Intersil Corporation HGTG12N60D1D Datasheet
April 1995
HGTG12N60D1D
12A, 600V N-Channel IGBT
with Anti-Parallel Ultrafast Diode
Features
• 12A, 600V
• Latch Free Operation
• Typical Fall Time <500ns
• Low Conduction Loss
• With Anti-Parallel Diode
< 60ns
•t
RR
Description
The IGBT is a MOS gated high voltage switching device
combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between +25
parallel with the IGBT is an ultrafast (t
recovery characteristic.
The IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contactors.
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
HGTG12N60D1D TO-220AB G12N60D1D
NOTE: When ordering, use the entire part number
o
C and +150oC. The diode used in
< 60ns) with soft
RR
Package
JEDEC STYLE TO-247
COLLECTOR
(BOTTOM SIDE
METAL)
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
G
EMITTER
COLLECTOR
GATE
C
E
Absolute Maximum Ratings T
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Switching Safe Operating Area at TJ = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA 30A at 0.8 BV
Diode Forward Current at TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
at TC = +90oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
(0.125 inches from case for 5s)
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
= +25oC, Unless Otherwise Specified
C
3-46
CES
CGR
C25
C90
CM
GES
F25
F90
STG
HGTG12N60D1D UNITS
600 V
600 V
21 A
12 A
48 A
±20 V
CES
21 A
12 A
D
L
75 W
-55 to +150
260
File Number 2800.4
-
o
C
o
C
Specifications HGTG12N60D1D
Electrical Specifications T
= +25oC, Unless Otherwise Specified
C
LIMITS
PARAMETERS SYMBOL TEST CONDITIONS
Collector-Emitter Breakdown Voltage BV
Collector-Emitter Leakage Voltage I
Collector-Emitter Saturation Voltage V
CE(SAT)
CES
CES
IC = 280µA, VGE = 0V 600 - - V
VCE = BV
VCE = 0.8 BV
IC = I
CES
CES
, VGE = 15V TC = +25oC - 1.9 2.5 V
C90
TC = +25oC - - 280 µA
TC = +125oC - - 5.0 mA
TC = +125oC - 2.1 2.7 V
Gate-Emitter Threshold Voltage V
Gate-Emitter Leakage Current I
Gate-Emitter Plateau Voltage V
On-State Gate Charge Q
Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off t
D(OFF)I
Current Fall Time t
Turn-Off Energy (Note 1) W
Thermal Resistance IGBT R
Thermal Resistance Diode R
Diode Forward Voltage V
Diode Reverse Recovery Time t
GE(TH)
GES
GEP
G(ON)
D(ON)I
RI
FI
OFF
θJC
θJC
EC
RR
IC = 250µA, VCE = VGE, TC= +25oC 3.0 4.5 6.0 V
VGE = ±20V - - ±500 nA
IC = I
, VCE = 0.5 BV
C90
IC = I
,
C90
VCE = 0.5 BV
L = 500µH, IC = I
CES
, RG = 25V,
C90
VGE = 15V, TJ = +150oC,
VCE = 0.8 BV
CES
CES
VGE = 15V - 45 60 nC
VGE = 20V - 70 90 nC
- 7.2 - V
- 100 - ns
- 150 - ns
- 430 600 ns
- 430 600 ns
- 1.8 - mJ
- - 1.67
- - 1.5
IEC = 12A - - 1.50 V
IEC = 12A, dIEC/dt = 100A/µs--60ns
NOTE:
1. Turn-off Energy Loss (W
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
OFF
ending at the point where the collector current equals zero (ICE = 0A). The HGTG12N60D1D was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-off Switching Loss. This test method produces the true total Turn-off Energy Loss.
UNITSMIN TYP MAX
o
C/W
o
C/W
Typical Performance Curves
20
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%
V
= 10V
CE
16
12
8
TC = +150oC
T
= +25oC
4
, COLLECTOR-EMITTER CURRENT (A)
CE
I
0
0246810
C
T
= -40oC
C
V
, GATE-EMITTER VOLTAGE (V)
GE
FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL) FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)
3-47
20
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%
= +25oC
T
C
15
VGE = 15V
10
5
, COLLECTOR-EMITTER CURRENT (A)
CE
I
0
012345
V
, COLLECTOR-EMITTER VOLTAGE (V)
CE
VGE = 5.7V
VGE = 10V
VGE = 7.5V
VGE = 7.0V
VGE = 6.5V
VGE = 6.0V
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