Intersil Corporation HGTP2N120CND, HGT1S2N120CNDS Datasheet

HGTP2N120CND, HGT1S2N120CNDS

Data Sheet January 2000

13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors.This device has the high inputimpedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49313. The Diode used is the development type TA49056 (Part number RHRD4120).

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49311.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTP2N120CND TO-220AB 2N120CND HGT1S2N120CNDS TO-263AB 2N120CND

NOTE: When ordering,use the entire part number.Addthe sufﬁx 9A to obtain the TO-263AB variant in Tape and Reel, i.e., HGT1S2N120CNDS9A.

Symbol

File Number 4681.2

Features

• 13A, 1200V, TC = 25oC

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 360ns at T

• Short Circuit Rating

• Low Conduction Loss

• Thermal Impedance SPICE Model Temperature Compensating SABER™ Model www.intersil.com

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Packaging

JEDEC TO-220AB (ALTERNATE VERSION)

COLLECTOR

(FLANGE)

JEDEC TO-263AB

COLLECTOR (FLANGE)

= 150oC

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

SABER™ is a trademark of Analogy, Inc.

1-888-INTERSIL or 321-724-7143

HGTP2N120CND, HGT1S2N120CNDS

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Speciﬁed

HGTP2N120CND,

HGT1S2N120CNDS UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

1200 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

GES

GEM

13 A

20 A

±20 V ±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 13A at 1200V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

104 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

-55 to 150

C Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

pkg

300 260

8 µs

NOTES:

1. Pulse width limited by maximum junction temperature.

2. V

= 840V, TJ = 125oC, RG = 51Ω.

CE(PK)

Electrical Speciﬁcations T

= 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV Collector to Emitter Leakage Current I

CES

IC = 250µA, VGE = 0V 1200 - - V VCE = BV

CES

TC = 25oC - - 100 µA TC = 125oC - 100 - µA TC = 150oC - - 1.0 mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

= 2.6A,

VGE = 15V IC = 45µA, VCE = V

TC = 25oC - 2.05 2.40 V TC = 150oC - 2.75 3.50 V

VGE = ±20V - - ±250 nA

Switching SOA SSOA TJ = 150oC, RG = 51Ω, VGE = 15V,

Gate to Emitter Plateau Voltage V On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t Turn-On Energy E Turn-Off Energy (Note 3) E Current Turn-On Delay Time t

d(ON)I

Current Rise Time t Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t Turn-On Energy E Turn-Off Energy (Note 3) E

GEP

G(ON)

OFF

L = 5mH, V IC = 2.6A, VCE = 0.5 BV IC = 2.6A,

VCE = 0.5 BV IGBT and Diode at TJ = 25oC,

ICE = 2.6A, VCE = 0.8 BV VGE = 15V, RG= 51Ω, L = 5mH Test Circuit (Figure 20)

IGBT and Diode at TJ = 150oC, ICE = 2.6A, VCE = 0.8 BV VGE = 15V, RG= 51Ω, L = 5mH Test Circuit (Figure 20)

CE(PK)

CES

= 1200V

CES

VGE = 15V - 30 36 nC VGE = 20V - 36 43 nC

6.4 6.7 - V

13 - - A

- 10.2 - V

-2530ns

-1115ns

- 205 220 ns

- 260 320 ns

- 425 590 µJ

- 355 390 µJ

-2125ns

-1115ns

- 225 240 ns

- 360 420 ns

- 800 1100 µJ

- 530 580 µJ

HGTP2N120CND, HGT1S2N120CNDS

Electrical Speciﬁcations T

= 25oC, Unless Otherwise Speciﬁed (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Diode Forward Voltage V Diode Reverse Recovery Time t

IEC = 2.6A - 1.8 2.0 V IEC = 1A, dlEC/dt = 200A/µs - 31 35 ns IEC = 2.6A, dlEC/dt = 200A/µs - 47 52 ns

Thermal Resistance Junction To Case R

θJC

IGBT - - 1.20 Diode - - 2.5

NOTE:

3. Turn-Off Energy Loss (E

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and

OFF

ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Typical Performance Curves Unless Otherwise Speciﬁed

, DC COLLECTOR CURRENT (A)

25 75 100 125 150

TC, CASE TEMPERATURE (oC)

VGE= 15V

TJ= 150oC, RG = 51Ω, VGE= 15V, L = 5mH

, COLLECTOR TO EMITTER CURRENT (A)

, COLLECTOR TO EMITTER VOLTAGE (V)

600 800400200 1000 1200

o o

C/W C/W

1400

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

200

TJ= 150oC, RG = 51Ω, VGE= 15V, L = 5mH

100

= 0.05 / (t

MAX1

= (PD- PC) / (EON + E

MAX2

= CONDUCTION DISSIPATION

, OPERATING FREQUENCY (kHz)

MAX

(DUTY FACTOR = 50%) = 1.2oC/W, SEE NOTES

ØJC

1342

ICE, COLLECTOR TO EMITTER CURRENT (A)

d(OFF)I

+ t

d(ON)I

OFF

) )

110

15V

12V

75oC

15V

12V

FIGURE 3. OPERATINGFREQUENCY vs COLLECTOR TO

EMITTER CURRENT

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

VCE = 840V, RG = 51Ω, TJ= 125oC

, SHORT CIRCUIT WITHSTAND TIME (µs)

10 14 15131211

VGE, GATE TO EMITTER VOLTAGE (V)

, PEAK SHORT CIRCUIT CURRENT (A)

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

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