Intersil Corporation HGTP1N120CND, HGT1S1N120CNDS Datasheet

HGTP1N120CND, HGT1S1N120CNDS

Data Sheet January 2000 File Number 4651.1

6.2A, 1200V, NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode

The HGTP1N120CND and the HGT1S1N120CNDS are
Non-Punch Through (NPT) IGBT designs. They are new
members of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and
bipolar transistors.This device has the high inputimpedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor.

The IGBT is development type number TA49317. The diode
used in anti-parallel with the IGBT is the RHRD4120
(TA49056).

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

Formerly developmental type TA49315.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTP1N120CND TO-220AB 1N120CND

Features

• 6.2A, 1200V, TC = 25oC

• 1200V Switching SOA Capability

• Typical E

. . . . . . . . . . . . . . . . . . . 200µJ at TJ = 150oC

OFF

• Short Circuit Rating

• Low Conduction Loss

• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model www.intersil.com/

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

Packaging

JEDEC TO-220AB

E

C

COLLECTOR

(FLANGE)

G

HGT1S1N120CNDS TO-263AB 1N120CND

NOTE: Whenordering, use theentirepart number. Add the suffix9A
to obtain the TO-263AB in tape and reel, e.g.
HGT1S1N120CNDS9A.

Symbol

C

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

G

JEDEC TO-263AB

COLLECTOR

(FLANGE)

E

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 2000

SABER™ is a trademark of Analogy, Inc.

HGTP1N120CND, HGT1S1N120CNDS

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTP1N120CND,

HGT1S1N120CNDS UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

1200 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Average Rectified Forward Current at TC = 148oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .. I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

F(AV)

CM

GES

GEM

6.2 A

3.2 A
4A
6A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 6A at 1200V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

60 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.476 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

-55 to 150

o

C

Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6cm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

Short Circuit Withstand Time (Note 2) at VGE = 13V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

SC
SC

300
260

8 µs

11 µs

o

C

o

C

NOTES:

1. Single Pulse; VGE = 15V; Pulse width limited by maximum junction temperature.

2. V

= 840V, TJ = 125oC, RG = 82Ω.

CE(PK)

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Collector to Emitter Leakage Current I

CES

CES

IC = 250µA, VGE = 0V 1200 - - V
VCE = BV

CES

TC = 25oC - - 250 µA
TC = 125oC - 20 - µA
TC = 150oC - - 1.0 mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

= 1.0A,

VGE = 15V
IC = 50µA, VCE = V

TC = 25oC - 2.05 2.4 V
TC = 150oC - 2.75 3.2 V

GE

VGE = ±20V - - ±250 nA

Switching SOA SSOA TJ = 150oC, RG = 82Ω, VGE = 15V,

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 3) E
Turn-Off Energy (Note 3) E

GEP

G(ON)

rI

fI

ON

OFF

L = 2mH, V
IC = 1.0A, VCE = 0.5 BV
IC = 1.0A,

VCE = 0.5 BV
IGBT and Diode at TJ = 25oC

ICE = 1.0A, VCE = 0.8 BV
VGE = 15V, RG = 82Ω, L = 4mH,
Test Circuit (Figure 20)

CE(PK)

CES

= 1200V

CES

VGE = 15V - 13 19 nC
VGE = 20V - 16 28 nC

CES,

6.0 7.1 - V

6- - A

- 9.7 - V

-1521ns

-1115ns

-6595ns

- 365 450 ns

- 175 195 J

- 140 155 J

2

HGTP1N120CND, HGT1S1N120CNDS

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 3) E
Turn-Off Energy (Note 3) E
Diode Forward Voltage V
Diode Reverse Recovery Time t
Thermal Resistance Junction To Case R

rI

fI

ON

OFF

EC

rr

θJC

IGBT and Diode at TJ = 150oC,
ICE= 1.0 A, VCE= 0.8 BV

CES,

VGE = 15V, RG = 82Ω, L = 4mH,
Test Circuit (Figure 20)

-1320ns

-1118ns

- 75 100 ns

- 465 625 ns

- 385 460 J

- 200 225 J
IEC = 1A - 1.3 1.8 V
IEC = 1A, dIEC/dt = 200A/µs--50ns
IGBT - - 2.1
Diode - - 3

NOTE:

3. Turn-Off Energy Loss (E

) is defined as the integral of the instantaneous power loss starting at the trailing edgeof the inputpulse and ending

OFF

at the point where the collector current equals zero (ICE= 0A). All devices were tested per JEDEC Standard No.24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test methodproduces the true total Turn-Off Energy Loss. Turn-on losses include lossesdue to
diode recovery.

Typical Performance Curves Unless Otherwise Specified

7

6

VGE= 15V

7

TJ= 150oC, RG = 82Ω, VGE= 15V, L = 2mH

6

o
o

C/W
C/W

5

4

3

2

, DC COLLECTOR CURRENT (A)

1

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

FIGURE 1. DCCOLLECTORCURRENT vs CASE

TEMPERATURE

300

TJ= 150oC, RG = 82Ω, L = 4mH, VCE = 960V

200

100

f

MAX1

f

MAX2

P

, OPERATING FREQUENCY (kHz)

MAX

f

C

10

R

θJC

5

0.5

= 0.05 / (t
= (PD- PC) / (EON+ E

= CONDUCTION DISSIPATION

(DUTY FACTOR = 50%)

= 2.1oC/W, SEE NOTES

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

d(OFF)I

+ t

d(ON)I

OFF

)
)

2.01.0

TCV

o

75

o

75

o

110
110oC

5

4

3

2

1

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0

, COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

600 800400200 1000 1200

1400

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

GE

15V

C

13V

C

15V

C

13V

3.0

20

VCE = 840V, RG = 82Ω, TJ= 125oC

18

16

14

12

, SHORT CIRCUIT WITHSTAND TIME (ms)

10

SC

t

13 14 15

t

SC

I

SC

VGE, GATE TO EMITTER VOLTAGE (V)

20

18

16

14

12

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

10

FIGURE 3. OPERATING FREQUENCYvs COLLECTOR TO

EMITTER CURRENT

3

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME