Intersil Corporation HGTP7N60A4D, HGTG7N60A4D, HGT1S7N60A4DS Datasheet

HGTG7N60A4D, HGTP7N60A4D,

HGT1S7N60A4DS

Data Sheet March 2000

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25

C and 150oC. The IGBT used is the development type TA49331. The diode used in anti-parallel is the development type TA49370.

This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been

optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49333.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG7N60A4D TO-247 7N60A4D HGTP7N60A4D TO-220AB 7N60A4D HGT1S7N60A4DS TO-263AB 7N60A4D

NOTE: When ordering, use the entirepart number.Add the sufﬁx 9A to obtain the TO-263AB variant in tape and reel, e.g., HGT1S7N60A4DS9A.

File Number 4827.1

Features

• >100kHz Operation At 390V, 7A

• 200kHz Operation At 390V, 5A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 75ns at T

• Low Conduction Loss

• Temperature Compensating SABER™ Model www.intersil.com

Packaging

JEDEC STYLE TO-247

COLLECTOR (FLANGE)

JEDEC TO-220AB

= 125oC

Symbol

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

2-1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

SABER™ is a trademark of Analogy, Inc. | 1-888-INTERSIL or 321-724-7143

JEDEC TO-263AB

COLLECTOR (FLANGE)

HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Speciﬁed

ALL TYPES UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

CES

600 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

C25

C110

GES

GEM

34 A 14 A 56 A

±20 V ±30 V

Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA 35A at 600V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

125 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

-55 to 150

Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

PKG

300

260

NOTE:

1. Pulse width limited by maximum junction temperature.

Electrical Speciﬁcations T

= 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV Collector to Emitter Leakage Current I

CES

IC = 250µA, VGE = 0V 600 - - V VCE = 600V TJ = 25oC - - 250 µA

TJ = 125oC--2mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA TJ = 150oC, RG = 25Ω, VGE = 15V,

= 7A,

VGE = 15V

TJ = 25oC - 1.9 2.7 V

TJ = 125oC - 1.6 2.2 V IC = 250µA, VCE = 600V 4.5 5.9 7 V VGE = ±20V - - ±250 nA

35 - - A

L = 100µH, VCE = 600V

Gate to Emitter Plateau Voltage V On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t Turn-On Energy E Turn-On Energy E Turn-Off Energy (Note 2) E Current Turn-On Delay Time t

d(ON)I

Current Rise Time t Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t Turn-On Energy (Note 2) E Turn-On Energy (Note 2) E Turn-Off Energy (Note 3) E

GEP

g(ON)

fI ON1 ON2 OFF

IC = 7A, VCE = 300V - 9 - V IC = 7A,

VCE = 300V

IGBT and Diode at TJ = 25oC, ICE = 7A, VCE = 390V, VGE = 15V, RG = 25Ω, L = 1mH, Test Circuit (Figure 24)

VGE = 15V - 37 45 nC VGE = 20V - 48 60 nC

-11- ns

- 100 - ns

-45- ns

-55- µJ

- 120 150 µJ

-6075µJ

IGBT and Diode at TJ = 125oC, ICE = 7A, VCE = 390V, VGE = 15V, RG= 25Ω, L = 1mH, Test Circuit (Figure 24)

-10- ns

-7-ns

- 130 150 ns

-7585ns

-50- µJ

- 200 215 µJ

- 125 170 µJ

2-2

HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS

Electrical Speciﬁcations T

= 25oC, Unless Otherwise Speciﬁed (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Diode Forward Voltage V Diode Reverse Recovery Time t

IEC = 7A - 2.4 - V IEC = 7A, dIEC/dt = 200A/µs - 34 - ns IEC = 1A, dIEC/dt = 200A/µs - 22 - ns

Thermal Resistance Junction To Case R

θJC

IGBT - - 1.0 Diode - - 2.2

NOTES:

2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E

is the turn-on loss of the IGBT only. E

ON1

is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 24.

3. Turn-Off Energy Loss (E

) is defined as the integral of the instantaneouspower loss starting at the trailing edge of the input pulse and ending

OFF

at the point where the collector current equals zero (ICE= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Typical Performance Curves Unless Otherwise Speciﬁed

VGE= 15V

TJ= 150oC, RG = 25Ω, VGE= 15V, L = 100µH

o o

C/W C/W

ON2

, DC COLLECTOR CURRENT (A)

25 75 100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

500

200

100

= 0.05 / (t

MAX1

= (PD- PC) / (E

MAX2

= CONDUCTION DISSIPATION

, OPERATING FREQUENCY (kHz)

MAX

(DUTY FACTOR = 50%)

= 1.0oC/W, SEE NOTES

ØJC

TJ= 125oC, RG = 25Ω, L = 1mH, VCE= 390V

, COLLECTOR TO EMITTER CURRENT (A)

d(OFF)I

+ t

ON2

d(ON)I

+ E

OFF

)

TCV

, COLLECTOR TO EMITTER CURRENT (A)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

300 400200100 500 600

700

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

15V

20510

, SHORT CIRCUIT WITHSTAND TIME (µs)

VCE = 390V, RG = 25Ω, TJ= 125oC

11 12 15

VGE, GATE TO EMITTER VOLTAGE (V)

13 14

14016

120

100

, PEAK SHORT CIRCUIT CURRENT (A)

FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO

EMITTER CURRENT

2-3

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

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