Intersil Corporation HGTP1N120BND, HGT1S1N120BNDS Datasheet

HGTP1N120BND, HGT1S1N120BNDS

Data Sheet January 2000

5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors.This device has the high inputimpedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

The IGBT is development type number TA49316. The diode used in anti-parallel with the IGBT is the RHRD4120 (TA49056).

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49314.

Ordering Information

File Number 4650.2

Features

• 5.3A, 1200V, TC = 25oC

• 1200V Switching SOA Capability

• Typical E

. . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150oC

OFF

• Short Circuit Rating

• Low Conduction Loss

• Temperature Compensating SABER™ Model Thermal Impedance SPICE Model www.intersil.com/

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

Packaging

JEDEC TO-220AB

COLLECTOR

(FLANGE)

PART NUMBER PACKAGE BRAND

HGTP1N120BND TO-220AB 1N120BND HGT1S1N120BNDS TO-263AB 1N120BND

NOTE: When ordering, use the entire part number.Add the suffix 9A to obtain the TO-263AB in tape and reel, i.e. HGT1S1N120BNDS9A.

JEDEC TO-263AB

Symbol

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

COLLECTOR

(FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

SABER™ is a trademark of Analogy, Inc.

HGTP1N120BND, HGT1S1N120BNDS

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Speciﬁed

ALL TYPES UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

CES

1200 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Average Rectiﬁed Forward Current at TC = 148oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

F(AV)

GES

GEM

5.3 A

2.7 A 4A 6A

±20 V ±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 6A at 1200V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

60 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.476 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

-55 to 150

Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

Short Circuit Withstand Time (Note 2) at VGE = 13V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

pkg

SC SC

300 260

8 µs

13 µs

NOTES:

1. Single Pulse; VGE = 15V; Pulse width limited by maximum junction temperature.

2. V

= 840V, TJ = 125oC, RG = 82Ω.

CE(PK)

Electrical Speciﬁcations T

= 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV Collector to Emitter Leakage Current I

CES

IC = 250µA, VGE = 0V 1200 - - V VCE = BV

CES

TC = 25oC - - 250 µA TC = 125oC - 20 - µA TC = 150oC - - 1.0 mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

= 1.0A

VGE = 15V IC = 50µA, VCE = V

TC = 25oC - 2.5 2.9 V TC = 150oC - 3.8 4.3 V

VGE = ±20V - - ±250 nA

Switching SOA SSOA TJ = 150oC, RG = 82Ω, VGE = 15V,

Gate to Emitter Plateau Voltage V On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t Turn-On Energy E Turn-Off Energy (Note 3) E

GEP

G(ON)

OFF

L = 2mH, V IC = 1.0A, VCE = 0.5 BV IC = 1.0A,

VCE = 0.5 BV IGBT and Diode at TJ = 25oC

ICE = 1.0A VCE = 0.8 BV VGE = 15V RG = 82Ω L = 4mH Test Circuit (Figure 20)

CE(PK)

CES

= 1200V

CES

VGE = 15V - 14 20 nC VGE = 20V - 15 21 nC

6.0 7.1 - V

6- - A

- 9.2 - V

-1520ns

-1114ns

-6776ns

- 226 300 ns

- 172 187 J

- 90 123 J

HGTP1N120BND, HGT1S1N120BNDS

Electrical Speciﬁcations T

= 25oC, Unless Otherwise Speciﬁed (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t Turn-On Energy E Turn-Off Energy (Note 3) E Diode Forward Voltage V Diode Reverse Recovery Time t Thermal Resistance Junction To Case R

OFF

θJC

IGBT and Diode at TJ = 150oC ICE = 1.0A VCE = 0.8 BV

CES

VGE = 15V RG = 82Ω L = 4mH Test Circuit (Figure 20)

-1317ns

-1115ns

-7588ns

- 258 370 ns

- 385 440 J

- 120 175 J IEC = 1.0A - 1.3 1.8 V IEC = 1.0A, dIEC/dt = 200A/µs--50ns IGBT - - 2.1 Diode - - 3

NOTE:

3. Turn-Off Energy Loss (E

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and

OFF

ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-on losses include losses due to diode recovery.

Typical Performance Curves Unless Otherwise Speciﬁed

, DC COLLECTOR CURRENT (A)

25 75 100 125 150

TC, CASE TEMPERATURE (oC)

VGE= 15V

TJ= 150oC, RG = 82Ω, VGE= 15V, L = 2mH

, COLLECTOR TO EMITTER CURRENT (A)

, COLLECTOR TO EMITTER VOLTAGE (V)

600 800400200 1000 1200

o o

C/W C/W

1400

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

300

TJ= 150oC, RG = 82Ω, L = 4mH, VCE = 960V

200

100

= 0.05 / (t

MAX1

= (PD- PC) / (EON + E

MAX2

PC = CONDUCTION DISSIPATION

, OPERATING FREQUENCY (kHz)

MAX

(DUTY FACTOR = 50%)

= 2.1oC/W, SEE NOTES

ØJC

0.5 , COLLECTOR TO EMITTER CURRENT (A)

d(OFF)I

+ t

d(ON)I

OFF

) )

110 110oC

2.01.0

15V

13V

15V

13V

FIGURE 3. OPERATINGFREQUENCY vs COLLECTOR TO

EMITTER CURRENT

3.0

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

VCE = 840V, RG = 82, TJ= 125oC

, SHORT CIRCUIT WITHSTAND TIME (µs)

13 14 14.5 15

13.5

VGE, GATE TO EMITTER VOLTAGE (V)

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

, PEAK SHORT CIRCUIT CURRENT (A)

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