Intersil Corporation HGTG15N120C3D Datasheet

May 1997

HGTG15N120C3D

35A, 1200V, UFS Series N-Channel IGBT

with Anti-Parallel Hyperfast Diode

Features

• 35A, 1200V at TC = 25oC

• 1200V Switching SOA Capability

• Typical Fall Time at T

• Short Circuit Rating

• Low Conduction Loss

= 150oC . . . . . . . . . . . . . .350ns

J

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG15N120C3D TO-247 15N120C3D

NOTE: When ordering, use the entire part number.

Formerly Developmental Type TA49133.

Description

The HGTG15N120C3D is a MOS gated high voltage switch­ing device combining the best features of MOSFETs and
bipolar transistors. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The much lower on-state voltage drop var­ies only moderately between 25

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

The diode used in anti-Parallel with the IGBT is the same as
the RHRP15120. The IGBT was formerly development type
TA49145.

o

C and 150oC.

Symbol

C

G

E

Packaging

JEDEC STYLE TO-247

E

C

G

COLLECTOR
(FLANGE)

INTERSIL CORPRATION’s IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

1

File Number 4267.1

HGTG15N120C3D

Absolute Maximum Ratings T

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

= 25oC, Unless Otherwise Specified

C

CES

HGTG15N120C3D UNITS

1200 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

C25

C110

CM

GES

GEM

35 A
15 A

120 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC, Figure 14 . . . . . . . . . . . . . . . . . . . .SSOA 15A at 1200V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.32 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . t

Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . t

STG

L
SC
SC

164 W

-55 to 150
260

6 µs

25 µs

o

C

o

C

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. V

Electrical Specifications T

= 360V, TJ = 125oC, RGE = 25Ω.

CE(PK)

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CESIC

CES

CE(SAT)IC

GE(TH)IC

GES

Switching SOA SSOA TJ = 150oC

= 250µA, VGE = 0V 1200 - - V
VCE = BV
VCE = BV

= I

C110

CES
CES

,

VGE = 15V

= 250µA, VCE = V

TC = 25oC - - 250 µA
TC = 150oC - - 3.0 mA
TC = 25oC - 2.3 3.5 V
TC = 150oC - 2.4 3.2 V

GE

4.0 5.6 7.5 V

VGE = ±20V - - ±100 nA

RG = 10Ω
VGE = 15V

V
V

= 960V 40 - - A

CE(PK)

= 1200V 15 - - A

CE(PK)

L = 1mH

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 3) E
Turn-Off Energy (Note 3) E
Diode Forward Voltage V
Diode Reverse Recovery Time t

GEP

g(ON)IC

rI

fI

ON

OFF

EC

rr

IC = I

VCE = 0.5 BV
TJ = 150oC,

ICE = I
V

CE(PK)

VGE = 15V,
RG = 10Ω,
L = 1mH

= I

C110
C110

C110,

, VCE = 0.5 BV
,

CES

= 0.8 BV

CES,

CES

- 8.8 - V
VGE = 15V - 75 100 nC
VGE = 20V - 100 130 nC

-17-ns

-25-ns

- 470 550 ns

- 350 400 ns

- 2100 - µJ

- 4700 - µJ

IEC= 15A - - 3.2 V
IEC= 1A, dIEC/dt = 200A/µs--65ns
IEC= 15A, dIEC/dt = 200A/µs--75ns

Thermal Resistance R

θJC

IGBT - - 0.76
Diode - - 1.5

o
o

C/W
C/W

NOTE:

3. Turn-OffEnergy Loss (E

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and

OFF

ending at the point where the collector current equals zero (ICE= 0A). The HGTG15N120C3D was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn­On Energy loss (EON) includes losses due to the diode recovery.

2

HGTG15N120C3D

Typical Performance Curves

100

DUTY CYCLE <0.5%, VCE = 10V
PULSE DURATION = 250µs

80

60

40

20

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

VGE, GATE TO EMITTER VOLTAGE (V)

FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS

25

PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V

20

TC = 25oC

TC = -55oC

10 146

= 10V

GE

Unless Otherwise Specified

TC = 150oC

TC = 25oC

128

80

DUTY CYCLE <0.5%, TC = 25oC
PULSE DURATION = 250µs

60

40

20

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

100

80

0

0

268

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V

VGE = 15V

12V
10V

9V

8.5V
8V

4

= 15V

GE

TC = 25oC

10

15

TC = 150oC

10

5

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

0610

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

428

60

40

20

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

02 68

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

4

TC = 150oC

FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE

10

3