Intersil Corporation HGTP10N120BN, HGTG10N120BN, HGT1S10N120BNS Datasheet
HGTG10N120BN, HGTP10N120BN,
HGT1S10N120BNS
Data Sheet January 2000 File Number 4575.2
35A, 1200V, NPT Series N-Channel IGBT
The HGTG10N120BN, HGTP10N120BN and
HGT1S10N120BNS are Non-Punch Through (NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49290.
Ordering Information
PART NUMBER PACKAGE BRAND
HGTG10N120BN TO-247 G10N120BN
HGTP10N120BN TO-220AB 10N120BN
HGT1S10N120BNS T0-263AB 10N120BN
NOTE: When ordering,use theentirepart number. Addthe suffix 9A
to obtain the TO-263AB variant in tape and reel, e.g.
HGT1S10N120BNS9A.
Features
• 35A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.intersil.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging
JEDEC STYLE TO-247
E
COLLECTOR
(FLANGE)
C
= 150oC
J
G
Symbol
C
JEDEC TO-220AB (ALTERNATE VERSION)
G
COLLECTOR
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
(FLANGE)
G
E
JEDEC TO-263AB
COLLECTOR
(FLANGE)
E
C
G
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
| Copyright © Intersil Corporation 2000
SABER™ is a trademark of Analogy, Inc.
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
HGTG10N120BN
HGTP10N120BN
HGT1S10N120BNS UNITS
Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
1200 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
C25
C110
CM
GES
GEM
35 A
17 A
80 A
±20 V
±30 V
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 55A at 1200V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
298 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.38 W/oC
Forward Voltage Avalanche Energy (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
AV
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
SC
SC
80 mJ
-55 to 150
300
260
8 µs
15 µs
o
C
o
C
o
C
NOTES:
1. Pulse width limited by maximum junction temperature.
2. ICE = 20A, L = 400µH, TJ = 25oC.
3. V
= 840V, TJ = 125oC, RG= 10Ω.
CE(PK)
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I
CES
ECS
CES
IC = 250µA, VGE = 0V 1200 - - V
IC = 10mA, VGE= 0V 15 - - V
VCE = BV
CES
TC = 25oC - - 250 µA
TC = 125oC - 150 - µA
TC = 150oC--2mA
Collector to Emitter Saturation Voltage V
CE(SAT)IC
= 10A,
TC = 25oC - 2.45 2.7 V
VGE = 15V
TC = 150oC - 3.7 4.2 V
Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I
GE(TH)
GES
IC = 90µA, VCE = V
GE
VGE = ±20V - - ±250 nA
Switching SOA SSOA TJ = 150oC, RG = 10Ω, VGE = 15V,
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q
GEP
G(ON)
L = 400µH, V
IC = 10A, VCE = 0.5 BV
IC = 10A,
VCE = 0.5 BV
CE(PK)
CES
= 1200V
CES
VGE = 15V - 100 120 nC
VGE = 20V - 130 150 nC
6.0 6.8 - V
55 - - A
- 10.4 - V
2
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
Electrical Specifications T
= 25oC, Unless Otherwise Specified (Continued)
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Current Turn-On Delay Time t
d(ON)I
IGBT and Diode at TJ = 25oC
-2326ns
ICE = 10A
Current Rise Time t
Current Turn-Off Delay Time t
d(OFF)I
Current Fall Time t
Turn-On Energy (Note 5) E
Turn-On Energy (Note 5) E
Turn-Off Energy (Note 4) E
Current Turn-On Delay Time t
d(ON)I
rI
fI
ON1
ON2
OFF
VCE = 0.8 BV
CES
VGE = 15V
RG= 10Ω
L = 2mH
Test Circuit (Figure 18)
IGBT and Diode at TJ = 150oC
-1115ns
- 165 210 ns
- 100 140 ns
- 0.32 0.4 mJ
- 0.85 1.1 mJ
- 0.8 1.0 mJ
-2125ns
ICE = 10A
Current Rise Time t
Current Turn-Off Delay Time t
d(OFF)I
Current Fall Time t
Turn-On Energy (Note 5) E
Turn-On Energy (Note 5) E
Turn-Off Energy (Note 4) E
Thermal Resistance Junction To Case R
rI
fI
ON1
ON2
OFF
θJC
VCE = 0.8 BV
CES
VGE = 15V
RG= 10Ω
L = 2mH
Test Circuit (Figure 18)
-1115ns
- 190 250 ns
- 140 200 ns
- 0.4 0.5 mJ
- 1.75 2.3 mJ
- 1.1 1.4 mJ
- - 0.42
NOTES:
4. Turn-OffEnergy Loss (E
) is defined as the integral of the instantaneous powerloss starting atthe trailing edgeof the inputpulse and ending
OFF
at the point where the collector current equals zero (ICE= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss of the IGBT only. E
ON1
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 18.
o
C/W
ON2
Typical Performance Curves Unless Otherwise Specified
35
30
25
20
15
10
, DC COLLECTOR CURRENT (A)
5
CE
I
0
25 75 100 125 150
50
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
3
V
= 15V
GE
60
50
TJ= 150oC, RG = 10Ω, VGE= 15V, L = 400µH
40
30
20
10
, COLLECTOR TO EMITTER CURRENT (A)
0
CE
I
0
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
600 800400200 1000 1200
1400
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
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