Intersil Corporation HGTP12N60A4D, HGTG12N60A4D, HGT1S12N60A4DS Datasheet

HGTG12N60A4D, HGTP12N60A4D,

HGT1S12N60A4DS

Data Sheet November 1999

600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode

The HGTG12N60A4D, HGTP12N60A4D and
HGT1S12N60A4DS are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25

o

C and 150oC. The
IGBT used is the development type TA49335. The diode
used in anti-parallel is the development type TA49371.

This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49337.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG12N60A4D TO-247 12N60A4D
HGTP12N60A4D TO-220AB 12N60A4D
HGT1S12N60A4DS TO-263AB 12N60A4D

NOTE: Whenordering,usethe entirepartnumber. Add thesuffix9A
to obtain the TO-263AB variant in tape and reel, e.g.
HGT1S12N60A4DS9A.

Symbol

C

File Number 4697.3

Features

• >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A

• 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T

= 125oC

J

• Low Conduction Loss

• Temperature Compensating SABER™ Model
www.intersil.com

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards

Packaging

JEDEC TO-220AB ALTERNATE VERSION

E

C

COLLECTOR

(FLANGE)

G

E

JEDEC TO-263AB

COLLECTOR

(FLANGE)

G

JEDEC STYLE TO-247

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

2-1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

SABER™ is a trademark of Analogy, Inc.

1-888-INTERSIL or 407-727-9207

| Copyright © Intersil Corporation 1999

E

C

G

COLLECTOR

(FLANGE)

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTG12N60A4D,
HGTP12N60A4D,

HGT1S12N60A4DS UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

600 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

C25

C110

CM

GES

GEM

54 A
23 A
96 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA 60A at 600V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

167 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

-55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300

260

o

C

o

C

o

C

NOTE:

1. Pulse width limited by maximum junction temperature.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Collector to Emitter Leakage Current I

CES

CES

IC = 250µA, VGE = 0V 600 - - V
VCE = 600V TJ = 25oC - - 250 µA

TJ = 125oC - - 2.0 mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA TJ = 150oC, RG = 10Ω, VGE = 15V,

= 12A,

VGE = 15V

TJ = 25oC - 2.0 2.7 V

TJ = 125oC - 1.6 2.0 V
IC = 250µA, VCE = 600V - 5.6 - V
VGE = ±20V - - ±250 nA

60 - - A

L = 100µH, VCE = 600V

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 3) E
Turn-On Energy (Note 3) E
Turn-Off Energy (Note 2) E
Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note3) E
Turn-On Energy (Note 3) E
Turn-Off Energy (Note 2) E

GEP

g(ON)

rI

fI
ON1
ON2
OFF

rI

fI
ON1
ON2
OFF

IC = 12A, VCE = 300V - 8 - V
IC = 12A,

VCE = 300V
IGBT and Diode at TJ = 25oC,

ICE = 12A,
VCE = 390V,
VGE = 15V,
RG = 10Ω,
L = 500µH,
Test Circuit (Figure 24)

VGE = 15V - 78 96 nC
VGE = 20V - 97 120 nC

-17- ns

-8-ns

-96- ns

-18- ns

-55- µJ

- 160 - µJ

-50- µJ

IGBT and Diode at TJ = 125oC,
ICE = 12A,
VCE = 390V, VGE = 15V,
RG= 10Ω,
L = 500µH,
Test Circuit (Figure 24)

-17- ns

-16- ns

- 110 170 ns

-7095ns

-55- µJ

- 250 350 µJ

- 175 285 µJ

2-2

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Diode Forward Voltage V
Diode Reverse Recovery Time t

EC

rr

IEC = 12A - 2.2 - V
IEC = 12A, dIEC/dt = 200A/µs - 30 - ns
IEC = 1A, dIEC/dt = 200A/µs - 18 - ns

Thermal Resistance Junction To Case R

θJC

IGBT - - 0.75
Diode - - 2.0

NOTES:

2. Turn-Off Energy Loss(E

) isdefinedas the integral of theinstantaneouspower loss starting atthetrailing edge of the inputpulseand ending

OFF

at the pointwherethecollector current equals zero (ICE= 0A). Alldevicesweretested per JEDEC Standard No. 24-1 MethodforMeasurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

3. Values fortwoTurn-On loss conditionsareshown for the convenienceofthe circuit designer.E

is theturn-onloss of theIGBTonly. E

ON1

is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJas the IGBT. The diode type is specified in
Figure 24.

Typical Performance Curves Unless Otherwise Specified

60

50

40

30

20

VGE= 15V,

70

TJ= 150oC, RG = 10Ω, VGE= 15V, L = 200µH

60

50

40

30

20

o
o

C/W
C/W

ON2

, DC COLLECTOR CURRENT (A)

10

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTORCURRENTvs CASE

TEMPERATURE

500

T

300

100

f

= 0.05 / (t

MAX1

f

= (PD- PC) / (E

MAX2

= CONDUCTION DISSIPATION

P

C

(DUTY FACTOR = 50%)

R

= 0.75oC/W, SEE NOTES

ØJC

, OPERATING FREQUENCY (kHz)

TJ= 125oC, RG = 10Ω, L = 500µH, VCE= 390V

MAX

f

10

1

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

d(OFF)I

3

+ t

ON2

d(ON)I

+ E

OFF

)

)

75

C

o

C

FIGURE 3. OPERATINGFREQUENCY vs COLLECTORTO

EMITTER CURRENT

V

GE

15V

10

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

300 400200100 500 600

700

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

20

VCE = 390V, RG = 10Ω, TJ= 125oC

18
16
14
12
10

8
6
4
2

, SHORT CIRCUIT WITHSTAND TIME (µs)

0

SC

t

3010 20

9 101112 15

VGE, GATE TO EMITTER VOLTAGE (V)

I

SC

t

SC

13 14

300
275
250
225
200
175
150
125
100
75

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

50

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

2-3