Intersil Corporation HGTP15N120C3, HGTG15N120C3, HGT1S15N120C3S Datasheet

HGTG15N120C3, HGTP15N120C3,

HGT1S15N120C3, HGT1S15N120C3S

June 1997

Features

• 35A, 1200V, TC = 25oC

• 1200V Switching SOA Capability

• Typical Fall Time . . . . . . . . . . . . . . 350ns at T

= 150oC

J

• Short Circuit Rating

• Low Conduction Loss

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG15N120C3 TO-247 15N120C3
HGTP15N120C3 TO-220AB 15N120C3
HGT1S15N120C3 TO-262AA 15N120C3
HGT1S15N120C3S TO-263AB 15N120C3

NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263 variant in tape and reel; i.e.,
HGT1S15N120C3S9A.

Formerly Developmental Type TA49145.

35A, 1200V, UFS Series N-Channel IGBTs

Description

The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3
and HGT1S15N120C3S are MOS gated high voltage switching
devices combining the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar tran­sistor. The much low er on-state voltage drop v aries only moder­ately between 25

The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction
losses are essential, such as: AC and DC motor controls,
power supplies and drivers for solenoids , rela ys and contactors.

Symbol

o

C and 150oC.

G

C

E

Packa ging

JEDEC STYLE TO-247 JEDEC TO-220AB (ALTERNATE VERSION)

EMITTER

COLLECTOR

GATE

COLLECTOR

COLLECTOR
(FLANGE)

JEDEC TO-262AA JEDEC TO-263AB

EMITTER

COLLECTOR

GATE

A

COLLECTOR
(FLANGE)

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027

(FLANGE)

GATE

EMITTER

EMITTER

COLLECTOR

GATE

A

M

A

COLLECTOR

(FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

1

File Number

4244.3

HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTG15N120C3, HGTP15N120C3,

HGT1S15N120C3S, HGT1S15N120C3S UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

1200 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

CM

GES

GEM

35 A
15 A

120 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC, Figure 14 . . . . . . . . . . . . . . SSOA 15A at 1200V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

164 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.32 W/oC

Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . TJ, T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . t

Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

ARV
STG

L
SC
SC

100 mJ

-55 to 150
260

6 µs

25 µs

o

C

o

C

NOTES:

1. Pulse width limited by maximum junction temperature.

2. V

= 720V, TJ = 125oC, RGE = 25Ω.

CE(PK)

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

CESIC
ECSIC

CES

= 250µA, VGE = 0V 1200 - - V
= 10mA, VGE= 0V 15 25 - V

VCE = BV

CES

TC = 25oC - - 250 µA
TC = 150oC - - 3.0 mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)IC

GES

Switching SOA SSOA TJ = 150oC, RG = 10Ω

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Thermal Resistance R

GEP

g(ON)IC

d(ON)I

rI

d(OFF)I

fI

ON

OFF

θJC

= I

,

C110

VGE = 15V

= 250µA, VCE = V

TC = 25oC - 2.3 3.5 V
TC = 150oC - 2.4 3.2 V

GE

4.0 5.6 7.5 V

VGE = ±20V - - ±100 nA

VGE = 15V, L = 1mH
IC = I

VCE = 0.5 BV

= I

C110
C110

, VCE = 0.5 BV
,

ES

TJ = 150oC
ICE = I

C110

V

CE(PK)

= 0.8 BV

CES

VGE = 15V
RG = 10Ω
L = 1mH

V
V

CES

VGE = 15V - 75 100 nC
VGE = 20V - 100 130 nC

= 960V 40 - - A

CE(PK)

= 1200V 15 - - A

CE(PK)

- 8.8 - V

-17-ns

-25-ns

- 470 550 ns

- 350 400 ns

- 2100 - µJ

- 4700 - µJ

- - 0.76oC/W

NOTE:

3. Turn-Off Energy Loss (E

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and

OFF

ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses
include losses due to diode recovery.

2

HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S

Typical Performance Curves

100

DUTY CYCLE <0.5%, VCE = 10V
PULSE DURATION = 250µs

80

60

40

20

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

6

V

GE

FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS

25

PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V

20

15

10

TC = 25oC

TC = 150oC

TC = -55oC

TC = 25oC

10 14

, GATE TO EMITTER VOLTAGE (V)

= 10V

GE

128

TC = 150oC

80

DUTY CYCLE <0.5%, TC = 25oC
PULSE DURATION = 250µs

60

40

20

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

010

100

PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V

80

60

40

268

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

4

GE

= 15V

VGE = 15V

12V
10V

9V

8.5V
8V

TC = 25oC

TC = 150oC

5

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

0610

, COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

428

20

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

02 68

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

4

FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE

35

30

25

20

15

10

, DC COLLECTOR CURRENT (A)

5

CE

I

0

25 50 75 100 125 150

V

= 15V

GE

TC, CASE TEMPERATURE (oC)

35

VCE = 720V, RGE = 25Ω, TJ = 125oC

30

25

20

15

, SHORT CIRCUIT WITHSTAND TIME (µs)

SC

t

10

10

11 12

V

, GATE TO EMITTER VOLTAGE (V)

GE

I

SC

t

SC

13

14 15

150

125

100

75

50

25

10

, PEAK SHORT CIRCUIT CURRENT(A)

SC

I

FIGURE 5. DC COLLECTOR CURRENT AS A FUNCTION OF

CASE TEMPERATURE

FIGURE 6. SHORT CIRCUIT WITHSTAND TIME

3

HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S

Typical Performance Curves

100

TJ = 150oC, RG = 10Ω, L = 1mH, V

50

30

20

, TURN-ON DELAY TIME (ns)

d(ON)I

t

10

5101520

I

, COLLECTOR TO EMITTER CURRENT (A)

CE

CE(PK)

(Continued)

= 960V

VGE = 10V

VGE = 15V

FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF

COLLECTOR TO EMITTER CURRENT

300

TJ = 150oC, RG = 10Ω, L = 1mH, V

100

CE(PK)

= 960V

VGE = 10V

VGE = 15V

600

25

TJ = 150oC, RG = 10Ω, L = 1mH, V

500

400

VGE = 10V or 15V

300

200

, TURN-OFF DELAY TIME (ns)

d(OFF)I

t

100

510152025

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

CE(PK)

FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF

COLLECTOR TO EMITTER CURRENT

500

TJ = 150oC, RG = 10Ω, L = 1mH, V

400

VGE = 10V

300

CE(PK)

= 960V

30

= 960V

VGE = 15V

10

, TURN-ON RISE TIME (ns)

rI

t

1

510152025

ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF

COLLECTOR TO EMITTER CURRENT

10

TJ = 150oC, RG = 10Ω, L = 1mH, V

8

6

4

2

, TURN-ON ENERGY LOSS (mJ)

ON

E

0

5101520

ICE, COLLECTOR TO EMITTER CURRENT (A)

CE(PK)

= 960V

VGE= 10V

VGE= 15V

25

200

, FALL TIME (ns)

fI

t

100

5 1015202530

ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF

COLLECTOR TO EMITTER CURRENT

16

TJ = 150oC, RG = 10Ω, L = 1mH, V

14

12

10

8

6

4

, TURN-OFF ENERGY LOSS (mJ)

2

OFF

E

0

5 1015202530

ICE, COLLECTOR TO EMITTER CURRENT (A)

VGE= 10V

CE(PK)

= 960V

VGE= 15V

FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF

COLLECTOR TO EMITTER CURRENT

FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF

COLLECTOR TO EMITTER CURRENT

4