Intersil Corporation HGTG18N120BND Datasheet

HGTG18N120BND

Data Sheet January 2000 File Number 4555.1

54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG18N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49304.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG18N120BND TO-247 18N120BND

NOTE: When ordering, use the entire part number.

Symbol

Features

• 54A, 1200V, TC = 25oC

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T

• Short Circuit Rating

• Low Conduction Loss

Packaging

JEDEC STYLE TO-247

= 150oC

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

HGTG18N120BND

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Speciﬁed

HGTG18N120BND UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

1200 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

GES

GEM

54 A 26 A

160 A

±20 V ±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 100A at 1200V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

390 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

STG

L SC SC

-55 to 150 260

8 µs

15 µs

NOTES:

1. Pulse width limited by maximum junction temperature.

2. V

Electrical Speciﬁcations T

= 960V, TJ = 125oC, R

CE(PK)

3Ω.

G =

= 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV Emitter to Collector Breakdown Voltage BV Collector to Emitter Leakage Current I

CES ECS

CES

IC = 250µA, VGE = 0V 1200 - - V IC = 10mA, VGE= 0V 15 - - V VCE = BV

CES

TC = 25oC - - 250 µA TC = 125oC - 300 - µA TC = 150oC--4mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA TJ = 150oC, RG = 3Ω, VGE = 15V,

Gate to Emitter Plateau Voltage V On-State Gate Charge Q

Current Turn-On Delay Time t Current Rise Time t Current Turn-Off Delay Time t Current Fall Time t Turn-On Energy E Turn-Off Energy (Note 3) E

GEP

G(ON)

d(ON)I

d(OFF)I

OFF

= 18A,

VGE = 15V

IC = 150µA, VCE = V

TC = 25oC - 2.45 2.7 V TC = 150oC - 3.8 4.2 V

6.0 7.0 - V

VGE = ±20V - - ±250 nA

100 - - A

L = 200µH, V IC = 18A, VCE = 0.5 BV IC = 18A,

VCE = 0.5 BV

IGBT and Diode at TJ = 25oC ICE = 18A VCE = 0.8 BV VGE = 15V

CE(PK)

CES

= 1200V

CES

- 10.5 - V

VGE = 15V - 165 200 nC VGE = 20V - 220 250 nC

-2328ns

-1722ns

- 170 200 ns

RG= 3Ω L = 1mH Test Circuit (Figure 20)

- 90 140 ns

- 1.9 2.4 mJ

- 1.8 2.2 mJ

HGTG18N120BND

Electrical Speciﬁcations T

= 25oC, Unless Otherwise Speciﬁed (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t Turn-On Energy E Turn-Off Energy (Note 3) E Diode Forward Voltage V Diode Reverse Recovery Time t

OFF

IGBT and Diode at TJ = 150oC ICE = 18A VCE = 0.8 BV

CES

VGE = 15V

-2126ns

-1722ns

- 205 240 ns

RG= 3Ω L = 1mH Test Circuit (Figure 20)

- 140 200 ns

- 3.7 4.9 mJ

- 2.6 3.1 mJ

IEC = 18A - 2.6 3.2 V IEC = 18A, dIEC/dt = 200A/µs - 60 75 ns IEC = 2A, dIEC/dt = 200A/µs - 44 55 ns

Thermal Resistance Junction To Case R

θJC

IGBT - - 0.32 Diode - - 0.75

NOTE:

3. Turn-Off EnergyLoss (E

) is deﬁned asthe integral of the instantaneous power loss starting at the trailingedge of the inputpulse and ending

OFF

at the point where the collector current equals zero (ICE= 0A). All devices were tested per JEDEC Standard No.24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Typical Performance Curves Unless Otherwise Speciﬁed

o o

C/W C/W

, DC COLLECTOR CURRENT (A)

25 75 100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

= 15V

120

TJ= 150oC, RG = 3Ω, VGE= 15V, L = 200µH

100

, COLLECTOR TO EMITTER CURRENT (A)

, COLLECTOR TO EMITTER VOLTAGE (V)

600 800400200 1000 1200

1400

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

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