Intersil Corporation HGTG20N100D2 Datasheet
HGTG20N100D2
May 1995
Features
• 34A, 1000V
• Latch Free Operation
• Typical Fall Time 520ns
• High Input Impedance
• Low Conduction Loss
Description
The HGTG20N100D2 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately
between +25
IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and
drivers for solenoids, relays and contactors.
PART NUMBER PACKAGE BRAND
HGTG20N100D2 TO-247 G20N100D2
o
C and +150oC.
PACKAGING AVAILABILITY
20A, 1000V N-Channel IGBT
Package
JEDEC STYLE TO-247
COLLECTOR
(BOTTOM SIDE
METAL)
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
G
EMITTER
C
E
COLLECTOR
GATE
Absolute Maximum Ratings T
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Switching Safe Operating Area at TJ = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA 100A at 0.8 BV
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.20 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .TJ, T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
(0.125 inch from case for 5 seconds)
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . t
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE(PEAK)
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027
= 600V, TC = +125oC, RGE = 25Ω.
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
= +25oC, Unless Otherwise Specified
C
at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . t
CES
CGR
C25
C90
CM
GES
GEM
STG
SC
SC
HGTG20N100D2 UNITS
1000 V
1000 V
34 A
20 A
100 A
±20 V
±30 V
CES
D
L
150 W
-55 to +150
260
3 µs
15 µs
-
o
C
o
C
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
3-93
File Number 2826.3
Specifications HGTG20N100D2
Electrical Specifications T
= +25oC, Unless Otherwise Specified
C
PARAMETERS SYMBOL TEST CONDITIONS
Collector-Emitter Breakdown Voltage BV
Collector-Emitter Leakage Voltage I
Collector-Emitter Saturation Voltage V
Gate-Emitter Threshold Voltage V
Gate-Emitter Leakage Current I
Gate-Emitter Plateau Voltage V
On-State Gate Charge Q
Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-Off Energy (Note 1) W
Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off t
Current Fall Time t
Turn-Off Energy (Note 1) W
Thermal Resistance R
NOTE: 1. T urn-Off Energy Loss (W
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
OFF
ending at the point where the collector current equals zero (ICE = 0A) The HGTG20N100D2 was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total T urn-Of f Energy Loss.
CES
CES
CE(SAT)
GE(TH)
GES
GEP
G(ON)
D(ON)I
RI
D(OFF)I
FI
OFF
D(ON)I
RI
D(OFF)I
FI
OFF
θJC
LIMITS
UNITSMIN TYP MAX
IC = 250mA, VGE = 0V 1000 - - V
VCE = BV
CES
VCE = 0.8 BV
IC = I
,
C90
VGE = 15V
IC = I
,
C90
VGE = 10V
IC = 500µA,
VCE = V
GE
TC = +25oC - - 250 µA
CESTC
= +125oC - - 1.0 mA
TC = +25oC - 3.1 3.8 V
TC = +125oC - 2.9 3.6 V
TC = +25oC - 3.3 4.1 V
TC = +125oC - 3.2 4.0 V
TC= +25oC 3.0 4.5 6.0 V
VGE = ±20V - - ±250 nA
IC = I
, VCE = 0.5 BV
C90
IC = I
,
C90
VCE = 0.5 BV
L = 50µH, IC = I
VGE = 15V - 120 160 nC
CES
VGE = 20V - 163 212 nC
, RG = 25Ω,
C90
VGE = 15V, TJ = +125oC,
VCE = 0.8 BV
CES
CES
- 7.1 - V
- 100 - ns
- 150 - ns
- 500 650 ns
- 520 680 ns
- 3.7 - mJ
L = 50µH, IC = I
VGE = 10V, TJ = +125oC,
VCE = 0.8 BV
C90
CES
, RG = 25Ω,
- 100 - ns
- 150 - ns
- 410 530 ns
- 520 680 ns
- 3.7 - mJ
- 0.7 0.83
o
C/W
Typical Performance Curves
40
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V
30
20
10
, COLLECTOR-EMITTER CURRENT (A)
CE
I
0
0246810
, GATE-TO-EMITTER VOLTAGE (V)
V
GE
T
= +150oC
C
CE
= 10V
TC = +25oC
TC = -40oC
80
70
60
50
40
30
VGE = 6.0V
20
10
, COLLECTOR-EMITTER CURRENT (A)
CE
I
0
0246810
FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL) FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)
3-94
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, TC = +25oC
V
= 15V
GE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VGE = 8.5V
VGE = 8.0V
VGE = 7.5V
VGE = 7.0V
VGE = 6.5V
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