Intersil Corporation HGTP20N60C3, HGT1S20N60C3S Datasheet

HGTG20N60C3, HGTP20N60C3,

HGT1S20N60C3S

Data Sheet January 2000

45A, 600V, UFS Series N-Channel IGBT

This family of MOS gated high voltage switching devices
combining the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of
a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25

o

C and 150oC.

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

Formerly developmental type TA49178.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG20N60C3 TO-247 G20N60C3
HGTP20N60C3 TO-220AB G20N60C3
HGT1S20N60C3S TO-263AB G20N60C3

NOTE: Whenordering,use the entirepart number. Add thesuffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S20N60C3S9A.

File Number 4492.2

Features

• 45A, 600V, TC = 25oC

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 108ns at T

• Short Circuit Rating

• Low Conduction Loss

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Packaging

JEDEC STYLE TO-247

E

C

G

COLLECTOR

(FLANGE)

= 150oC

J

Symbol

C

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

JEDEC TO-220AB (ALTERNATE VERSION)

E

C

G

COLLECTOR

(FLANGE)

JEDEC TO-263AB

COLLECTOR

(FLANGE)

G

E

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 2000

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

ALL TYPES UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

600 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

CM

GES

GEM

45 A
20 A

300 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 20A at 600V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

164 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.32 W/oC

Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

ARV
STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

SC
SC

100 mJ

-55 to 150

300
260

4 µs

10 µs

o

C

o

C

o

C

NOTES:

1. Pulse width limited by maximum junction temperature.

2. V

= 360V, TJ = 125oC, RG = 10Ω.

CE(PK)

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

CE(SAT)IC

CES
ECS

CES

IC = 250µA, VGE = 0V 600 - - V
IC = 10mA, VGE = 0V 15 28 - V
VCE = BV

= I

CES

C110

VGE = 15V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

GE(TH)

GES

IC = 250µA, VCE = V
VGE = ±20V - - ±250 nA

Switching SOA SSOA TJ = 150oC, RG =

10Ω, VGE = 15V,

L = 100µH
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 4) E
Turn-On Energy (Note 4) E
Turn-Off Energy (Note 3) E

GEP

G(ON)

rI

fI
ON1
ON2
OFF

ICE = I
ICE = I

VCE = 0.5 BV

, VCE = 0.5 BV

C110
C110

CES

IGBT and Diode at TJ = 25oC
ICE = I

C110

VCE = 0.8 BV

CES

VGE = 15V
RG= 10Ω
L = 1mH
Test Circuit (Figure 17)

TC = 25oC - - 250 µA
TC = 150oC - - 5.0 mA
TC = 25oC - 1.4 1.8 V
TC = 150oC - 1.5 1.9 V

GE

3.4 4.8 6.3 V

VCE = 480V 120 - - A
VCE = 600V 20 - - A

CES

- 8.4 - V
VGE = 15V - 91 110 nC
VGE = 20V - 122 145 nC

-2832ns

-2428ns

- 151 210 ns

-5598ns

- 295 320 µJ

- 500 550 µJ

- 500 700 µJ

2

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 4) E
Turn-On Energy (Note 4) E
Turn-Off Energy (Note 3) E
Thermal Resistance Junction To Case R

rI

fI
ON1
ON2
OFF

θJC

IGBT and Diode at TJ = 150oC
ICE = I

C110

VCE = 0.8 BV

CES

VGE = 15V
RG= 10Ω
L = 1mH
Test Circuit (Figure 17)

-2832ns

-2428ns

- 280 450 ns

- 108 210 ns

- 380 410 µJ

- 1.0 1.1 mJ

- 1.2 1.7 mJ

- - 0.76

NOTES:

3. Turn-OffEnergy Loss (E

) isdefinedas the integralofthe instantaneous powerlossstarting atthetrailing edge of theinputpulse and ending

OFF

at the pointwherethe collector current equals zero(ICE= 0A). Alldevices were tested per JEDECStandardNo.24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E

is the turn-on loss of the IGBT only.E

ON1

ON2

turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 17.

Typical Performance Curves Unless Otherwise Specified

50

40

30

V

= 15V

GE

140

TJ= 150oC, RG = 10Ω, VGE= 15V, L = 100µH

120

100

80

o

C/W

is the

20

10

, DC COLLECTOR CURRENT (A)

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

FIGURE 1. DCCOLLECTORCURRENT vs CASE

TEMPERATURE

TJ= 150oC, RG = 10Ω,

100

T

C

o

75

o

75

o

110
110oC

10

f

MAX1

f

MAX2

= CONDUCTION DISSIPATION

P

C

, OPERATING FREQUENCY (kHz)

MAX

R

f

ØJC

1

2

L = 1mH, V

V

GE

C

15V

C

10V

C

15V
10V

= 0.05 / (t
= (PD- PC) / (E

(DUTY FACTOR = 50%)
= 0.76oC/W, SEE NOTES

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

d(OFF)I

5

+ t

ON2

d(ON)I

+ E

OFF

)

)

CE

= 480V

60

40

20

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

300 400200100 500 600

700

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

14

VCE = 360V, RG = 10Ω, TJ= 125oC

12

10

8

6

4

, SHORT CIRCUIT WITHSTAND TIME (µs)

2

SC

4010 20

t

10 11 12 13 14 15

VGE, GATE TO EMITTER VOLTAGE (V)

I

SC

450

400

350

300

250

200

t

SC

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

150

FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO

EMITTER CURRENT

3

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME