Intersil Corporation HGTP2N120BN, HGTD2N120BNS, HGT1S2N120BNS Datasheet

HGTP2N120BN, HGTD2N120BNS,

HGT1S2N120BNS

Data Sheet January 2000

12A, 1200V, NPT Series N-Channel IGBT

The HGTP2N120BN, HGTD2N120BNS, and
HGT1S2N120BNS are Non-Punch Through (NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

Formerly Developmental Type TA49312.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTP2N120BN TO-220AB 2N120BN
HGTD2N120BNS TO-252AA 2N120BN
HGT1S2N120BNS TO-263AB 2N120BN

NOTE: When ordering,use theentirepart number. Addthesuffix 9A
to obtain the TO-263AB and TO-252AA variant in Tape and Reel,
e.g., HGT1S2N120BNS9A.

File Number 4696.2

Features

• 12A, 1200V, TC = 25oC

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 160ns at T

• Short Circuit Rating

• Low Conduction Loss

• Avalanche Rated

• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.intersil.com

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Packaging

JEDEC TO-220AB

COLLECTOR

(FLANGE)

E

= 150oC

J

C

G

Symbol

C

JEDEC TO-252AA

G

G

E

E

JEDEC TO-263AB

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

COLLECTOR

(FLANGE)

COLLECTOR

(FLANGE)

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 2000

SABER™ is a trademark of Analogy, Inc.

HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTP2N120BN,

HGTD2N120BNS

HGT1S2N120BNS UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

1200 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

CM
GES
GEM

12 A

5.6 A
20 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 12A at 1200V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

104 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/oC

Forward Voltage Avalanche Energy (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

AV

STG

18 mJ

-55 to 150

o

C
Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

SC
SC

300
260

8 µs

15 µs

o

C

o

C

NOTES:

1. Pulse width limited by maximum junction temperature.

2. ICE= 3A, L = 4mH, TJ = 25oC.

3. V

= 840V, TJ = 125oC, RG = 51Ω.

CE(PK)

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

CES
ECS

CES

IC = 250µA, VGE = 0V 1200 - - V
IC = 10mA, VGE= 0V 15 - - V
VCE = BV

CES

TC = 25oC - - 250 µA
TC = 125oC - 40 - µA
TC = 150oC - - 0.5 mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

= 2.3A,

VGE = 15V
IC = 20µA, VCE = V

TC = 25oC - 2.45 2.7 V
TC = 150oC - 3.6 4.2 V

GE

VGE = ±20V - - ±250 nA

Switching SOA SSOA TJ = 150oC, RG = 51Ω, VGE = 15V,

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 4) E
Turn-On Energy (Note 4) E
Turn-Off Energy (Note 5) E

GEP

G(ON)

rI

fI
ON1
ON2
OFF

L = 400µH, V
IC = 2.3A, VCE = 0.5 BV
IC = 2.3A,

VCE = 0.5 BV
IGBT and Diode at TJ = 25oC

ICE = 2.3A
VCE = 0.8 BV
VGE = 15V
RG = 51Ω
L = 5mH
Test Circuit (Figure 18)

CE(PK)

CES

CES

= 1200V

CES

VGE = 15V - 24 30 nC
VGE = 20V - 32 39 nC

6.0 6.8 - V

12 - - A

- 10.2 - V

-2125ns

-1115ns

- 185 240 ns

- 100 130 ns

-83- µJ

- 370 500 µJ

- 195 270 µJ

2

HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 4) E
Turn-On Energy (Note 4) E
Turn-Off Energy (Note 5) E
Thermal Resistance Junction To Case R

rI

fI
ON1
ON2
OFF

θJC

IGBT and Diode at TJ = 150oC
ICE = 2.3A
VCE = 0.8 BV

CES

VGE = 15V
RG= 51Ω
L = 5mH
Test Circuit (Figure 18)

-2530ns

-1115ns

- 195 260 ns

- 160 200 ns

-83- µJ

- 725 1000 µJ

- 280 380 µJ

- - 1.2

NOTES:

4. Valuesfor two Turn-On loss conditions are shown forthe convenience of the circuit designer.E

is the turn-on loss of the IGBT only. E

ON1

ON2

turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18.

5. Turn-OffEnergy Loss (E

) is defined as the integral ofthe instantaneous powerloss starting atthe trailing edgeof the input pulse and ending

OFF

at the point where the collector current equalszero (ICE= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Typical Performance Curves Unless Otherwise Specified

12

V

10

8

6

4

, DC COLLECTOR CURRENT (A)

2

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

GE

= 15V

14

TJ= 150oC, RG = 51Ω, VGE= 15V, L = 1mH

12

10

8

6

4

2

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

600 800400200 1000 1200

o

C/W

is the

1400

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

TJ= 150oC, RG = 51Ω, L = 5mH, VCE= 960V

100

50

f

MAX1

f

MAX2

, OPERATING FREQUENCY (kHz)

P

MAX

f

R

10

0.5

TC = 75oC, VGE = 15V, IDEAL DIODE

= 0.05 / (t
= (PD- PC) / (E

= CONDUCTION DISSIPATION

C

(DUTY FACTOR = 50%)

= 1.2oC/W, SEE NOTES

ØJC

ICE, COLLECTOR TO EMITTER CURRENT (A)

d(OFF)I

1.0

ON2

+ t

d(ON)I

+ E

OFF

)

)

110oC
110

T

C

o

C

V

15V
12V

GE

T

V

C

o

15V

C

75

o

12V

75

C

FIGURE 3. OPERATINGFREQUENCY vs COLLECTOR TO

EMITTER CURRENT

3

GE

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

25

VCE = 840V, RG = 51Ω, TJ= 125oC

20

15

10

, SHORT CIRCUIT WITHSTAND TIME (µs)

5

SC

t

5.02.0

12 13 14 15

VGE, GATE TO EMITTER VOLTAGE (V)

t

SC I

SC

40

35

30

25

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

20

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME