Intersil Corporation HGTG20N120E2 Datasheet
Semiconductor
HGTG20N120E2
April 1995
Features
• 34A, 1200V
• Latch Free Operation
• Typical Fall Time - 780ns
• High Input Impedance
• Low Conduction Loss
Description
The HGTG20N120E2 is a MOS gated, high voltage switching device combining the best features of MOSFETs and
bipolar transistors. The device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The much lower on-state voltage drop
varies only moderately between +25
IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are
essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contactors.
The development type number for this device is TA49009.
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
HGTG20N120E2 TO-247 G20N120E2
o
C and +150oC.
34A, 1200V N-Channel IGBT
Package
JEDEC STYLE TO-247
COLLECTOR
(BOTTOM SIDE
METAL)
Terminal Diagram
G
EMITTER
COLLECTOR
GATE
C
E
Absolute Maximum Ratings T
Collector-Emitter Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Collector-Gate Breakdown Voltage R
Collector Current Continuous
At T
= +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
At TC = +90oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Switching SOA at T
Power Dissipation Total at T
Power Dissipation Derating T
Operating and Storage Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
(0.125" from case for 5 seconds)
Short Circuit Withstand Time (Note 2)
At V
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
GE
At VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE(PEAK)
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027
= +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA 100A at 0.8 BV
C
= 720V, TC = +125oC, RGE = 25Ω
= +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
> +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.20 W/oC
C
= +25oC, Unless Otherwise Specified
C
= 1MΩ. . . . . . . . . . . . . . . . . . . . . . . . . . . BV
GE
HGTG20N120E2 UNITS
CES
CGR
C25
C90
CM
GES
GEM
D
, T
J
STG
L
SC
SC
1200 V
1200 V
34
20
100 A
±20 V
±30 V
CES
150 W
-55 to +150
260
3
15
o
o
µs
µs
A
A
-
C
C
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
© Harris Corporation 1995
3-98
File Number 3370.2
Specifications HGTG20N120E2
Electrical Specifications T
= +25oC, Unless Otherwise Specified
C
LIMITS
PARAMETERS SYMBOL TEST CONDITIONS
Collector-Emitter Breakdown
BV
CESIC
= 250µA, VGE = 0V 1200 - - V
Voltage
Collector-Emitter Leakage Current I
Collector-Emitter Saturation
Voltage
V
CE(SAT)IC
Gate-Emitter Threshold Voltage V
Gate-Emitter Leakage Current I
Gate-Emitter Plateau Voltage V
On-State Gate Charge Q
Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
D(OFF)I
Current Fall Time t
Turn-Off Energy (Note 1) W
Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
D(OFF)I
Current Fall Time t
Turn-Off Energy (Note 1) W
Thermal Resistance R
CES
GE(TH)IC
GES
GEP
G(ON)IC
D(ON)
R
FI
OFF
D(ON)
R
FI
OFF
θJC
VCE = BV
V
I
C
CES
= 0.8 BV
CE
= I
= I
CES
, VGE = 15V TC = +25oC - 2.9 3.5 V
C90
, VGE = 10V TC = +25oC - 3.1 3.8 V
C90
= 500µA,
VCE = V
GE
VGE = ±20V - - ±250 nA
IC = I
, VCE = 0.5 BV
C90
= I
,
C90
VCE = 0.5 BV
CES
RL = 48Ω IC = I
L = 50µH - 520 620 ns
RL = 48Ω IC = I
L = 50µH - 420 520 ns
TC = +25oC - - 250 µA
TC = +125oC - - 1.0 mA
= +125oC - 3.0 3.6 V
T
C
T
= +125oC - 3.3 4.0 V
C
TC = +25oC 3.0 4.5 6.0 V
CES
- 7.0 - V
VGE = 15V - 110 150 nC
= 20V - 150 200 nC
V
GE
, VGE = 15V,
C90
VCE = 0.8 BV
RG = 25Ω,
CES
,
- 100 - ns
- 150 - ns
TJ = +125oC
- 780 1000 ns
- 7.0 - mJ
, VGE = 10V,
C90
VCE = 0.8 BV
RG = 25Ω,
CES
,
- 100 - ns
- 150 - ns
TJ = +125oC
- 780 1000 ns
- 7.0 - mJ
- 0.70 0.83
NOTE:
1. Turn-Off Energy Loss (W
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
OFF
ending at the point where the collector current equals zero (ICE = 0A). The HGTG20N120E2 was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
UNITMIN TYP MAX
o
C/W
3-99
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