Intersil Corporation HGTD6N50E1S, HGTD6N50E1, HGTD6N40E1S, HGTD6N40E1 Datasheet
HGTD6N40E1, HGTD6N40E1S,
HGTD6N50E1, HGTD6N50E1S
March 1997
Features
• 6A, 400V and 500V
•V
•T
CE(ON)
: 1.0µs
FALL
: 2.5V Max.
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
Applications
• Power Supplies
• Motor Drives
• Protective Circuits
Description
The HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, and
HGTD6N50E1S are n-channel enhancement-mode insulated
gate bipolar transistors (IGBTs) designed for high voltage, low
on-dissipation applications such as switching regulators and
motor drivers. These types can be operated directly from low
power integrated circuits.
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
HGTD6N40E1 TO-251AA G6N40E
HGTD6N50E1 TO-251AA G6N50E
HGTD6N40E1S TO-252AA G6N40E
HGTD6N50E1S TO-252AA G6N50E
NOTE: When ordering, use the entire part number.
6A, 400V and 500V N-Channel IGBTs
Packages
HGTD6N40E1, HGTD6N50E1
JEDEC TO-251AA
EMITTER
COLLECTOR
(FLANGE)
HGTD6N40E1S, HGTD6N50E1S
JEDEC TO-252AA
GATE
EMITTER
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
E
COLLECTOR
GATE
COLLECTOR
(FLANGE)
Absolute Maximum Ratings T
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.48 0.48 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .TJ, T
INTERSIL CORPORATION’S PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
= +25oC, Unless Otherwise Specified
C
1970
HGTD6N40E1
HGTD6N40E1S
CES
CGR
GE
C25
C90
D
STG
400 500 V
400 500 V
±20 ±20 V
7.5 7.5 A
6.0 6.0 A
60 60 W
-55 to +150 -55 to +150
HGTD6N50E1
HGTD6N50E1S UNITS
File Number
o
C
2413.4
Specifications HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S
Electrical Specifications T
= +25oC, Unless Otherwise Specified
C
PARAMETERS SYMBOL TEST CONDITIONS
Collector-Emitter Breakdown
Voltage
Gate Threshold Voltage V
Zero Gate Voltage Collector
Current
Gate-Emitter Leakage Current I
Collector-Emitter On-Voltage V
Gate-Emitter Plateau Voltage V
On-State Gate Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Energy Loss Per Cycle
(Off Switching Dissipation =
W
x Frequency)
OFF
Turn-Off Delay Time t
Fall Time t
Turn-Off Energy Loss Per Cycle
(Off Switching Dissipation =
W
x Frequency)
OFF
Thermal Resistance Junction-toCase (IGBT)
BV
CESIC
GE(TH)VGE
I
CES
GES
CE(ON)TJ
GEP
G(ON)IC
D(ON)
R
D(OFF)
F
W
OFF
D(OFF)I
FI
W
OFF
R
θJC
LIMITS
HGTD6N40E1
HGTD6N40E1S
MIN MAX MIN MAX
HGTD6N50E1
HGTD6N50E1S
UNITS
= 250µA, VGE = 0V 400 - 500 - V
= VCE, IC = 1mA 2.0 4.5 2.0 4.5 V
TJ = +150oC, VCE = 400V - 250 - - µA
TJ = +150oC, VCE = 500V - - - 250 µA
VGE = ±20V, VCE = 0V - 100 - 100 nA
= +150oC, IC = 3A, VGE = 10V - 2.9 - 2.9 V
TJ = +150oC, IC = 3A, VGE = 15V - 2.5 - 2.5 V
TJ = +25oC, IC = 3A, VGE = 10V - 2.5 - 2.5 V
TJ = +25oC, IC = 3A, VGE = 15V - 2.4 - 2.4 V
IC = 3A, VCE = 10V 6.5 (Typ) V
= 3A, VCE = 10V 6.9 (Typ) nC
Resistive Load, IC = 3A,
VCE = 400V, RL = 133Ω,
TJ = +150oC, VGE = 10V,
RG = 25Ω
90 (Typ) ns
32 (Typ) ns
24 (Typ) ns
1100 (Typ) ns
0.29 (Typ) mJ
Inductive Load (See Figure 11),
IC = 3A, V
CE(CLP)
= 400V,
RL = 133Ω, L = 50µH, TJ = +150oC,
VGE = 10V, RG = 25Ω
- 190 - 190 ns
-1-1µs
- 0.43 - 0.43 mJ
- 2.08 - 2.08
o
C/W
Typical Performance Curves
7.5
PULSE TEST, VCE = 10V
PULSE DURATION = 250µs
6.0
DUTY CYCLE < 2%
4.5
3.0
1.5
, COLLECTOR-EMITTER CURRENT (A)
CE
I
0.0
0246810
TC = +150oC
TC = +25oC
V
, GATE-TO-EMITTER VOLTAGE (V)
GE
TC = -55oC
FIGURE 1. TYPICAL TRANSFER CHARACTERISTICS FIGURE 2. TYPICAL SATURATION CHARACTERISTICS
1971
7.5
VGE = 15V
6.0
4.5
3.0
1.5
, COLLECTOR-EMITTER CURRENT (A)
CE
I
0.0
0246810
V
, COLLECTOR-TO-EMITTER VOLTAGE (V)
CE
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, T
VGE = 10V
= +25oC
C
VGE = 7.5V
VGE = 7.0V
VGE = 6.5V
VGE = 6.0V
VGE = 5.5V
VGE = 5.0V
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