Intersil Corporation HGTP12N60C3D, HGT1S12N60C3DS Datasheet

HGTP12N60C3D, HGT1S12N60C3DS

Data Sheet January 2000

24A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diodes

This family of MOS gated high voltage switching devices
combine the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25

o

C and 150oC. The IGBT used is the
development type TA49123. The diode used in anti-parallel
with the IGBT is the development type TA49188.

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential.

Formerly Developmental Type TA49182.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTP12N60C3D TO-220AB 12N60C3D
HGT1S12N60C3DS TO-263AB 12N60C3D

NOTE: Whenordering, use the entire part number.Addthe suffix 9A
to obtain the TO-263 variant in Tape and Reel, i.e.,
HGT1S12N60C3DS9A.

Symbol

C

Features

• 24A, 600V at TC = 25oC

• Typical Fall Time at T

= 150oC . . . . . . . . . . . . . . . .210ns

J

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

Packaging

JEDEC TO-220AB

COLLECTOR

(FLANGE)

JEDEC TO-263AB

G

E

File Number 4261.1

E

C

G

COLLECTOR

(FLANGE)

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 2000

HGTP12N60C3D, HGT1S12N60C3DS

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

ALL TYPES UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

600 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Average Diode Forward Current at 110oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

(AVG)

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

CM

GES

GEM

24 A
12 A
12 A
96 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA 24A at 600V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

D

104 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

STG

L
SC
SC

-40 to 150
260

4 µs

13 µs

o

C

o

C

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. V

Electrical Specifications T

= 360V, TJ = 125oC, RG = 25Ω.

CE(PK)

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Collector to Emitter Leakage Current I

CESIC

CES

= 250µA, VGE = 0V 600 - - V

VCE = BV

CES

TC = 25oC - - 250 µA
TC = 150oC - - 2.0 mA

Collector to Emitter Saturation Voltage V

CE(SAT)IC

= I

, VGE = 15V TC = 25oC - 1.65 2.0 V

C110

TC = 150oC - 1.85 2.2 V

IC = 15A, VGE = 15V TC = 25oC - 1.80 2.2 V

TC = 150oC - 2.0 2.4 V
Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

GE(TH)IC

GES

Switching SOA SSOA TJ = 150oC,

= 250µA, VCE = V

GE

3.0 5.0 6.0 V

VGE = ±20V - - ±100 nA

VGE= 15V,
RG = 25Ω,

V

V

= 480V 80 - - A

CE(PK)

= 600V 24 - - A

CE(PK)

L = 100µH
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Diode Forward Voltage V

GEPIC

g(ON)IC

ri

fi

ON

OFF

EC

= I

, VCE = 0.5 BV

C110

= I

,

C110

VCE = 0.5 BV

TJ = 150oC,

ICE = I

C110,

V

= 0.8 BV

CE(PK)

VGE = 15V,

CES

CES

VGE = 15V - 48 55 nC
VGE = 20V - 62 71 nC

CES,

- 7.6 - V

-28-ns

-20-ns

- 270 400 ns

RG= 25Ω,

L = 100µH

- 210 275 ns

- 380 - µJ

- 900 - µJ

IEC = 12A - 1.7 2.1 V

2

HGTP12N60C3D, HGT1S12N60C3DS

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Diode Reverse Recovery Time t

IEC= 12A, dIEC/dt = 200A/µs - 32 40 ns

rr

IEC = 1.0A, dIEC/dt = 200A/µs - 23 30 ns
Thermal Resistance R

θJC

IGBT - - 1.2

Diode - - 1.9

NOTE:

3. Turn-OffEnergy Loss(E

) is defined as the integralof theinstantaneous power loss starting at the trailingedge ofthe inputpulse, and ending

OFF

at the point where the collector current equals zero (ICE = 0A). This family of devices was tested per JEDEC Standard No. 24-1 Method for
Measurement of Power DeviceTurn-Off SwitchingLoss. This test method producesthe truetotal Turn-Off Energy Loss. Turn-Onlosses include
losses due to diode recovery.

Typical Performance Curves

80

DUTY CYCLE <0.5%, V
PULSE DURATION = 250µs

70

60

50

TC = 150oC

40

TC = 25oC

30

TC = -40oC

20

10

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

4

6 8 10 12

VGE, GATE TO EMITTER VOLTAGE (V)

CE

= 10V

14

PULSE DURATION = 250µs, DUTY CYCLE <0.5%, T

80

70

60

50

40

30

20

10

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

0246810

I

VGE= 15.0V

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

12.0V

7.0V

o
o

= 25oC

C

10.0V

C/W
C/W

9.0V

8.5V

8.0V

7.5V

FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS

80

PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V

70

60

50

40

30

20

10

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

012345

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

= 10V

GE

TC = -40oC

TC = 150oC

TC = 25oC

80

PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 15V

70

60

50

40

30

20

10

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

012345

, COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

TC = -40oC

TC = 25oC

TC = 150oC

FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE

3