Intersil Corporation HGTP3N60C3, HGTD3N60C3S Datasheet
HGTD3N60C3S, HGTP3N60C3
Data Sheet January 2000
6A, 600V, UFS Series N-Channel IGBTs
The HGTD3N60C3S and the HGTP3N60C3 are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have
the high inputimpedanceofa MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25
and 150
o
C.
o
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49113.
Ordering Information
PART NUMBER PACKAGE BRAND
HGTD3N60C3S TO-252AA G3N60C
File Number 4139.5
Features
• 6A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 130ns at T
C
• Short Circuit Rating
= 150oC
J
• Low Conduction Loss
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-252AA
COLLECTOR
(FLANGE)
G
E
HGTP3N60C3 TO-220AB G3N60C
NOTE: When ordering,use the entire part number.Add the suffix 9A
to obtain the TO-252AA variant in Tape and Reel, i.e.,
HGTD3N60C3S9A.
JEDEC TO-220AB
E
C
G
Symbol
C
COLLECTOR
(FLANGE)
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
| Copyright © Intersil Corporation 2000
HGTD3N60C3S, HGTP3N60C3
Absolute Maximum Ratings T
= 25oC
C
ALL TYPES UNITS
Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
600 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
C25
C110
CM
GES
GEM
6A
3A
24 A
±20 V
±30 V
Switching Safe Operating Area at TJ = 150oC (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA 18A at 480V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
33 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.27 W/oC
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
ARV
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Short Circuit Withstand Time (Note 2) at VGE = 10V (Figure 6) . . . . . . . . . . . . . . . . . . . . .t
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
SC
100 mJ
-40 to 150
300
260
8 µs
o
C
o
C
o
C
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
= 360V, TJ = 125oC, RG = 82Ω.
CE(PK)
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I
Collector to Emitter Saturation Voltage V
Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I
CES
ECS
CES
CE(SAT)IC
GE(TH)IC
GES
Switching SOA SSOA T
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q
Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Thermal Resistance R
GEP
g(ON)
d(ON)I
rI
d(OFF)I
fI
ON
OFF
θJC
IC = 250µA, VGE = 0V 600 - - V
IC = 3mA, VGE= 0V 16 30 - V
VCE = BV
= I
C110
VGE = 15V
CES
,
TC = 25oC - - 250 µA
= 150oC - - 2.0 mA
T
C
TC = 25oC - 1.65 2.0 V
= 150oC - 1.85 2.2 V
T
C
= 250µA, VCE = VGETC = 25oC 3.0 5.5 6.0 V
VGE = ±25V - - ±250 nA
= 150oC,
J
RG = 82Ω,
VGE = 15V, L = 1mH
IC = I
IC = I
VCE = 0.5 BV
, VCE = 0.5 BV
C110
,
C110
CES
TJ = 150oC
ICE = I
C110
V
= 0.8 BV
CE(PK)
VGE = 15V
RG= 82Ω
L = 1mH
Test Circuit (Figure 18)
V
V
= 480V 18 - - A
CE(PK)
= 600V 2 - - A
CE(PK)
CES
- 8.3 - V
VGE = 15V - 10.8 13.5 nC
= 20V - 13.8 17.3 nC
V
GE
-5-ns
CES
-10-ns
- 325 400 ns
- 130 275 ns
-85-µJ
- 245 - µJ
- - 3.75
NOTE:
3. Turn-OffEnergy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of theinput pulse and ending
OFF
at the point where the collector current equals zero (ICE= 0A). The HGTP3N60C3 and HGTD3N60C3S were tested per JEDEC standard No.
24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TurnOn losses include diode losses.
o
C/W
2
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