Intersil Corporation HGTP2N120CND, HGT1S2N120CNDS Datasheet
HGTP2N120CND, HGT1S2N120CNDS
Data Sheet January 2000
13A, 1200V, NPT Series N-Channel IGBTs
with Anti-Parallel Hyperfast Diodes
The HGTP2N120CND and HGT1S2N120CNDS are
Non-Punch Through (NPT) IGBT designs. They are new
members of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and
bipolar transistors.This device has the high inputimpedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The IGBT used is the development type
TA49313. The Diode used is the development type TA49056
(Part number RHRD4120).
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49311.
Ordering Information
PART NUMBER PACKAGE BRAND
HGTP2N120CND TO-220AB 2N120CND
HGT1S2N120CNDS TO-263AB 2N120CND
NOTE: When ordering,use the entire part number.Addthe suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S2N120CNDS9A.
Symbol
C
G
File Number 4681.2
Features
• 13A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 360ns at T
• Short Circuit Rating
• Low Conduction Loss
• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.intersil.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-220AB (ALTERNATE VERSION)
E
COLLECTOR
(FLANGE)
G
E
JEDEC TO-263AB
COLLECTOR
(FLANGE)
C
G
= 150oC
J
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
SABER™ is a trademark of Analogy, Inc.
1-888-INTERSIL or 321-724-7143
| Copyright © Intersil Corporation 2000
HGTP2N120CND, HGT1S2N120CNDS
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
HGTP2N120CND,
HGT1S2N120CNDS UNITS
Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
1200 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
C25
C110
CM
GES
GEM
13 A
7A
20 A
±20 V
±30 V
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 13A at 1200V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
104 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
-55 to 150
o
C
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
SC
300
260
8 µs
o
C
o
C
NOTES:
1. Pulse width limited by maximum junction temperature.
2. V
= 840V, TJ = 125oC, RG = 51Ω.
CE(PK)
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BV
Collector to Emitter Leakage Current I
CES
CES
IC = 250µA, VGE = 0V 1200 - - V
VCE = BV
CES
TC = 25oC - - 100 µA
TC = 125oC - 100 - µA
TC = 150oC - - 1.0 mA
Collector to Emitter Saturation Voltage V
Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I
CE(SAT)IC
GE(TH)
GES
= 2.6A,
VGE = 15V
IC = 45µA, VCE = V
TC = 25oC - 2.05 2.40 V
TC = 150oC - 2.75 3.50 V
GE
VGE = ±20V - - ±250 nA
Switching SOA SSOA TJ = 150oC, RG = 51Ω, VGE = 15V,
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q
Current Turn-On Delay Time t
d(ON)I
Current Rise Time t
Current Turn-Off Delay Time t
d(OFF)I
Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Current Turn-On Delay Time t
d(ON)I
Current Rise Time t
Current Turn-Off Delay Time t
d(OFF)I
Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
GEP
G(ON)
rI
fI
ON
OFF
rI
fI
ON
OFF
L = 5mH, V
IC = 2.6A, VCE = 0.5 BV
IC = 2.6A,
VCE = 0.5 BV
IGBT and Diode at TJ = 25oC,
ICE = 2.6A,
VCE = 0.8 BV
VGE = 15V,
RG= 51Ω,
L = 5mH
Test Circuit (Figure 20)
IGBT and Diode at TJ = 150oC,
ICE = 2.6A,
VCE = 0.8 BV
VGE = 15V,
RG= 51Ω,
L = 5mH
Test Circuit (Figure 20)
CE(PK)
CES
CES
CES
= 1200V
CES
VGE = 15V - 30 36 nC
VGE = 20V - 36 43 nC
,
,
6.4 6.7 - V
13 - - A
- 10.2 - V
-2530ns
-1115ns
- 205 220 ns
- 260 320 ns
- 425 590 µJ
- 355 390 µJ
-2125ns
-1115ns
- 225 240 ns
- 360 420 ns
- 800 1100 µJ
- 530 580 µJ
2
HGTP2N120CND, HGT1S2N120CNDS
Electrical Specifications T
= 25oC, Unless Otherwise Specified (Continued)
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Diode Forward Voltage V
Diode Reverse Recovery Time t
EC
rr
IEC = 2.6A - 1.8 2.0 V
IEC = 1A, dlEC/dt = 200A/µs - 31 35 ns
IEC = 2.6A, dlEC/dt = 200A/µs - 47 52 ns
Thermal Resistance Junction To Case R
θJC
IGBT - - 1.20
Diode - - 2.5
NOTE:
3. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
OFF
ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
14
12
10
8
6
4
, DC COLLECTOR CURRENT (A)
2
CE
I
0
25 75 100 125 150
50
TC, CASE TEMPERATURE (oC)
VGE= 15V
16
TJ= 150oC, RG = 51Ω, VGE= 15V, L = 5mH
14
12
10
8
6
4
2
, COLLECTOR TO EMITTER CURRENT (A)
0
CE
I
0
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
600 800400200 1000 1200
o
o
C/W
C/W
1400
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
200
TJ= 150oC, RG = 51Ω, VGE= 15V, L = 5mH
100
50
f
= 0.05 / (t
MAX1
f
= (PD- PC) / (EON + E
MAX2
P
= CONDUCTION DISSIPATION
C
10
, OPERATING FREQUENCY (kHz)
MAX
f
(DUTY FACTOR = 50%)
= 1.2oC/W, SEE NOTES
R
ØJC
1342
ICE, COLLECTOR TO EMITTER CURRENT (A)
d(OFF)I
+ t
d(ON)I
OFF
)
)
T
110
110
T
V
C
GE
o
15V
C
75
12V
75oC
V
C
GE
o
15V
C
o
12V
C
FIGURE 3. OPERATINGFREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
50
VCE = 840V, RG = 51Ω, TJ= 125oC
40
30
20
I
SC
10
, SHORT CIRCUIT WITHSTAND TIME (µs)
SC
t
0
5
10 14 15131211
VGE, GATE TO EMITTER VOLTAGE (V)
50
40
30
20
t
SC
10
, PEAK SHORT CIRCUIT CURRENT (A)
SC
I
0
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
3
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