Intersil Corporation HGTA32N60E2 Datasheet
HGTA32N60E2
April 1995
Features
• 32A, 600V
• Latch Free Operation
• Typical Fall Time 620ns
• High Input Impedance
• Low Conduction Loss
Description
The IGBT is a MOS gated high voltage switching device
combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between +25
IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are
essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contactors.
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
HGTA32N60E2 TO-218 GA32N60E2
NOTE: When ordering, use the entire part number.
o
C and +150oC.
32A, 600V N-Channel IGBT
Package
JEDEC MO-093AA (5 LEAD TO-218)
COLLECTOR
(FLANGE)
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
G
EMITTER
KELVIN
5 EMITTER
C
E
4 EMITTER KELVIN
3 COLLECTOR
2 NO CONNECTION
1 GATE
Absolute Maximum Ratings T
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
at VGE = 15V at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . .I
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Switching Sage Operating Area TJ = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA 200A at 0.8 BV
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Short Circuit Withstand Time (Note 2)at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junctions temperature.
2. V
CE(PEAK)
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027
= 360V, TC = +125oC, RGE = 25Ω.
INTERSIL IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
= +25oC, Unless Otherwise Specified
C
at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
CES
CGR
C25
C90
CM
GES
GEM
STG
SC
SC
HGTA32N60E2 UNITS
600 V
600 V
50 A
32 A
200 A
±20 V
±30 V
CES
D
L
208 W
-55 to +150
260
3 µs
15 µs
-
o
C
o
C
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
3-116
File Number 2833.3
Specifications HGTA32N60E2
Electrical Specifications T
= +25oC, Unless Otherwise Specified
C
PARAMETERS SYMBOL TEST CONDITIONS
Collector-Emitter Breakdown Voltage BV
Collector-Emitter Leakage Current I
Collector-Emitter Saturation Voltage V
Gate-Emitter Threshold Voltage V
Gate-Emitter Leakage Current I
Gate-Emitter Plateau Voltage V
On-State Gate Charge Q
Current Turn-On Delay Time t
Current Rise Time t
CES
CES
CE(SAT)IC
GE(TH)IC
GES
GEP
G(ON)
D(ON)I
RI
LIMITS
UNITSMIN TYP MAX
IC = 250µA, VGE = 0V 600 - - V
VCE = BV
CES
VCE = 0.8 BV
= I
,
C90
TC = +25oC - - 250 µA
CESTC
= +125oC - - 4.0 mA
TC = +25oC - 2.4 2.9 V
VGE = 15V
TC = +125oC - 2.4 3.0 V
= 1.0mA,
VCE = V
GE
TC = +25oC 3.0 4.5 6.0 V
VGE = ±20V - - ±500 nA
IC = I
, VCE = 0.5 BV
C90
IC = I
,
C90
VCE = 0.5 BV
CES
VGE = 15V - 200 260 nC
CES
- 6.5 - V
VGE = 20V - 265 345 nC
L = 500µH, IC = I
, RG = 25Ω,
C90
- 100 - ns
VGE = 15V, TJ = +125oC,
VCE = 0.8 BV
CES
- 150 - ns
Current Turn-Off Delay Time t
D(OFF)I
Current Fall Time t
Turn-Off Energy (Note 1) W
Thermal Resistance R
FI
OFF
θJC
- 630 820 ns
- 620 800 ns
- 3.5 - mJ
- 0.5 0.6
NOTE:
1. Turn-Off Energy Loss (W
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
OFF
ending at the point where the collector current equals zero (ICE = 0A) The HGTA32N60E2 was tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
100
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V
80
60
= +150oC
T
40
20
, COLLECTOR-EMITTER CURRENT (A)
CE
I
0
0246810
C
TC = +25oC
TC = -40oC
V
, GATE-TO-EMITTER VOLTAGE (V)
GE
CE
= 15V
FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL) FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)
100
VGE = 15V
90
80
70
60
50
40
30
20
, COLLECTOR-EMITTER CURRENT (A)
10
CE
I
= 8.0V
V
GE
= 5.5V
V
GE
0
02 4 6 810
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
CE
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, T
= 10V
V
GE
= +25oC
C
VGE = 7.5V
VGE = 7.0V
VGE = 6.5V
= 6.0V
V
GE
o
C/W
3-117
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