Intersil Corporation HGT5A40N60A4D Datasheet

HGT5A40N60A4D

Data Sheet February 2000

600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode

The HGT5A40N60A4D is a MOS gated high voltage
switching device combining the best features of a MOSFET
and a bipolar transistor. This device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25

o

C and 150oC. The
IGBT used is the development type TA49347. The diode
used in anti-parallel is the development type 49374.

This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49349.

Ordering Information

PART NUMBER PACKAGE BRAND

HGT5A40N60A4D TO-247-ST 40N60A4D

NOTE: When ordering, use the entire part number.

File Number 4783.1

Features

• 100kHz Operation at 390V, 40A

• 200kHz Operation at 390V, 20A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . . 55ns at T

• Low Conduction Loss

Packaging

JEDEC STYLE STRETCH TO-247

E

C

G

COLLECTOR
(FLANGE)

= 125

J

o

Symbol

C

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

2-1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 2000

HGT5A40N60A4D

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGT5A40N60A4D UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

CES

600 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

CM

GES

GEM

75 A
63 A

300 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . .SSOA 200A at 600V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

Power Dissipation Derating TC > 25oC5W/

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

STG

L

625 W

-55 to 150
260

o

C

o

C

o

C

NOTE:

1. Pulse width limited by maximum junction temperature.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Collector to Emitter Leakage Current I

CES

CES

IC = 250µA, VGE = 0V 600 - - V
VCE = BV

CES

TJ = 25oC - - 250 µA
TJ = 125oC - - 3.0 mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA TJ = 150oC, RG = 2.2Ω, VGE = 15V

= 40A,

VGE = 15V

IC = 250µA, VCE = V

TJ = 25oC - 1.7 2.7 V
TJ = 125oC - 1.5 2.0 V

GE

4.5 5.6 7 V

VGE = ±20V - - ±250 nA

200 - - A

L = 100µH, VCE= 600V
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 2) E
Turn-On Energy (Note 2) E
Turn-Off Energy (Note 3) E

GEP

g(ON)

rI

fI
ON1
ON2
OFF

IC = 40A, VCE = 0.5 BV
IC = 40A,

VCE = 0.5 BV

CES

CES

VGE = 15V - 350 405 nC
VGE = 20V - 450 520 nC

IGBT and Diode at TJ = 25oC
ICE = 40A
VCE = 0.65 BV

CES

VGE =15V
RG= 2.2Ω
L = 200µH
Test Circuit (Figure 24)

- 8.5 - V

-25- ns

-18- ns

- 145 - ns

-35- ns

- 400 - µJ

- 850 - µJ

- 370 - µJ

2-2

HGT5A40N60A4D

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 2) E
Turn-On Energy (Note 2) E
Turn-Off Energy (Note 3) E
Diode Forward Voltage V
Diode Reverse Recovery Time t

rI

fI
ON1
ON2
OFF

EC

rr

IGBT and Diode at TJ = 125oC
ICE = 40A
VCE = 0.65 BV

CES

VGE = 15V

-27- ns

-20- ns

- 185 225 ns

RG= 2.2Ω
L = 200µH
Test Circuit (Figure 24)

-5595ns

- 400 - µJ

- 1220 1400 µJ

- 700 800 µJ
IEC = 40A - 2.25 2.7 V
IEC = 40A, dIEC/dt = 200A/µs - 48 55 ns
IEC = 1A, dIEC/dt = 200A/µs - 38 45 ns

Thermal Resistance Junction To Case R

θJC

IGBT - - 0.2
Diode - - 1

NOTES:

2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E

is the turn-on loss of the IGBT only. E

ON1

is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 24.

3. Turn-OffEnergy Loss (E

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

OFF

at the point where the collector current equals zero (ICE= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

o

C/W

o

C/W

ON2

Typical Performance Curves Unless Otherwise Specified

80

70

PACKAGE LIMITED

60

50

40

30

20

, DC COLLECTOR CURRENT (A)

10

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

V

= 15V

GE

225

TJ= 150oC, RG = 2.2Ω, VGE= 15V, L = 100µH

200
175
150
125
100

75
50
25

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0

, COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

300 400200100 500 600

700

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

2-3