Intersil Corporation HGTP12N60C3, HGT1S12N60C3S Datasheet
HGTP12N60C3, HGT1S12N60C3S
Data Sheet January 2000
24A, 600V, UFS Series N-Channel IGBTs
The HGTP12N60C3 and HGT1S12N60C3S are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have
the high inputimpedanceof a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25
and 150
o
C.
o
C
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49123.
Ordering Information
PART NUMBER PACKAGE BRAND
HGTP12N60C3 TO-220AB P12N60C3
HGT1S12N60C3S TO-263AB S12N60C3
NOTE: When ordering,use the entire part number.Addthe suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S12N60C3S9A.
Symbol
C
File Number 4040.4
Features
• 24A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 230ns at T
• Short Circuit Rating
• Low Conduction Loss
Packaging
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
JEDEC TO-263AB
COLLECTOR
GATE
EMITTER
(FLANGE)
= 150oC
J
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
| Copyright © Intersil Corporation 2000
HGTP12N60C3, HGT1S12N60C3S
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
HGTP12N60C3, HGT1S12N60C3S UNITS
Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
600 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
C25
C110
CM
GES
GEM
24 A
12 A
96 A
±20 V
±30 V
Switching Safe Operating Area at TJ = 150oC (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA 24A at 600V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
104 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/oC
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
ARV
STG
L
SC
SC
100 mJ
-40 to 150
260
4 µs
13 µs
o
C
o
C
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
Electrical Specifications T
= 360V, TJ = 125oC, RG = 25Ω.
CE(PK)
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BV
Emitter-Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I
Collector to Emitter Saturation Voltage V
Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I
CES
ECS
CES
CE(SAT)IC
GE(TH)
GES
Switching SOA SSOA TJ = 150oC
IC = 250µA, VGE = 0V 600 - - V
IC = 10mA, VGE= 0V 24 30 - V
VCE = BV
VCE = BV
= I
C110
VGE = 15V
IC = 250µA,
VCE = V
GE
CES
CES
,
TC = 25oC - - 250 µA
TC = 150oC - - 1.0 mA
TC = 25oC - 1.65 2.0 V
TC = 150oC - 1.85 2.2 V
TC = 25oC 3.0 5.0 6.0 V
VGE = ±20V - - ±100 nA
RG = 25Ω
VGE = 15V
V
V
= 480V 80 - - A
CE(PK)
= 600V 24 - - A
CE(PK)
L = 100µH
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q
Current Turn-On Delay Time t
d(ON)I
Current Rise Time t
Current Turn-Off Delay Time t
d(OFF)I
Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Thermal Resistance R
GEP
G(ON)
rI
fI
ON
OFF
θJC
IC = I
IC = I
, VCE = 0.5 BV
C110
,
C110
VCE = 0.5 BV
TJ = 150oC,
ICE = I
C110,
V
= 0.8 BV
CE(PK)
VGE = 15V,
RG = 25Ω,
L = 100µH
CES
- 7.6 - V
VGE = 15V - 48 55 nC
CES
VGE = 20V - 62 71 nC
-14-ns
-16-ns
CES,
- 270 400 ns
- 210 275 ns
- 380 - µJ
- 900 - µJ
- - 1.2
o
C/W
NOTE:
3. Turn-OffEnergy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailingedge of theinput pulse and ending
OFF
at the point where the collector current equals zero (ICE = 0A). The HGTP12N60C3 and HGT1S12N60C3S were tested per JEDEC standard
No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Turn-On losses include diode losses.
2
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