Intersil Corporation HGTP3N60A4, HGTD3N60A4S, HGT1S3N60A4S Datasheet

HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4

Data Sheet January 2000

600V, SMPS Series N-Channel IGBT

The HGTD3N60A4S, HGT1S3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25

C and 150oC.

This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been

optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49327.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTD3N60A4S TO-252AA 3N60A4 HGT1S3N60A4S TO-263AB 3N60A4 HGTP3N60A4 TO-220AB 3N60A4

NOTE: When ordering,use theentirepart number. Addthe sufﬁx 9A to obtain the TO-252AA or the TO-263AB in tape and reel, i.e. HGT1S3N60A4S9A

File Number 4825

Features

• >100kHz Operation at 390V, 3A

• 200kHz Operation at 390V, 2.5A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T

• 12mJ E

Capability

• Low Conduction Loss

• Temperature Compensating SABER Model www.intersil.com

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Packaging

JEDEC TO-252AA

COLLECTOR

(FLANGE)

JEDEC TO-263AB

= 125oC

Symbol

JEDEC TO-220AB

COLLECTOR

(FLANGE)

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

COLLECTOR

(FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Speciﬁed

ALL TYPES UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

CES

600 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

C25

C110

GES

GEM

17 A

40 A

±20 V ±30 V

Switching Safe Operating Area at TJ = 150oC, Figure 2. . . . . . . . . . . . . . . . . . . . . . . .SSOA 15A at 600V

Single Pulse Avalanche Energy at TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation Total at TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

12mJ at 3A

70 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.56 W/oC

Operating and Storage Junction Temperature Range. . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

-55 to 150

Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

PKG

300 260

NOTE:

1. Pulse width limited by maximum junction temperature.

Electrical Speciﬁcations T

= 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV Emitter to Collector Breakdown Voltage BV Collector to Emitter Leakage Current I

CES ECS

CES

IC = 250µA, VGE = 0V 600 - - V IC = 10mA, VGE= 0V 15 - - V VCE = 600V TJ = 25oC - - 250 µA

TJ = 125oC - - 2.0 mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA TJ = 150oC, RG = 50Ω, VGE = 15V

= 3A,

VGE = 15V

TJ = 25oC - 2.0 2.7 V

TJ = 125oC - 1.6 2.2 V IC = 250µA, VCE = 600V 4.5 6.1 7.0 V VGE = ±20V - - ±250 nA

15 - - A

L = 200µH, VCE= 600V

Pulsed Avalanche Energy E Gate to Emitter Plateau Voltage V On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t Turn-On Energy (Note 3) E Turn-On Energy (Note 3) E Turn-Off Energy (Note 2) E

GEP

g(ON)

fI ON1 ON2 OFF

ICE = 3A, L = 2.7mH 12 - - mJ IC = 3A, VCE = 300V - 8.8 - V IC = 3A,

VCE = 300V

IGBT and Diode at TJ = 25oC ICE = 3A VCE = 390V VGE = 15V RG= 50Ω L = 1mH Test Circuit - Figure 20

VGE = 15V - 21 25 nC VGE = 20V - 26 32 nC

-6-ns

-11- ns

-73- ns

-47- ns

-37- µJ

-5570µJ

-2535µJ

HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4

Electrical Speciﬁcations T

= 25oC, Unless Otherwise Speciﬁed (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t Turn-On Energy (Note 3) E Turn-On Energy (Note 3) E Turn-Off Energy (Note 2) E Thermal Resistance Junction To Case R

fI ON1 ON2 OFF

θJC

IGBT and Diode at TJ = 125oC ICE = 3A VCE = 390V VGE = 15V RG= 50Ω L = 1mH Test Circuit - Figure 20

- 5.5 8 ns

-1215ns

- 110 165 ns

- 70 100 ns

-37- µJ

- 90 100 µJ

-5080µJ

- - 1.8

NOTES:

2. Turn-OffEnergy Loss (E

) is defined as the integral of the instantaneous powerloss starting atthe trailing edgeof the inputpulse and ending

OFF

at the point where the collector current equals zero (ICE= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E

is the turn-on loss of the IGBT only. E

ON1

is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 20.

Typical Performance Curves Unless Otherwise Speciﬁed

VGE= 15V

TJ= 150oC, RG = 50Ω, VGE= 15V, L = 200µH

C/W

ON2

, DC COLLECTOR CURRENT (A)

25 75 100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

600

300

200

= 0.05 / (t

MAX1

= (PD- PC) / (E

MAX2

100

= CONDUCTION DISSIPATION

, OPERATING FREQUENCY (kHz)

MAX

(DUTY FACTOR = 50%)

= 1.8oC/W, SEE NOTES

ØJC

TJ= 125oC, RG = 50Ω, L = 1mH, VCE= 390V

ICE, COLLECTOR TO EMITTER CURRENT (A)

d(OFF)I

+ t

ON2

d(ON)I

+ E

OFF

)

TCV

15V

FIGURE 3. OPERATINGFREQUENCY vs COLLECTOR TO

EMITTER CURRENT

, COLLECTOR TO EMITTER CURRENT (A)

, COLLECTOR TO EMITTER VOLTAGE (V)

300 400200100 500 600

700

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

20 64

VCE = 390V, RG = 50Ω, TJ= 125oC

, SHORT CIRCUIT WITHSTAND TIME (µs)

623

10 11 12 15

, GATE TO EMITTER VOLTAGE (V)

13 14

5618

, PEAK SHORT CIRCUIT CURRENT (A)

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

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