Intersil Corporation HGTD7N60C3S Datasheet
HGTD7N60C3S, HGTP7N60C3
Data Sheet January 2000
14A, 600V, UFS Series N-Channel IGBTs
The HGTD7N60C3S and HGTP7N60C3 are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have
the high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25
and 150
o
C.
o
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49115.
Ordering Information
PART NUMBER PACKAGE BRAND
HGTD7N60C3S TO-252AA G7N60C
HGTP7N60C3 TO-220AB G7N60C3
File Number 4141.3
Features
• 14A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T
C
• Short Circuit Rating
= 150oC
J
• Low Conduction Loss
Packaging
JEDEC TO-220AB
EMITTER
JEDEC TO-252AA
COLLECTOR
GATE
COLLECTOR (FLANGE)
NOTE: When ordering, usethe entire partnumber. Addthesuffix 9A
to obtain the TO-252AA variant in tape and reel, i.e.
HGTD7N60C3S9A.
GATE
EMITTER
COLLECTOR
(FLANGE)
Symbol
C
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
| Copyright © Intersil Corporation 2000
HGTD7N60C3S, HGTP7N60C3
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
HGTD7N60C3S HGTP7N60C3 UNITS
Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
600 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
C25
C110
CM
GES
GEM
14 A
7A
56 A
±20 V
±30 V
Switching Safe Operating Area at TJ = 150oC, Figure 14 . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA 40A at 480V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
60 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.48 W/oC
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
ARV
STG
L
SC
SC
100 mJ
-40 to 150
260
1 µs
8 µs
o
C
o
C
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
Electrical Specifications T
= 360V, TJ = 125oC, RG= 50Ω.
CE(PK)
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I
CES
ECS
CES
IC = 250µA, VGE = 0V 600 - - V
IC = 3mA, VGE= 0V 16 30 - V
VCE = BV
VCE = BV
Collector to Emitter Saturation Voltage V
CE(SAT)IC
= I
C110
VGE = 15V
Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I
GE(TH)
GES
IC = 250µA,
VCE = V
GE
VGE = ±25V - - ±250 nA
Switching SOA SSOA TJ = 150oC
RG = 50Ω
VGE = 15V
L = 1mH
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q
GEP
G(ON)
IC = I
IC = I
C110
C110
VCE = 0.5 BV
CES
CES
,
TC = 25oC - - 250 µA
TC = 150oC - - 2.0 mA
TC = 25oC - 1.6 2.0 V
TC = 150oC - 1.9 2.4 V
TC = 25oC 3.0 5.0 6.0 V
V
V
, VCE = 0.5 BV
,
VGE = 15V - 23 30 nC
CES
VGE = 20V - 30 38 nC
= 480V 40 - - A
CE(PK)
= 600V 6 - - A
CE(PK)
CES
-8-V
2
HGTD7N60C3S, HGTP7N60C3
Electrical Specifications T
= 25oC, Unless Otherwise Specified (Continued)
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Current Turn-On Delay Time t
d(ON)I
Current Rise Time t
Current Turn-Off Delay Time t
d(OFF)I
Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Thermal Resistance R
rI
fI
ON
OFF
θJC
TJ = 150oC
ICE = I
C110
V
= 0.8 BV
CE(PK)
VGE = 15V
RG= 50Ω
L = 1.0mH
CES
- 8.5 - ns
- 11.5 - ns
- 350 400 ns
- 140 275 ns
- 165 - µJ
- 600 - µJ
- - 2.1
NOTE:
3. Turn-OffEnergyLoss (E
) isdefinedas the integralofthe instantaneous powerlossstarting at thetrailingedge of the inputpulse and ending
OFF
at the point where the collector current equals zero (ICE= 0A). The HGTD7N60C3S and HGTP7N60C3 were tested per JEDEC standard No.
24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TurnOn losses include diode losses.
Typical Performance Curves
40
DUTY CYCLE <0.5%, V
PULSE DURATION = 250µs
35
30
25
TC = 150oC
20
T
= 25oC
C
15
TC = -40oC
10
5
, COLLECTOR TO EMITTER CURRENT (A)
CE
0
I
4681012
VGE, GATE TO EMITTER VOLTAGE (V)
CE
= 10V
14
40
PULSE DURATION = 250µs,
DUTY CYCLE <0.5%,
35
= 25oC
T
C
30
25
20
15
10
5
, COLLECTOR TO EMITTER CURRENT (A)
CE
0
I
VGE = 15.0V
0246810
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
12.0V
o
C/W
10.0V
9.0V
8.5V
8.0V
7.5V
7.0V
FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS
40
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 10V
35
30
25
20
15
10
5
, COLLECTOR TO EMITTER CURRENT (A)
0
CE
I
012345
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
TC = -40oC
TC = 150oC
TC = 25oC
40
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 15V
35
30
25
20
15
10
5
, COLLECTOR TO EMITTER CURRENT (A)
CE
0
I
012345
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
TC = -40oC
TC = 25oC
TC = 150oC
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
3
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