Intersil Corporation HGT1S14N36G3VLS, HGT1S14N36G3VL Datasheet
June 1995
HGTP14N36G3VL,
HGT1S14N36G3VL,
HGT1S14N36G3VLS
14A, 360V N-Channel,
Logic Level, Voltage Clamping IGBTs
Features
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
= 175oC
•T
J
• Ignition Energy Capable
Description
This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active
voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in
ignition circuits. Internal diodes provide ESD protection for
the logic level gate. Both a series resistor and a shunt
resister are provided in the gate circuit.
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
HGTP14N36G3VL TO-220AB 14N36GVL
HGT1S14N36G3VL TO-262AA 14N36GVL
HGT1S14N36G3VLS TO-263AB 14N36GVL
NOTE: When ordering, use the entire part number. Add the suf fix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S14N36G3VLS9A.
The development type number for this device is TA49021.
Packages
JEDEC TO-220AB
COLLECTOR
(FLANGE)
JEDEC TO-262AA
COLLECTOR
(FLANGE)
JEDEC TO-263AB
GATE
EMITTER
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
GATE
EMITTER
COLLECTOR
GATE
EMITTER
COLLECTOR
GATE
A
A
M
A
R
1
COLLECTOR
(FLANGE)
COLLECTOR
R
2
EMITTER
Absolute Maximum Ratings T
= +25oC, Unless Otherwise Specified
C
HGTP14N36G3VL,
HGT1S14N36G3VL,
HGT1S14N36G3VLS UNITS
Collector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Collector Current Continuous at V
Gate-Emitter Voltage (Note). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Inductive Switching Current at L = 2.3mH, T
at L = 2.3mH, T
Collector to Emitter Avalanche Energy at L = 2.3mH, T
Power Dissipation Total at T
Power Dissipation Derating T
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T
= 5V, TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . I
GE
= 5V, TC = +100oC. . . . . . . . . . . . . . . . . . . . . .I
at V
GE
= +25oC . . . . . . . . . . . . . . . . . . . . . . .I
C
= + 175oC . . . . . . . . . . . . . . . . . . . . . .I
C
= +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
> +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.67 W/oC
C
= +25oC. . . . . . . . . . . . . . . E
C
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Electrostatic Voltage at 100pF, 1500Ω. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD 6 KV
NOTE: May be exceeded if I
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
is limited to 10mA.
GEM
| Copyright © Intersil Corporation 1999
3-55
CER
ECS
C25
C100
GEM
SCIS
SCIS
AS
D
, T
J
STG
L
390 V
24 V
18 A
14 A
±10 V
17 A
12 A
332 mJ
100 W
-40 to +175
260
File Number
o
C
o
C
4008
Specifications HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Electrical Specifications T
= +25oC, Unless Otherwise Specified
C
PARAMETERS SYMBOL TEST CONDITIONS
Collector-Emitter Breakdown Voltage BV
Gate-Emitter Plateau Voltage V
Gate Charge Q
Collector-Emitter Clamp Breakdown
Voltage
Emitter-Collector Breakdown Voltage BV
Collector-Emitter Leakage Current I
Collector-Emitter Saturation Voltage V
CER
GEP
G(ON)IC
BV
CE(CL)IC
ECS
CER
CE(SAT)IC
LIMITS
UNITSMIN TYP MAX
IC = 10mA,
TC = +175oC 320 355 400 V
VGE = 0V
RGE = 1kΩ
TC = +25oC 330 360 390 V
TC = -40oC 320 350 385 V
IC = 7A,
TC = +25oC - 2.7 - V
VCE = 12V
= 7A,
TC = +25oC - 24 - nC
VCE = 12V
= 7A
TC = +175oC 350 380 410 V
RG = 1000Ω
IC = 10mA TC = +25oC2428-V
VCE = 250V
TC = +25oC-- 25µA
RGE = 1kΩ
TC = +175oC - - 250 µA
= 7A
TC = +25oC - 1.25 1.45 V
VGE = 4.5V
TC = +175oC - 1.15 1.6 V
Gate-Emitter Threshold Voltage V
GE(TH)IC
Gate Series Resistance R
Gate-Emitter Resistance R
Gate-Emitter Leakage Current I
Gate-Emitter Breakdown Voltage BV
Current Turn-Off Time-Inductive Load t
D(OFF)I
t
F(OFF)I
Inductive Use Test I
Thermal Resistance R
GES
GES
SCIS
θJC
IC = 14A
TC = +25oC - 1.6 2.2 V
VGE = 5V
TC = +175oC - 1.7 2.9 V
= 1mA
VCE = V
GE
1
2
TC = +25oC 1.3 1.8 2.2 V
TC = +25oC - 75 - Ω
TC = +25oC 102030kΩ
VGE = ±10V ±330 ±500 ±1000 µA
I
= ±2mA ±12 ±14 - V
GES
+
IC = 7A, RL = 28Ω
-7-µs
RG = 25Ω, L = 550µH,
VCL = 300V, VGE = 5V,
TC = +175oC
L = 2.3mH,
TC = +175oC12--A
VG = 5V,
TC = +25oC17--A
- - 1.5
o
C/W
3-56
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