Intersil Corporation HGTD10N50F1S, HGTD10N40F1S, HGTD10N40F1 Datasheet
HGTD10N40F1, HGTD10N40F1S,
HGTD10N50F1, HGTD10N50F1S
March 1997
Features
• 10A, 400V and 500V
•V
•T
CE(ON)
FALL
2.5V Max.
≤1.4µs
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
Applications
• Power Supplies
• Motor Drives
• Protective Circuits
Description
The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and
HGTD10N50F1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching
regulators and motor drivers. These types can be operated
directly from low power integrated circuits.
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
HGTD10N40F1 TO-251AA G10N40
HGTD10N50F1 TO-251AA G10N50
HGTD10N40F1S TO-252AA G10N40
HGTD10N50F1S TO-252AA G10N50
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e., HGTD10N40F19A.
10A, 400V and 500V N-Channel IGBTs
Packages
HGTD10N40F1, HGTD10N50F1
JEDEC TO-251AA
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
HGTD10N40F1S, HGTD10N50F1S
JEDEC TO-252AA
COLLECTOR
GATE
EMITTER
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
E
(FLANGE)
Absolute Maximum Ratings T
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 0.6 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .TJ, T
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
= +25oC, Unless Otherwise Specified
C
3-1
HGTD10N40F1
HGTD10N40F1S
CES
CGR
GE
C25
C90
D
STG
400 500 V
400 500 V
±20 ±20 V
12 12 A
10 10 A
75 75 W
-55 to +150 -55 to +150
HGTD10N50F1
HGTD10N50F1S UNITS
File Number 2425.4
o
C
Specifications HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S
,
Electrical Specifications T
PARAMETERS SYMBOL TEST CONDITIONS
Collector-Emitter Breakdown
Voltage
Gate Threshold Voltage V
Zero Gate Voltage Collector
Current
Gate-Emitter Leakage Current I
Collector-Emitter On-Voltage V
Gate-Emitter Plateau Voltage V
On-State Gate Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Energy Loss Per Cycle
(Off Switching Dissipation = W
Frequency)
Turn-Off Delay Time t
Fall Time t
Turn-Off Energy Loss Per Cycle
(Off Switching Dissipation = W
Frequency)
Thermal Resistance Junction-toCase (IGBT)
= +25oC, Unless Otherwise Specified
C
BV
CESIC
GE(TH)VGE
I
CES
= 250µA, VGE = 0V 400 - 500 - V
= VCE, IC = 1mA 2.0 4.5 2.0 4.5 V
TJ = +150oC, VCE = 400V - 250 - - µA
TJ = +150oC, VCE = 500V - - - 250 µA
GES
CE(ON)TJ
VGE = ±20V, VCE = 0V - 100 - 100 nA
= +150oC, IC = 5A, VGE = 10V - 2.5 - 2.5 V
TJ = +150oC, IC = 5A, VGE = 15V - 2.2 - 2.2 V
TJ = +25oC, IC = 5A, VGE = 10V - 2.5 - 2.5 V
TJ = +25oC, IC = 5A, VGE = 15V - 2.2 - 2.2 V
IC = 5A, VCE = 10V 5.3 (Typ) V
= 5A, VCE = 10V 13.4 (Typ) nC
Resistive Load, IC = 5A,
VCE = 400V, RL = 80Ω,
TJ = +150oC, VGE = 10V,
RG = 25Ω
Inductive Load (See Figure 11),
IC = 5A, V
RL = 80Ω, L = 50µH, TJ = +150oC,
VGE = 10V, RG = 25Ω
OFF
OFF
GEP
G(ON)IC
D(ON)
RI
D(OFF)
FI
W
OFF
x
D(OFF)
FI
W
OFF
x
R
θJC
CE(CLP)
= 400V,
LIMITS
HGTD10N40F1
HGTD10N40F1S
HGTD10N50F1
HGTD10N50F1S
MIN MAX MIN MAX
45 (Typ) ns
35 (Typ) ns
130 (Typ) ns
1400 (Typ) ns
0.64 (Typ) mJ
- 375 - 375 ns
- 1200 - 1200 ns
- 1.2 - 1.2 mJ
- 1.67 - 1.67
UNITS
o
C/W
Typical Performance Curves
12
PULSE TEST, VCE = 10V
PULSE DURATION = 250µs
10
DUTY CYCLE < 2%
8
6
4
2
, COLLECTOR-EMITTER CURRENT (A)
CE
I
0
0246810
TC = -55oC
T
= +25oC
C
T
= +150oC
C
, GATE-TO-EMITTER VOLTAGE (V)
V
GE
FIGURE 1. TYPICAL TRANSFER CHARACTERISTICS FIGURE 2. TYPICAL SATURATION CHARACTERISTICS
3-2
10
VGE = 10V
8
6
4
2
, COLLECTOR-EMITTER CURRENT (A)
CE
I
0
= 15V
GE
V
0246810
VGE, GATE-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%
T
= +25oC
C
VGE = 6.0V
VGE = 5.5V
VGE = 5.0V
VGE = 4.5V
VGE = 4.0V
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