Intersil Corporation HGTG18N120BN Datasheet

HGTG18N120BN

January 2000 File Number 4518.3Data Sheet

54A, 1200V, NPT Series N-Channel IGBT

The HGTG18N120BN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49288.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG18N120BN TO-247 G18N120BN

NOTE: When ordering, use the entire part number.

Symbol

Features

• 54A, 1200V, TC = 25oC

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T

• Short Circuit Rating

• Low Conduction Loss

• Avalanche Rated

• Temperature Compensating SABER™ Model www.intersil.com

Packaging

JEDEC STYLE TO-247

= 150oC

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

SABER™ is a trademark of Analogy, Inc.

HGTG18N120BN

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Speciﬁed

HGTG18N120BN UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

1200 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

GES

GEM

54 A 26 A

160 A

±20 V ±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 100A at 1200V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

390 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12 W/oC

Forward Voltage Avalanche Energy (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

STG

L SC SC

125 mJ

-55 to 150 260

8 µs

15 µs

NOTES:

1. Pulse width limited by maximum junction temperature.

2. ICE = 25A, L = 400µH, TJ = 25oC.

3. V

= 960V, TJ = 125oC, RG = 3Ω.

CE(PK)

Electrical Speciﬁcations T

= 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV Emitter to Collector Breakdown Voltage BV Collector to Emitter Leakage Current I

CES ECS

CES

IC = 250µA, VGE = 0V 1200 - - V IC = 10mA, VGE= 0V 15 - - V VCE = BV

CES

TC = 25oC - - 250 µA TC = 125oC - 250 - µA TC = 150oC--3mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

= 18A,

VGE = 15V

IC = 150µA, VCE = V

TC = 25oC - 2.45 2.7 V TC = 150oC - 3.8 4.2 V

VGE = ±20V - - ±250 nA

Switching SOA SSOA TJ = 150oC, RG = 3Ω, VGE = 15V,

Gate to Emitter Plateau Voltage V On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t Turn-On Energy (Note 5) E Turn-On Energy (Note 5) E Turn-Off Energy (Note 4) E

GEP

G(ON)

fI ON1 ON2 OFF

L = 200µH, V IC = 18A, VCE = 0.5 BV IC = 18A,

VCE = 0.5 BV

IGBT and Diode at TJ = 25oC ICE = 18A VCE = 0.8 BV VGE = 15V RG= 3Ω L = 1mH Test Circuit (Figure 18)

CE(PK)

CES

= 1200V

CES

VGE = 15V - 165 200 nC VGE = 20V - 220 250 nC

6.0 7.0 - V

100 - - A

- 10.5 - V

-2328ns

-1722ns

- 170 200 ns

- 90 140 ns

- 0.8 1.0 mJ

- 1.9 2.4 mJ

- 1.8 2.2 mJ

HGTG18N120BN

Electrical Speciﬁcations T

= 25oC, Unless Otherwise Speciﬁed (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t Turn-On Energy (Note 5) E Turn-On Energy (Note 5) E Turn-Off Energy (Note 4) E Thermal Resistance Junction To Case R

fI ON1 ON2 OFF

θJC

IGBT and Diode at TJ = 150oC ICE = 18A VCE = 0.8 BV

CES

VGE = 15V RG= 3Ω L = 1mH Test Circuit (Figure 18)

-2126ns

-1722ns

- 205 240 ns

- 140 200 ns

- 0.85 1.1 mJ

- 3.7 4.9 mJ

- 2.6 3.1 mJ

- - 0.32

NOTES:

4. Turn-Off Energy Loss (E

) is deﬁned as the integral of the instantaneous power loss starting at the trailing edge of theinput pulse and ending

OFF

at the point where the collector current equals zero (ICE= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

5. Values for two Turn-On loss conditions are shown for the convenienceof the circuit designer.E

is the turn-on loss of the IGBT only. E

ON1

the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJas the IGBT.The diode type is speciﬁed in Fig. 18.

Typical Performance Curves Unless Otherwise Speciﬁed

= 15V

120

TJ= 150oC, RG = 3Ω, VGE= 15V, L = 200µH

100

C/W

ON2

, DC COLLECTOR CURRENT (A)

25 75 100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

TJ= 150oC, RG = 3Ω, L = 1mH,

100

= 0.05 / (t

MAX1

= (PD- PC) / (E

MAX2

, OPERATING FREQUENCY (kHz) f

= CONDUCTION DISSIPATION

MAX

(DUTY FACTOR = 50%)

= 0.32oC/W, SEE NOTES

ØJC

ICE, COLLECTOR TO EMITTER CURRENT (A)

TC = 75oC, VGE = 15V, IDEAL DIODE

+ t

d(OFF)I

d(ON)I

+ E

ON2

OFF

)

110 110oC

= 960V

75oC

15V 12V

15V

12V

, COLLECTOR TO EMITTER CURRENT (A)

, COLLECTOR TO EMITTER VOLTAGE (V)

600 800400200 1000 1200

1400

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

, SHORT CIRCUIT WITHSTAND TIME (µs)

4020

VCE = 960V, RG= 3Ω, TJ= 125oC

12 13 14 15 16

VGE, GATE TO EMITTER VOLTAGE (V)

300

250

200

150

100

, PEAK SHORT CIRCUIT CURRENT (A)

FIGURE 3. OPERATINGFREQUENCY vs COLLECTORTO

EMITTER CURRENT

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

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