Intersil Corporation HGTP5N120BN, HGT1S5N120BNS Datasheet
HGTP5N120BN, HGT1S5N120BNS
Data Sheet January 2000 File Number 4599.2
21A, 1200V, NPT Series N-Channel IGBTs
The HGTP5N120BN and the HGT1S5N120BNS are
Non-Punch Through (NPT) IGBT designs. They are new
members of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and
bipolar transistors.This device has the high inputimpedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49308.
Ordering Information
PART NUMBER PACKAGE BRAND
HGTP5N120BN TO-220AB 5N120BN
HGT1S5N120BNS TO-263AB 5N120BN
NOTE: When ordering,use the entire part number.Addthe suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S5N120BNS9A.
Features
• 21A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 175ns at T
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.intersil.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-220AB (ALTERNATE VERSION)
COLLECTOR
(FLANGE)
E
C
G
= 150oC
J
Symbol
C
JEDEC TO-263AB
G
E
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
COLLECTOR
(FLANGE)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
SABER™ is a trademark of Analogy, Inc.
1-888-INTERSIL or 321-724-7143
| Copyright © Intersil Corporation 2000
HGTP5N120BN, HGT1S5N120BNS
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
HGTP5N120BN,
HGT1S5N120BNS UNITS
Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
1200 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
C25
C110
CM
GES
GEM
21 A
10 A
40 A
±20 V
±30 V
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 30A at 1200V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
167 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33 W/oC
Forward Voltage Avalanche Energy (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
AV
STG
36 mJ
-55 to 150
o
C
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
SC
SC
300
260
8 µs
15 µs
o
C
o
C
NOTES:
1. Pulse width limited by maximum junction temperature.
2. ICE = 12A, L = 500µH.
3. V
= 840V, TJ = 125oC, RG= 25Ω.
CE(PK)
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I
CES
ECS
CES
IC = 250µA, VGE = 0V 1200 - - V
IC = 10mA, VGE= 0V 15 - - V
VCE = BV
CES
TC = 25oC - - 250 µA
TC = 125oC - 100 - µA
TC = 150oC - - 1.5 mA
Collector to Emitter Saturation Voltage V
CE(SAT)IC
= 5A,
TC = 25oC - 2.45 2.7 V
VGE = 15V
TC = 150oC - 3.7 4.2 V
Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I
GE(TH)
GES
IC = 45µA, VCE = V
GE
VGE = ±20V - - ±250 nA
Switching SOA SSOA TJ = 150oC, RG = 25Ω,VGE = 15V,
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q
GEP
G(ON)
L = 5mH, V
IC = 5A, VCE = 0.5 BV
IC = 5A,
VCE = 0.5 BV
CE(PK)
CES
= 1200V
CES
VGE = 15V - 53 65 nC
VGE = 20V - 60 72 nC
6.0 6.8 - V
30 - - A
- 10.5 - V
2
HGTP5N120BN, HGT1S5N120BNS
Electrical Specifications T
= 25oC, Unless Otherwise Specified (Continued)
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Current Turn-On Delay Time t
d(ON)I
IGBT and Diode at TJ = 25oC,
-2225ns
ICE = 5A,
Current Rise Time t
Current Turn-Off Delay Time t
d(OFF)I
Current Fall Time t
Turn-On Energy (Note 4) E
Turn-On Energy (Note 4) E
Turn-Off Energy (Note 5) E
Current Turn-On Delay Time t
d(ON)I
rI
fI
ON1
ON2
OFF
VCE = 0.8 BV
CES
,
VGE = 15V,
RG = 25Ω,
L = 5mH,
Test Circuit (Figure 18)
IGBT and Diode at TJ = 150oC,
-1520ns
- 160 180 ns
- 130 160 ns
- 220 - µJ
- 450 600 µJ
- 390 450 µJ
-2025ns
ICE = 5A,
Current Rise Time t
Current Turn-Off Delay Time t
d(OFF)I
Current Fall Time t
Turn-On Energy (Note 4) E
Turn-On Energy (Note 4) E
Turn-Off Energy (Note 5) E
Thermal Resistance Junction To Case R
rI
fI
ON1
ON2
OFF
θJC
VCE = 0.8 BV
CES
,
VGE = 15V,
RG = 25Ω,
L = 5mH,
Test Circuit (Figure 18)
-1520ns
- 182 280 ns
- 175 200 ns
- 220 - µJ
- 1000 1300 µJ
- 560 800 µJ
- - 0.75
NOTES:
4. Values for twoT urn-Onloss conditions are shown for the convenienceof the circuit designer.E
is the turn-on lossof theIGBT only. E
ON1
ON2
turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18.
5. Turn-Off Energy Loss (E
) is definedas the integralof the instantaneouspower loss starting at the trailing edge of the input pulse and ending
OFF
at the point where the collector currentequals zero (ICE= 0A). All devices were tested per JEDEC Standard No.24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
o
C/W
is the
Typical Performance Curves Unless Otherwise Specified
25
VGE= 15V
20
15
10
5
, DC COLLECTOR CURRENT (A)
CE
I
0
25 75 100 125 150
FIGURE 1. DC COLLECTOR CURRENT vs CASE
50
TC, CASE TEMPERATURE (oC)
TEMPERATURE
35
TJ= 150oC, RG = 25Ω, VGE= 15V, L = 5mH
30
25
20
15
10
5
, COLLECTOR TO EMITTER CURRENT (A)
CE
0
I
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
600 800400200 1000 1200
14000
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
3
Loading...