Intersil Corporation HGTP7N60C3D, HGT1S7N60C3DS Datasheet
HGTP7N60C3D, HGT1S7N60C3DS
Data Sheet January 2000
14A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diodes
The HGTP7N60C3D and HGT1S7N60C3DS are MOS
gated high voltage switching devices combining the best
featuresof MOSFETs and bipolar transistors. These devices
have the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
o
25
C and 150oC. The IGBT used is developmental type
TA49115. The diode used in anti-parallel with the IGBT is
developmental type TA49057.
The IGBT is ideal for many high voltage s witchingapplications
operating at moderate frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, rela ys and contactors.
Formerly Developmental Type TA49121.
Ordering Information
PART NUMBER PACKAGE BRAND
HGTP7N60C3D TO-220AB G7N60C3D
HGT1S7N60C3DS TO-263AB G7N60C3D
NOTE: When ordering, use theentirepart number.Add the suffix9Ato
obtaintheTO-263AB variantintape and reel,i.e.HGT1S7N60C3DS9A.
Symbol
C
File Number 4150.2
Features
• 14A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
COLLECTOR (FLANGE)
JEDEC TO-263AB
COLLECTOR
GATE
EMITTER
(FLANGE)
= 150oC
J
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
| Copyright © Intersil Corporation 2000
HGTP7N60C3D, HGT1S7N60C3DS
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
HGTP7N60C3D, HGT1S7N60C3D
HGT1S7N60C3DS UNITS
Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
600 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Average Diode Forward Current at 110oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(AVG)
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
C25
C110
CM
GES
GEM
14 A
7A
8A
56 A
±20 V
±30 V
Switching Safe Operating Area at TJ = 150oC (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA 40A at 480V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
60 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.487 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
STG
L
SC
SC
-40 to 150
260
1 µs
8 µs
o
C
o
C
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
= 360V, TJ = 125oC, RG = 50Ω.
CE(PK)
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BV
Collector to Emitter Leakage Current I
CES
CES
IC = 250µA, VGE = 0V 600 - - V
VCE = BV
VCE = BV
Collector to Emitter Saturation Voltage V
CE(SAT)IC
= I
C110
VGE = 15V
Gate-Emitter Threshold Voltage V
GE(TH)
IC = 250µA,
VCE = V
Gate-Emitter Leakage Current I
GES
VGE = ±25V - - ±250 nA
Switching SOA SSOA TJ = 150oC
RG = 50Ω
VGE = 15V
L = 1mH
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q
GEP
G(ON)
IC = I
IC = I
C110
C110
VCE = 0.5 BV
Current Turn-On Delay Time t
d(ON)I
Current Rise Time t
Current Turn-Off Delay Time t
d(OFF)I
Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Diode Forward Voltage V
rI
fI
ON
OFF
EC
TJ = 150oC
ICE = I
C110
V
CE(PK)
VGE = 15V
RG= 50Ω
L = 1mH
IEC = 7A - 1.9 2.5 V
CES
CES
,
GE
, VCE = 0.5 BV
,
CES
= 0.8 BV
CES
TC = 25oC - - 250 µA
TC = 150oC - - 2.0 mA
TC = 25oC - 1.6 2.0 V
TC = 150oC - 1.9 2.4 V
TC = 25oC 3.0 5.0 6.0 V
V
V
= 480V 40 - - A
CE(PK)
= 600V 6 - - A
CE(PK)
CES
-8-V
VGE = 15V - 23 30 nC
VGE = 20V - 30 38 nC
- 8.5 - ns
- 11.5 - ns
- 350 400 ns
- 140 275 ns
- 165 - µJ
- 600 - µJ
2
HGTP7N60C3D, HGT1S7N60C3DS
Electrical Specifications T
= 25oC, Unless Otherwise Specified (Continued)
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Diode Reverse Recovery Time t
rr
IEC = 7A, dIEC/dt = 200A/µs - 25 35 ns
IEC = 1A, dIEC/dt = 200A/µs - 18 30 ns
Thermal Resistance R
θJC
IGBT - - 2.1
Diode - - 2.0
NOTE:
3. Turn-OffEnergyLoss(E
) is definedastheintegraloftheinstantaneous power loss starting at the trailing edge of the input pulse andending
OFF
at the point where the collector current equals zero (ICE= 0A). The HGTP7N60C3D and HGT1S7N60C3DS were tested per JEDEC standard
No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Turn-On losses include diode losses.
Typical Performance Curves
40
DUTY CYCLE <0.5%, V
PULSE DURATION = 250µs
35
30
25
= 150oC
T
C
20
TC = 25oC
15
= -40oC
T
C
10
5
, COLLECTOR TO EMITTER CURRENT (A)
0
CE
I
46 81012
VGE, GATE TO EMITTER VOLTAGE (V)
CE
= 10V
14
40
PULSE DURATION = 250µs,
DUTY CYCLE <0.5%,
35
= 25oC
T
C
30
25
VGE = 15.0V
20
15
10
5
, COLLECTOR TO EMITTER CURRENT (A)
0
CE
I
0246810
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
12.0V
o
C/W
o
C/W
10.0V
9.0V
8.5V
8.0V
7.5V
7.0V
FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS
40
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 10V
35
30
25
20
15
10
5
, COLLECTOR TO EMITTER CURRENT (A)
0
CE
I
012345
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
TC = -40oC
TC = 150oC
TC = 25oC
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
40
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 15V
35
30
25
20
15
10
5
, COLLECTOR TO EMITTER CURRENT (A)
CE
I
0
012345
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
TC = -40oC
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
TC = 25oC
TC = 150oC
3
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