Intersil Corporation HGTP3N60B3, HGTD3N60B3S, HGT1S3N60B3S Datasheet

HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3

Data Sheet January 2000

7A, 600V, UFS Series N-Channel IGBTs

The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3
are MOS gated high voltage switching devices combining
the best features of MOSFETs and bipolar transistors.
These devices have the high input impedance of a MOSFET
and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only
moderately between 25

o

C and 150oC.

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

Formerly Developmental Type TA49192.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTD3N60B3S TO-252AA G3N60B
HGT1S3N60B3S TO-263AB G3N60B3

File Number 4368.1

Features

• 7A, 600V, TC = 25oC

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 115ns at T

• Short Circuit Rating

• Low Conduction Loss

Packaging

JEDEC TO-220AB

E

C

COLLECTOR

(FLANGE)

JEDEC TO-263AB

= 150oC

J

G

HGTP3N60B3 TO-220AB G3N60B3

NOTE: When ordering,usethe entirepart number. Add thesuffix 9A
to obtain theTO-252AA and TO-263AB variant in tape and reel, e.g.
HGTD3N60B3S9A.

G

E

COLLECTOR
(FLANGE)

Symbol

C

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

JEDEC TO-252AA

G

E

COLLECTOR
(FLANGE)

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 2000

HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTD3N60B3S, HGT1S3N60B3S

HGTP3N60B3 UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

600 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

CM

GES

GEM

7.0 A

3.5 A
20 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 18A at 600V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

33.3 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.27 W/oC

Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

ARV
STG

L
SC
SC

100 mJ

-55 to 150
260

5 µs

10 µs

o

C

o

C

NOTES:

1. Pulse width limited by maximum junction temperature.

2. V

= 360V, TJ = 125oC, RG = 82Ω.

CE(PK)

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

CE(SAT)IC

CES
ECS

CES

IC = 250µA, VGE = 0V 600 - - V
IC = 10mA, VGE= 0V 20 28 - V
VCE = BV

= I

C110

VGE = 15V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

GE(TH)

GES

IC = 250µA, VCE = V
VGE = ±20V - - ±250 nA

Switching SOA SSOA TJ = 150oC

RG = 82Ω
VGE = 15V

L = 500µH
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

GEP

g(ON)

IC = I

IC = I

C110
C110

VCE = 0.5 BV

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E

rI

fI

ON

OFF

IGBT and Diode at TJ = 25oC

ICE = I

C110

VCE = 0.8 BV

VGE = 15V

RG = 82Ω

L = 1mH

Test Circuit (Figure 17)

CES

TC = 25oC - - 250 µA
TC = 150oC - - 2.0 mA

,

TC = 25oC - 1.8 2.1 V
TC = 150oC - 2.1 2.5 V

GE

VCE= 600V 18 - - A

, VCE = 0.5 BV
,

VGE = 15V - 18 22 nC

CES

VGE = 20V - 21 25 nC

CES

CES

4.5 5.4 6.0 V

- 7.9 - V

-18- ns

-16- ns

- 105 - ns

-70- ns

-6675µJ

- 88 160 µJ

2

HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Thermal Resistance Junction To Case R

rI

fI

ON

OFF

θJC

IGBT and Diode at TJ = 150oC

ICE = I

C110

VCE = 0.8 BV

CES

VGE = 15V

RG = 82Ω

L = 1mH

Test Circuit (Figure 17)

-16- ns

-18- ns

- 220 295 ns

- 115 175 ns

- 130 140 µJ

- 210 325 µJ

- - 3.75

o

C/W

NOTE:

3. Turn-OffEnergy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due
to diode recovery.

Typical Performance Curves Unless Otherwise Specified

7

6

5

4

3

2

, DC COLLECTOR CURRENT (A)

1

CE

I

0

25 50 75 100 125 150

TC, CASE TEMPERATURE (oC)

V

GE

= 15V

20

TJ= 150oC, RG = 82Ω, VGE= 15V, L = 500µH

18
16
14
12
10

8
6
4
2

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

0

, COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

300 400200100 500 600

700

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

200

100

10

f

MAX1

f

MAX2

P

= CONDUCTION DISSIP ATION

, OPERATING FREQUENCY (kHz)
f

C

(DUTY FACTOR = 50%)

MAX

R

ØJC

1

1

TJ= 150oC, RG = 82Ω, L = 1mH, VCE= 480V

T

V

C

o

15V

C

75

o

75

C 10V

o

15V

C

110

10V

110oC

= 0.05/(t
= (PD- PC)/(EON + E

= 3.75oC/W, SEE NOTES

246

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

+ t

d(OFF)I

357

d(ON)I

OFF

)

)

GE

FIGURE 3. OPERATINGFREQUENCY vs COLLECTOR TO

EMITTER CURRENT

3

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

16

VCE = 360V, RG = 82Ω, TJ= 125oC

14

12

10

8

6

, SHORT CIRCUIT WITHSTAND TIME (µs)

4

SC

8

t

10 11 12 13 14 15

VGE, GATE TO EMITTER VOLTAGE (V)

I

t

SC

SC

45

40

35

30

25

20

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

15

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME