Intersil Corporation HGTP3N60A4D, HGT1S3N60A4DS Datasheet

HGT1S3N60A4DS, HGTP3N60A4D

Data Sheet January 2000

600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode

The HGT1S3N60A4DS and the HGTP3N60A4D are MOS
gated high voltage switching devices combining the best
featuresof MOSFETs and bipolar transistors. These devices
have the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between

o

25

C and 150oC. The IGBT used is the development type
TA49327. The diode used in anti-parallel is the development
type TA49369.

This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been

optimized for high frequency switch mode power
supplies.

Formerly Developmental Type TA49329.

Ordering Information

File Number 4818

Features

• >100kHz Operation At 390V, 3A

• 200kHz Operation At 390V, 2.5A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T

• Low Conduction Loss

• Temperature Compensating SABER™ Model
www.intersil.com

Packaging

JEDEC TO-263AB

COLLECTOR

G

E

(FLANGE)

= 125oC

J

PART NUMBER PACKAGE BRAND

HGT1S3N60A4DS TO-263AB 3N60A4D
HGTP3N60A4D TO-220AB 3N60A4D

NOTE: Whenordering, use the entirepart number.Add the suffix9A
to obtain the TO-263AB in tape and reel, i.e., HGT1S3N60A4DS9A.

JEDEC TO-220AB

E

C

Symbol

C

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

COLLECTOR

(FLANGE)

G

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 2000

SABER™ is a trademark of Analogy, Inc.

HGT1S3N60A4DS, HGTP3N60A4D

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGT1S3N60A4DS

HGTP3N60A4D UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

CES

600 V

Collector Current Continuous

At TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Collector Current Pulsed (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

CM

GES

GEM

17 A

8A

40 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2). . . . . . . . . . . . . . . . . . . . . . . SSOA 15A at 600V

Power Dissipation Total at TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

D

70 W

Power Dissipation Derating TC > 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.58 W/oC

Operating and Storage Junction Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .TJ, T

STG

-55 to 150

Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

PKG

300
260

o

C

o

C

o

C

NOTE:

1. Pulse width limited by maximum junction temperature.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Collector to Emitter Leakage Current I

CES

CES

IC = 250µA, VGE = 0V 600 - - V
VCE = 600V TJ = 25oC - - 250 µA

TJ = 125oC - - 3.0 mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA TJ = 150oC, RG = 50Ω, VGE = 15V,

= 3A,

VGE = 15V

TJ = 25oC - 2.0 2.7 V

TJ = 125oC - 1.6 2.2 V
IC = 250µA, VCE = 600V 4.5 6.1 7.0 V
VGE = ±20V - - ±250 nA

15 - - A

L = 200µH, VCE = 600V

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 2) E
Turn-On Energy (Note 2) E
Turn-Off Energy (Note 3) E

GEP

g(ON)

rI

fI
ON1
ON2
OFF

IC = 3A, VCE = 300V - 8.8 - V
IC = 3A,

VCE = 300V

IGBT and Diode at TJ = 25oC,
ICE = 3A,
VCE = 390V,
VGE = 15V,

VGE = 15V - 21 25 nC
VGE = 20V - 26 32 nC

-6-ns

-11- ns

-73- ns

RG = 50Ω,
L = 1mH,
Test Circuit (Figure 24)

-47- ns

-37- µJ

-5570µJ

-2535µJ

2

HGT1S3N60A4DS, HGTP3N60A4D

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 2) E
Turn-On Energy (Note 2) E
Turn-Off Energy (Note 3) E
Diode Forward Voltage V
Diode Reverse Recovery Time t

rI

fI
ON1
ON2
OFF

EC

rr

IGBT and Diode at TJ = 125oC,
ICE = 3A,
VCE = 390V, VGE = 15V,
RG= 50Ω,

- 5.5 8 ns

-1215ns

- 110 165 ns

L = 1mH,
Test Circuit (Figure 24)

- 70 100 ns

-37- µJ

- 90 100 µJ

-5080µJ
IEC = 3A - 2.25 - V
IEC = 3A, dIEC/dt = 200A/µs - 29 - ns
IEC = 1A, dIEC/dt = 200A/µs - 19 - ns

Thermal Resistance Junction To Case R

θJC

IGBT - - 1.8
Diode - - 3.5

NOTES:

2. Valuesfor two Turn-On loss conditions are shown fortheconvenienceof the circuit designer. E

is the turn-on loss of the IGBT only.E

ON1

is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJas the IGBT. The diode type is specified in
Figure 24.

3. Turn-Off Energy Loss (E

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and

OFF

ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

o
o

C/W
C/W

ON2

Typical Performance Curves Unless Otherwise Specified

20

16

12

8

4

, DC COLLECTOR CURRENT (A)

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTORCURRENT vs CASE

TEMPERATURE

VGE= 15V

20

TJ= 150oC, RG = 50Ω, VGE= 15V, L = 200µH

16

12

8

4

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

0

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

300 400200100 500 600

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

700

3