Intersil Corporation HGTG20N120C3D Datasheet

HGTG20N120C3D

Data Sheet October 1998 File Number

45A, 1200V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode

The HGTG20N120C3D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and bipolar transistors. This device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

The diode used in anti-parallel with the IGBT was formerly
developmental type TA49155.

The IGBT diode combination was formerly developmental
type TA49264.

o

C and 150oC.

Features

• 45A, 1200V, TC = 25oC

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 300ns at T

• Short Circuit Rating

• Low Conduction Loss

Symbol

C

G

E

4508.1

= 150oC

J

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG20N120C3D TO-247 20N120C3D

NOTE: When ordering, use the entire part number.

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY

ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931
4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872
4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413
4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045
4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143
4,901,127 4,904,609 4,933,740 4,963,951
4,969,027

Packaging

JEDEC STYLE TO-247

E

C

G

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

HGTG20N120C3D

Absolute Maximum Ratings T

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

= 25oC, Unless Otherwise Specified

C

CES

HGTG20N120C3D UNITS

1200 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

CM

GES

GEM

45 A
20 A

160 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC, Figure 2. . . . . . . . . . . . . . . . . . . . . SSOA 20A at 1200V

Power Dissipation Total at TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

D

208 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67 W/oC

Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Junction Temperature Range. . . . . . . . . . . . . . . . . . . . .TJ, T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . t

Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

ARV
STG

L
SC
SC

100 mJ

-40 to 150
260

8 µs

15 µs

o

C

o

C

NOTES:

1. Pulse width limited by maximum junction temperature.

2. V

Electrical Specifications T

= 720V, TJ = 125oC, RGE = 3Ω.

CE(PK)

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

CE(SAT)IC

CES

CES

IC = 250µA, VGE = 0V 1200 - - V
VCE = BV

= I

C110

VGE = 15V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

GE(TH)

GES

IC = 250µA, VCE = V
VGE = ±20V - - ±250 nA

Switching SOA SSOA TJ = 150oC,

RG = 3Ω,
VGE = 15V

L = 100µH,
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

GEP

G(ON)

IC = I

IC = I

C110

C110

VCE = 0.5 BV

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 4) E
Turn-On Energy (Note 4) E
Turn-Off Energy (Note 3) E

rI

fI

ON1

ON2

OFF

IGBT and Diode at TJ = 25oC

ICE = I

C110

VCE = 0.8 BV

VGE = 15V

RG= 3Ω

L = 1mH

Test Circuit - (Figure 19)

CES

TC = 25oC - - 150 µA
TC = 150oC - - 2.0 mA

,

TC = 25oC - 2.4 3.0 V
TC = 150oC - 2.2 2.9 V

GE

V
V

, VCE = 0.5 BV
,

VGE = 15V - 93 130 nC

CES

VGE = 20V - 186 230 nC

CES

5.0 7.0 7.5 V

= 960V 60 - - A

CE (PK)

= 1200V 20 - - A

CE (PK)

CES

- 9.4 - V

-39- ns

-22- ns

- 110 - ns

-95- ns

- 950 - µJ

- 2250 - µJ

- 1200 2400 µJ

2

HGTG20N120C3D

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 4) E
Turn-On Energy (Note 4) E
Turn-Off Energy (Note 3) E
Diode Forward Voltage V
Diode Reverse Recovery Time t

rI

fI

ON1

ON2

OFF

EC

rr

IGBT and Diode at TJ = 150oC

ICE = I

C110

VCE = 0.8 BV

CES

VGE = 15V

RG= 3Ω

L = 1mH

Test Circuit - (Figure 19)

-39- ns

-20- ns

- 360 550 ns

- 300 400 ns

- 950 - µJ

- 3365 - µJ

- 4400 8000 µJ
IEC = 20A - 2.6 3.4 V
IEC= 1A, dIEC/dt = 200A/µs--50ns
IEC= 20A, dIEC/dt = 200A/µs--70ns

Thermal Resistance

R

θJC

IGBT - - 0.6

Junction To Case

Diode - - 1.25

NOTES:

3. Turn-Off Energy Loss (E

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

OFF

at the point where the collector current equals zero (ICE= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E

is the turn-on loss of the IGBT only. E

ON1

the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 19.

o

o

C/W
C/W

ON2

is

Typical Performance Curves

45
40
35
30
25
20
15
10

, DC COLLECTOR CURRENT (A)

5

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

(Unless Otherwise Specified)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

VGE= 15V

70

TJ= 150oC, RG = 3Ω, VGE= 15V, L = 100µH

60

50

40

30

20

10

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

600 800400200 1000 1200

1400

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

3