Intersil Corporation HGTD8P50G1S, HGTD8P50G1 Datasheet

HGTD8P50G1,

HGTD8P50G1S

March 1997

Features

• 8A, 500V

• 3.7V V

CE(SAT)

• Typical Fall Time - 1800ns

• High Input Impedance
= +150oC

•T

J

Description

The HGTD8P50G1 and the HGTD8P50G1S are P-channel
enhancement-mode insulated gate bipolar transistors (IGBTs)
designed for high voltage, low on-dissipation applications such
as switching regulators and motor drives. This P- channel IGBT
can be paired with N-Channel IGBTs to form a complementary
power switch and it is ideal for half bridge circuit configurations.
These types can be operated directly from low power integrated
circuits.

PACKAGING AVAILABILITY

PART NUMBER PACKAGE BRAND

HGTD8P50G1 TO-251AA G8P50G
HGTD8P50G1S TO-252AA G8P50G

NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in the tape and reel, i.e.,
HGTD8P50G1S9A.

The development type number for these devices is TA49015.

Package

Symbol

8A, 500V P-Channel IGBTs

JEDEC TO-251AA

EMITTER

COLLECTOR

GATE

(FLANGE)

COLLECTOR

JEDEC TO-252AA

(FLANGE)

GATE
EMITTER

G

COLLECTOR

C

E

Absolute Maximum Ratings T

Collector-Emitter Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

Emitter-Collector Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

Collector Current Continuous

At TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At TC = +90oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Switching SOA at TC = +25oC, VCL = -350V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA

No Snubber, Figure 17 - Circuit 1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

With 0.1µF Capacitor, Figure 17 - Circuit 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.53 W/oC

Operating and Storage Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

(0.125" from case for 5s)
NOTE:

1. TJ = 25oC, VCL = 350V, RGE = 25Ω, Figure 17 - Circuit 2 (C1 = 0.1µF)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

