Intersil Corporation HGTP20N35G3VL, HGT1S20N35G3VLS, HGT1S20N35G3VL Datasheet
April 1995
HGTP20N35G3VL,
HGT1S20N35G3VL,
HGT1S20N35G3VLS
20A, 350V N-Channel,
Logic Level, Voltage Clamping IGBTs
Features
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
= 175oC
•T
J
• Ignition Energy Capable
Description
This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active
voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in
ignition circuits. Internal diodes provide ESD protection for
the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit.
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
HGTP20N35G3VL T0-220AB 20N35GVL
HGT1S20N35G3VL T0-262AA 20N35GVL
HGT1S20N35G3VLS T0-263AB 20N35GVL
NOTE: When ordering, use the entire part number. Add the suf fix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S20N35G3VLS9A.
The development type number for this device is TA49076.
Packages
JEDEC TO-220AB
COLLECTOR
(FLANGE)
JEDEC TO-262AA
COLLECTOR
(FLANGE)
JEDEC TO-263AB
GATE
EMITTER
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
GATE
R
1
EMITTER
EMITTER
A
A
M
A
COLLECTOR
GATE
COLLECTOR
GATE
COLLECTOR
(FLANGE)
COLLECTOR
R
2
EMITTER
Absolute Maximum Ratings T
= +25oC, Unless Otherwise Specified
C
HGTP20N35G3VL
HGT1S20N35G3VL
HGT1S20N35G3VLS UNITS
Collector-Emitter Bkdn Voltage At 10mA, R
Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Collector Current Continuous At V
Gate-Emitter-Voltage (Note). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
= 5.0V, TC = +25oC, Figure 7 . . . . . . . . . . . . . I
GE
= 5.0V, TC = +100oC . . . . . . . . . . . . . . . . . . . .I
At V
GE
Inductive Switching Current At L = 2.3mH, T
At L = 2.3mH, T
Collector to Emitter Avalanche Energy At L = 2.3mH, T
Power Dissipation Total At T
Power Dissipation Derating T
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T
= +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
> +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/oC
C
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Electrostatic Voltage at 100pF, 1500Ω. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD 6 KV
NOTE: May be exceeded if I
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
is limited to 10mA.
GEM
= 1kΩ. . . . . . . . . . . . . . . . . . . . . . . BV
GE
= +25o C . . . . . . . . . . . . . . . . . . . . . I
C
= +175oC . . . . . . . . . . . . . . . . . . . . . I
C
= +25oC . . . . . . . . . . . . . . E
C
3-66
CER
ECS
C25
C100
GES
SCIS
SCIS
AS
D
, T
J
STG
L
375 V
24 V
20 A
20 A
±10 V
26 A
18 A
775 mJ
150 W
-40 to +175
260
File Number
o
C
o
C
4006
Specifications HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
Electrical Specifications T
= +25oC, Unless Otherwise Specified
C
PARAMETERS SYMBOL TEST CONDITIONS
Collector-Emitter Breakdown Voltage BV
Collector-Emitter Breakdown Voltage
Gate-Emitter Plateau Voltage V
Gate Charge Q
Collector-Emitter Clamp Bkdn. Voltage BV
Emitter-Collector Breakdown Voltage BV
CES
BV
CER
GEP
G(ON)
CE(CL)IC
ECS
LIMITS
UNITSMIN TYP MAX
IC = 10mA,
TC = +175oC 310 345 380 V
VGE = 0V
TC = +25oC 320 350 380 V
TC = -40oC 320 355 390 V
IC = 10mA
TC = +175oC 300 340 375 V
VGE = 0V
RGE= 1kΩ
TC = +25oC 315 345 375 V
TC = -40oC 315 350 390 V
IC = 10A
TC = +25oC - 3.7 - V
VCE = 12V
IC = 10A
TC = +25oC - 28.7 - nC
VGE = 5V
VCE = 12V
= 10A
TC = +175oC 325 360 395 V
RG = 0Ω
IC = 10mA TC = +25oC2032-V
Collector-Emitter Leakage Current I
Collector-Emitter Saturation Voltage V
Gate-Emitter Threshold Voltage V
CE(SAT)IC
GE(TH)IC
Gate Series Resistance R
Gate-Emitter Resistance R
Gate-Emitter Leakage Current I
Gate-Emitter Breakdown Voltage BV
Current Turn-Off Time-Inductive Load t
D(OFF)I
t
F(OFF)I
Inductive Use Test I
Thermal Resistance R
CES
1
2
GES
GESIGES
+
SCIS
θJC
VCE = 250V TC = +25oC--5µA
VCE = 250V TC = +175oC - - 250 µA
= 10A
TC = +25oC - 1.3 1.6 V
VGE = 4.5V
TC = +175oC - 1.25 1.5 V
IC = 20A
TC = +25oC - 1.6 2.8 V
VGE = 5.0V
TC = +175oC - 1.9 3.5 V
= 1mA
VCE = V
GE
TC = +25oC 1.3 1.8 2.3 V
TC = +25oC - 1.0 - kΩ
TC = +25oC 101725kΩ
VGE = ±10V ±400 ±590 ±1000 µA
= ±2mA ±12 ±14 - V
IC = 10A, RG = 25Ω,
-1530µs
L = 550 H, RL = 26.4Ω, VGE = 5V,
VCL= 300V, TC= +175oC
L = 2.3mH,
TC = +175oC18--A
VG = 5V,
RG = 0Ω
TC = +25oC26--A
- - 1.0
o
C/W
3-67
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