TJ = 25oC - 1.8 2.7 V

TJ = 125oC - 1.6 2.0 V
IC = 250µA, VCE = 600V 4.5 5.5 7.0 V
VGE = ±20V - - ±250 nA

100 - - A

L = 100µH, VCE= 600V

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 3) E
Turn-On Energy (Note 3) E
Turn-Off Energy (Note 2) E

GEP

g(ON)

rI

fI
ON1
ON2
OFF

IC = 20A, VCE = 300V - 8.6 - V
IC = 20A,

VCE = 300V

IGBT and Diode at TJ = 25oC
ICE = 20A
VCE = 390V
VGE =15V
RG= 3Ω
L = 500µH
Test Circuit (Figure 20)

VGE = 15V - 142 162 nC
VGE = 20V - 182 210 nC

-15- ns

-12- ns

-73- ns

-32- ns

- 105 - µJ

- 280 350 µJ

- 150 200 µJ

2

HGTG20N60A4, HGTP20N60A4

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 3) E
Turn-On Energy (Note 3) E
Turn-Off Energy (Note 2) E
Thermal Resistance Junction To Case R

rI

fI
ON1
ON2
OFF

θJC

IGBT and Diode at TJ = 125oC
ICE = 20A
VCE = 390V
VGE = 15V
RG= 3Ω
L = 500µH
Test Circuit (Figure 20)

-1521ns

-1318ns

- 105 135 ns

-5573ns

- 115 - µJ

- 510 600 µJ

- 330 500 µJ

- - 0.43

NOTES:

2. Turn-OffEnergyLoss (E

) isdefinedas the integralofthe instantaneous powerlossstarting at thetrailingedge of the inputpulse and ending

OFF

at the point where the collector current equals zero (ICE= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E

is the turn-on loss of the IGBT only. E

ON1

is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 20.

Typical Performance Curves Unless Otherwise Specified

100

DIE CAPABILITY

80

VGE= 15V

120

TJ= 150oC, RG = 3Ω, VGE= 15V, L = 100µH

100

o

C/W

ON2

PACKAGE LIMIT

60

40

20

, DC COLLECTOR CURRENT (A)

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTORCURRENT vs CASE

TEMPERATURE

500

300

f

= 0.05 / (t

MAX1

= (PD- PC) / (E

f

100

MAX2

P

= CONDUCTION DISSIPATION

C

, OPERATING FREQUENCY (kHz)

MAX

f

40

(DUTY FACTOR = 50%)

R

= 0.43oC/W, SEE NOTES

ØJC

TJ= 125oC, RG = 3Ω, L = 500µH, VCE= 390V

5

I

, COLLECTOR TO EMITTER CURRENT (A)

CE

d(OFF)I

ON2

+ t

d(ON)I

+ E

OFF

)

)

TCV

o

C

75

GE

15V

4030

FIGURE 3. OPERATINGFREQUENCY vs COLLECTORTO

EMITTER CURRENT

80

60

40

20

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

300 400200100 500 600

700

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

VCE = 390V, RG = 3Ω, TJ= 125oC

12

10

8

6

4

2

, SHORT CIRCUIT WITHSTAND TIME (µ s)

0

SC

t

5010 20

10

11 12 15

VGE, GATE TO EMITTER VOLTAGE (V)

I

SC

t

SC

13 14

45014

400

350

300

250

200

150

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

100

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

3