Intersil Corporation HGTG20N120CND Datasheet

HGTG20N120CND

Data Sheet January 2000 File Number 4535.2

63A, 1200V, NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode

The HGTG20N120CND is a Non-Punch Through (NPT)
IGBT design. This is a new member of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on­state conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

Formerly Developmental Type TA49305.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG20N120CND TO-247 20N120CND

NOTE: When ordering, use the entire part number.

Features

• 63A, 1200V, TC = 25oC

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 340ns at T

• Short Circuit Rating

• Low Conduction Loss

Packaging

JEDEC STYLE TO-247

E

C

G

Symbol

= 150oC

J

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 2000

HGTG20N120CND

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTG20N120CND UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

CES

1200 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

CM

GES

GEM

63 A
30 A

160 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . .SSOA 100A at 1200V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

390 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .TJ, T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . t

Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

STG

L
SC
SC

-55 to 150
260

8 µs

15 µs

o

C

o

C

NOTES:

1. Pulse width limited by maximum junction temperature.

2. V

Electrical Specifications T

= 960V, TJ = 125oC, RG = 3Ω.

CE(PK)

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

CES
ECS

CES

IC = 250µA, VGE = 0V 1200 - - V
IC = 10mA, VGE= 0V 15 - - V
VCE = BV

CES

TC = 25oC - - 250 µA
TC = 125oC - 450 - µA
TC = 150oC--6mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)IC

GES

Switching SOA SSOA TJ = 150oC, RG = 3Ω, VGE = 15V,

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E

GEP

G(ON)

d(ON)I

rI

d(OFF)I

fI

ON

OFF

= 20A,

VGE = 15V

= 150µA, VCE = V

TC = 25oC - 2.1 2.4 V
TC = 150oC - 2.9 3.5 V

GE

6.0 6.9 - V

VGE = ±20V - - ±250 nA

100 - - A

L = 200µH, V
IC = 20A, VCE = 0.5 BV
IC = 20A,

VCE = 0.5 BV

IGBT and Diode at TJ = 25oC
ICE = 20A
VCE = 0.8 BV
VGE = 15V

CE(PK)

CES

CES

= 1200V

CES

- 10.2 - V
VGE = 15V - 155 200 nC
VGE = 20V - 200 250 nC

-2328ns

-1722ns

- 200 240 ns

RG= 3Ω
L = 1mH
Test Circuit (Figure 20)

- 220 270 ns

- 2.0 2.5 mJ

- 2.8 3.3 mJ

2

HGTG20N120CND

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Diode Forward Voltage V
Diode Reverse Recovery Time t

rI

fI

ON

OFF

EC

rr

IGBT and Diode at TJ = 150oC
ICE = 20A
VCE = 0.8 BV

CES

VGE = 15V

-2126ns

-1722ns

- 225 270 ns

RG= 3Ω
L = 1mH
Test Circuit (Figure 20)

- 340 400 ns

- 3.8 5.0 mJ

- 4.6 5.3 mJ

IEC = 20A - 2.6 3.2 V
IEC = 20A, dIEC/dt = 200A/µs - 62 75 ns
IEC = 2A, dIEC/dt = 200A/µs - 44 55 ns

Thermal Resistance Junction To Case R

θJC

IGBT - - 0.32
Diode - - 0.75

NOTE:

3. Turn-OffEnergy Loss (E

) is defined as theintegral of the instantaneous powerloss starting at the trailingedge of the input pulseand ending

OFF

at the point where the collector current equals zero (ICE= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Typical Performance Curves Unless Otherwise Specified

o
o

C/W
C/W

70

60

50

40

30

20

, DC COLLECTOR CURRENT (A)

10

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

V

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

GE

= 15V

120

TJ= 150oC, RG = 3Ω, VGE= 15V, L = 200µH

100

80

60

40

20

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

600 800400200 1000 1200

1400

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

3