= +25oC, Unless Otherwise Specified

C

1

CES
ECS

C25
C90

CM

GES

GEM

STG

HGTD8P50G1/G1S UNITS

-500 V
10 V

-12

-8

-18 A

±20 V
±30 V

-3

-18

D

L

66 W

-40 to +150
+260

File Number 3649.3

A
A

A
A

o

C

o

C

Specifications HGTD8P50G1, HGTD8P50G1S

Electrical Specifications T

= +25oC, Unless Otherwise Specified

C

PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

Collector-Emitter Breakdown Voltage BV

Emitter-Collector Breakdown Voltage BV

Collector-Emitter Leakage Current I

Collector-Emitter Saturation Voltage V

Gate-Emitter Threshold Voltage V

Gate-Emitter Leakage Current I

Gate-Emitter Plateau Voltage V

On-State Gate Charge Q

CES

ICE = -250µA
VCL = -600V

ECS

CES

IEC= 1mA VGE= 0V 10 - - V

VCE = BV

VCE = 0.8 BV

CE(SAT)ICE

VGE = -15V

ICE = I
VGE = -15V

GE(TH)ICE

GES

GE(PL)IC

G(ON)IC

VGE = ±20V - - ±100 nA

VCE = 0.5 BV

VGE = 0V -500 - - V

CES

CES

= -3.0A

TC = +25oC - - -250 µA

TC = +150oC - - -1.0 mA

TC = +25oC - -2.5 -2.9 V

TC = +150oC - -2.3 -2.8 V

C90

TC = +25oC - -3.0 -3.7 V

TC = +150oC - -3.3 -4.0 V

= -1.0mA VCE = V

GE

= 3A VCE = 0.5 BV

= 3A,

CES

VGE = -15V - 16 25 nC

VGE = -20V - 22 30 nC

CES

-4.5 -6.0 -7.5 V

- -7.0 - V

Current Turn-On Delay Time t

D(ON)I

RL = 113Ω ICE = -3A,

-45-ns

VGE = -15V

Current Rise Time t

RI

VCE = -350V

-85-ns

RG = 25Ω

Current Turn-off Delay Time t

D(OFF)I

L = 100µH - 480 680 ns

TJ = +150oC
Fig. 17, Circuit 1

Current Fall Time t

Turn-Off Energy (Note 1) E

Current Turn-Off Delay Time t

D(OFF)I

FI

OFF

L = 100µHI

CE

= -8A,

- 1800 2500 ns

- 0.8 - mJ

- 100 200 ns

VGE = -15V

Current Fall Time t

FI

VCE = -350V

- 3500 4000 ns

RG = 25Ω

Turn-Off Energy (Note 1) E

OFF

TJ = +150oC

- 1.3 - mJ
Fig. 17, Circuit 2
C1 = .022µF

Latching Current I

L

L = 100µHV

GE

= -15V

-3 - - A

RG = 25Ω

T

= +25oC

J

VCE = -350V
Fig. 17, Circuit 1

Thermal Resistance R

θJC

- 1.75 1.90oC/W

NOTE:

1. T urn-Off Energy Loss (E

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and

OFF

ending at the point where the collector current equals zero (ICE = 0A). The HGTD8P50G1 and HGTD8P50G1S were tested per JEDEC
standard No. 24-1 Method for Measurement of Power Device Tur n-Off Switching Loss. This test method produces the true total Turn-Off
Energy Loss. Turn-On losses include diode losses.

2

Typical Performance Curves

HGTD8P50G1, HGTD8P50G1S

PULSE DURATION = 250µs, DUTY CYCLE < 0.5%, VCE = -10V

-20

-16
TC = -40oC

-12

= +25oC

T

C

TC = +150oC

-8

-4

, COLLECTOR-EMITTER CURRENT (A)

0

CE

I

-4

-6

V

GE

-8 -10

, GATE-TO-EMITTER VOLTAGE (V)

-12

-14

-20

-16

-12

-8

-4

, COLLECTOR-EMITTER CURRENT (A)

CE

0

I

0

PULSE DURATION = 250µs, DUTY CYCLE < 0.5%

VGE = -15V

-2
V

CE

-4 -6

, COLLECTOR-EMITTER VOLTAGE (V)

-12V

FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS

-14

-12

-10

-8

-6

-4

-2

, DC COLLECTOR CURRENT (A)

CE

I

0

25 50 75

TC, CASE TEMPERATURE (oC)

VGE = -15V

100 125 150

PULSE DURATION = 250µs, DUTY CYCLE < 0.5%, VGE = -15V

-20

-16
TC = -40oC

-12

TC = +150oC

-8

-4

, COLLECTOR-EMITTER CURRENT (A)

0

CE

0-1

I

V

, COLLECTOR-EMITTER VOLTAGE (V)

CE

-3 -4 -5 -6 -7

-2

-10V

-9.0V

-8.0V

-7.0V

-6.5V

-8

TC = +25oC

-10

FIGURE 3. MAXIMUM DC COLLECTOR CURRENT AS A

FUNCTION OF CASE TEMPERATURE

FREQUENCY = 1MHz

700

600

C

IES

500

400

300

C, CAPACITANCE (pF)

200

C

OES

100

C

RES

0

0

-5

-10

-15

-20

-25

VCE, COLLECTOR-EMITTER VOLTAGE (V)

FIGURE 5. CAPACITANCE AS A FUNCTION OF COLLECTOR-

EMITTER VOLTAGE

FIGURE 4. COLLECTOR-EMITTER SATURATION VOLTAGE

-400

-200

COLLECTOR-EMITTER VOLTAGE (V)

CE,

V

0

VCE = -400V

I

G(REF)

20

I

G(ACT)

= +25oC, VGE = -15V, I

T

J

GATE-EMITTER VOLTAGE

VCE = -100V

COLLECTOR-EMITTER VOLTAGE

TIME (µs)

= -0.391mA

G(REF)

VCE = -400V

80

I

G(REF)

I

G(ACT)

-15

-7.5

0

FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT

CONSTANT GATE CURRENT. (REFER TO
APPLICATION NOTES AN7254 AND AN7260)

, GATE-EMITTER VOLTAGE (V)

GE

V

3