Intersil Corporation HGTG20N50C1D Datasheet

April 1995

HGTG20N50C1D

20A, 500V N-Channel IGBT

with Anti-Parallel Ultrafast Diode

Features

• 20A, 500V

• Latch Free Operation

• Typical Fall Time < 500ns

• High Input Impedance

• Low Conduction Loss

• With Anti-Parallel Diode
< 60ns

•t

RR

Description

The IGBT is a MOS gated high voltage switching device
combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between +25
parallel with the IGBT is an ultrafast (t
recovery characteristic.

IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are
essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contractors.

PACKAGING AVAILABILITY

PART NUMBER PACKAGE BRAND

HGTG20N50C1D TO-247 G20N50C1D

NOTE: When ordering, use the entire part number.

o

C and +150oC. The diode used in

< 60ns) with soft

RR

Package

JEDEC STYLE TO-247

COLLECTOR

(BOTTOM SIDE

METAL)

Terminal Diagram

G

EMITTER

COLLECTOR

GATE

C

E

Absolute Maximum Ratings T

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Diode Forward Current at TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

at TC = +90oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

NOTE: 1. TJ = +150oC, Minimum RGE = 25Ω without latch

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

= +25oC, Unless Otherwise Specified

C

3-71

CES

CGR

C25
C90

CM

GES

F25
F90

STG

HGTG20N50C1D UNITS

500 V
500 V

26 A
20 A
35 A

±20 V

26 A
20 A

D

L

75 W

-55 to +150
260

File Number 2796.3

o

C

o

C

Specifications HGTG20N50C1D

O

SS

O

(

)

Electrical Specifications T

= +25oC, Unless Otherwise Specified

C

PARAMETERS SYMBOL TEST CONDITIONS

Collector-Emitter Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Collector Current I

Gate-Emitter Leakage Current I
Collector-Emitter On-Voltage V

Gate-Emitter Plateau Voltage V
On-State Gate Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Energy Loss Per Cycle (Off Switching

Dissipation = W

x Frequency)

OFF

Thermal Resistance Junction-to-Case (IGBT) R
Thermal Resistance of Diode R
Diode Forward Voltage V
Diode Reverse Recovery Time t

CES

GE(TH)

CES

GES

CE(SAT)

GEP

G(ON)

D(ON)I

RI

D(OFF)I

FI

W

OFF

θJC

θJC

EC

RR

LIMITS

UNITSMIN MAX

IC = 1mA, VGE = 0V 500 - V
VGE = VCE, IC = 1mA 2 4.5 V
VCE = 500V - 250 µA
TC = +125oC, VCE = 500V - 1000 µA
VGE = ±20V, VCE = 0V - 100 nA
IC = 20A, VGE = 10V - 2.5 V
IC = 35A, VGE = 20V - 3.2 V
IC = 10A, VCE = 10V - 6 (Typ) V
IC = 10A, VCE = 10V - 33 (Typ) nC
IC = 20A, V

= 300V, L = 25µH,

CE(CLP)

-50ns

TJ = +100oC, VGE = 10V, RG = 25Ω

-50ns

- 400 ns

400 (Typ) 500 ns

IC = 20A, V

= 300V, L = 25µH,

CE(CLP)

1070 (Typ) µJ

TJ = +100oC, VGE = 10V, RG = 25Ω

- 1.25

o

C/W

- 1.5 ns
IEC = 20A - 1.8 V
IEC = 20A, diEC/dt = 100A/µs - 60 ns

Typical Performance Curves

100

%
N

80

IPATI

60

WER DI

40

20

RATED P

0 +25 +50 +75 +100 +125+150

, CASE TEMPERATURE (oC)

T

C

FIGURE 1. POWER DISSIPATION vs TEMPERATURE

DERATING CURVE

+150

1.3

1.2

1.1

1.0

0.9

0.8

0.7

NORMALIZED GATE THRESHOLD VOLTAGE (V)

-50 0 +50 +100 +150
T

, JUNCTION TEMPERATURE (oC)

J

VGE = VCE, IC = 1mA

FIGURE 2. TYPICAL NORMALIZED GA TE-THRESHOLD

VOLTAGE vs JUNCTION TEMPERATURE

3-72