Intersil Corporation HGTG20N120CN Datasheet

HGTG20N120CN

Data Sheet January 2000 File Number 4533.2

63A, 1200V, NPT Series N-Channel IGBT

The HGTG20N120CN is a Non-Punch Through (NPT) IGBT
design. This is a new member of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on­state conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

Formerly Developmental Type TA49289.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG20N120CN TO-247 G20N120CN

NOTE: When ordering, use the entire part number

Symbol

C

Features

• 63A, 1200V, TC = 25oC

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 340ns at T

• Short Circuit Rating

• Low Conduction Loss

• Avalanche Rated

• Temperature Compensating SABER™ Model
www.intersil.com

Packaging

JEDEC STYLE TO-247

E

C

G

= 150oC

J

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 2000

SABER™ is a trademark of Analogy, Inc.

HGTG20N120CN

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTG20N120CN UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

1200 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

CM

GES

GEM

63 A
30 A

160 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 100A at 1200V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

390 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12 W/oC

Forward Voltage Avalanche Energy (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

AV

STG

L
SC
SC

125 mJ

-55 to 150
260

8 µs

15 µs

o

C

o

C

NOTES:

1. Pulse width limited by maximum junction temperature.

2. ICE = 25A, L = 400µH, TJ = 25oC.

3. V

= 960V, TJ = 125oC, RG= 3Ω.

CE(PK)

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

CES
ECS

CES

IC = 250µA, VGE = 0V 1200 - - V
IC = 10mA, VGE= 0V 15 - - V
VCE = BV

CES

TC = 25oC - - 250 µA
TC = 125oC - 400 - µA
TC = 150oC--5mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

= 20A,

VGE = 15V
IC = 150µA, VCE = V

TC = 25oC - 2.1 2.4 V
TC = 150oC - 2.9 3.5 V

GE

VGE = ±20V - - ±250 nA

Switching SOA SSOA TJ = 150oC, RG = 3Ω, VGE = 15V,

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 5) E
Turn-On Energy (Note 5) E
Turn-Off Energy (Note 4) E

GEP

G(ON)

rI

fI
ON1
ON2
OFF

L = 200µH, V
IC = 20A, VCE = 0.5 BV
IC = 20A,

VCE = 0.5 BV
IGBT and Diode at TJ = 25oC

ICE = 20A
VCE = 0.8 BV
VGE = 15V
RG= 3Ω
L = 1mH
Test Circuit (Figure 18)

CE(PK)

CES

CES

= 1200V

CES

VGE = 15V - 155 200 nC
VGE = 20V - 200 250 nC

6.0 6.9 - V

100 - - A

- 10.2 - V

-2328ns

-1722ns

- 200 240 ns

- 220 270 ns

- 0.9 1.1 mJ

- 2.0 2.5 mJ

- 2.8 3.3 mJ

2

HGTG20N120CN

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 5) E
Turn-On Energy (Note 5) E
Turn-Off Energy (Note 4) E
Thermal Resistance Junction To Case R

rI

fI
ON1
ON2
OFF

θJC

IGBT and Diode at TJ = 150oC
ICE = 20A
VCE = 0.8 BV

CES

VGE = 15V
RG= 3Ω
L = 1mH
Test Circuit (Figure 18)

-2126ns

-1722ns

- 225 270 ns

- 340 400 ns

- 1.0 1.2 mJ

- 3.8 5.0 mJ

- 4.6 5.3 mJ

- - 0.32

NOTES:

4. Turn-OffEnergy Loss (E

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

OFF

at the point where the collector current equals zero (ICE= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E

is the turn-on loss of the IGBT only. E

ON1

is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 18.

Typical Performance Curves Unless Otherwise Specified

70

60

50

40

30

20

, DC COLLECTOR CURRENT (A)

10

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

VGE= 15V

120

TJ= 150oC, RG = 3Ω, VGE= 15V, L = 200µH

100

80

60

40

20

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

600 800400200 1000 1200

o

C/W

ON2

1400

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

V

TJ= 150oC, RG = 3Ω, L = 1mH,

100

50

10

f

= 0.05 / (t

MAX1

f

= (PD- PC) / (E

MAX2

, OPERATING FREQUENCY (kHz)

PC = CONDUCTION DISSIPATION

MAX

f

(DUTY FACTOR = 50%)
= 0.32oC/W, SEE NOTES

R

ØJC

1

5

I

CE

, COLLECTOR TO EMITTER CURRENT (A)

TC = 75oC, VGE = 15V, IDEAL DIODE

+ t

ON2

10

d(ON)I

+ E

OFF

)

)

d(OFF)I

CE

T

C

o

75

o

75

o

110
110oC

= 960V

C
C
C

20

V

15V
12V
15V
12V

GE

FIGURE 3. OPERATINGFREQUENCY vs COLLECTOR TO

EMITTER CURRENT

3

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

25

VCE = 960V, RG= 3Ω, TJ= 125oC

20

15

10

, SHORT CIRCUIT WITHSTAND TIME (µs)

5

SC

t

4030

12 13 14 15 16

VGE, GATE TO EMITTER VOLTAGE (V)

300

I

SC

250

200

t

SC

150

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

100

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME