Intersil Corporation HGTG11N120CND Datasheet

HGTG11N120CND

Data Sheet January 2000

43A, 1200V, NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode

The HGTG11N120CND is a Non-Punch Through (NPT)
IGBT design. This is a new member of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The IGBT
used is the development type TA49291. The Diode used is
the development type TA49189.

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

Formerly Developmental Type TA49303.

Ordering Information

PART NUMBER PACKAGE BRAND

File Number 4580.2

Features

• 43A, 1200V, TC = 25oC

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 340ns at T

• Short Circuit Rating

• Low Conduction Loss

• Thermal Impedance SPICE Model
www.intersil.com

Packaging

JEDEC STYLE TO-247

E

C

G

= 150oC

J

HGTG11N120CND TO-247 11N120CND

NOTE: When ordering, use the entire part number.

Symbol

C

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 2000

HGTG11N120CND

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTG11N120CND UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

1200 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

CM

GES

GEM

43 A
22 A
80 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 55A at 1200V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

298 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.38 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

STG

L
SC
SC

-55 to 150
260

8 µs

15 µs

o

C

o

C

NOTES:

1. Pulse width limited by maximum junction temperature.

2. V

= 840V, TJ = 125oC, RG = 10Ω.

CE(PK)

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Collector to Emitter Leakage Current I

CES

CES

IC = 250µA, VGE = 0V 1200 - - V
VCE = BV

CES

TC = 25oC - - 250 µA
TC = 125oC - 300 - µA
TC = 150oC - - 3.5 mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

= 11A,

VGE = 15V

IC = 90µA, VCE = V

TC = 25oC - 2.1 2.4 V
TC = 150oC - 2.9 3.5 V

GE

VGE = ±20V - - ±250 nA

Switching SOA SSOA TJ = 150oC, RG = 10Ω, VGE = 15V,

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E

GEP

G(ON)

rI

fI

ON

OFF

L = 400µH, V
IC = 11A, VCE = 0.5 BV
IC = 11A,

VCE = 0.5 BV

IGBT and Diode at TJ = 25oC,
ICE = 11A,
VCE = 0.8 BV
VGE = 15V,
RG= 10Ω,
L = 2mH,
Test Circuit (Figure 20)

CE(PK)

CES

CES

= 1200V

CES

VGE = 15V - 100 120 nC
VGE = 20V - 130 150 nC

,

6.0 6.8 - V

55 - - A

- 10.4 - V

-2326ns

-1216ns

- 180 240 ns

- 190 220 ns

- 0.95 1.3 mJ

- 1.3 1.6 mJ

2

HGTG11N120CND

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Diode Forward Voltage V
Diode Reverse Recovery Time t

rI

fI

ON

OFF

EC

rr

IGBT and Diode at TJ = 150oC,
ICE = 11A,
VCE = 0.8 BV

CES

,

VGE = 15V,

-2124ns

-1216ns

- 210 280 ns

RG= 10Ω,
L = 2mH,
Test Circuit (Figure 20)

- 360 400 ns

- 1.9 2.5 mJ

- 2.1 2.5 mJ

IEC = 11A - 2.6 3.2 V
IEC = 11A, dlEC/dt = 200A/µs - 60 70 ns
IEC = 1A, dlEC/dt = 200A/µs - 32 40 ns

Thermal Resistance Junction To Case R

θJC

IGBT - - 0.42
Diode - - 1.25

NOTE:

3. Turn-OffEnergy Loss (E

) is defined as the integral of the instantaneouspower loss starting at the trailing edge of theinput pulse and ending

OFF

at the point where the collector current equals zero (ICE= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Typical Performance Curves Unless Otherwise Specified

o
o

C/W
C/W

45
40
35
30
25
20
15
10

, DC COLLECTOR CURRENT (A)

5

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

V

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

GE

= 15V

60

50

TJ= 150oC, RG = 10Ω, VGE= 15V, L = 400µH

40

30

20

10

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

600 800400200 1000 1200

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

1400

3