Intersil Corporation HGTP12N60B3, HGT1S12N60B3S Datasheet

HGTP12N60B3, HGT1S12N60B3S

Data Sheet January 2000

27A, 600V, UFS Series N-Channel IGBTs

The HGTP12N60B3 and HGT1S12N60B3S are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have
the highinput impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25
and 150

o

C.

o

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

Formerly developmental type TA49171.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTP12N60B3 TO-220AB G12N60B3

File Number 4410.2

Features

• 27A, 600V, TC = 25oC

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 112ns at T

C

• Short Circuit Rating

= 150oC

J

• Low Conduction Loss

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Packaging

JEDEC TO-220AB

E

C

COLLECTOR

(FLANGE)

G

HGT1S12N60B3S TO-263AB G12N60B3

NOTE: When ordering, use the entire part number.Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, e.g.,
HGT1S12N60B3S9A.

Symbol

C

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

G

JEDEC TO-263AB

COLLECTOR
(FLANGE)

E

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 2000

HGTP12N60B3, HGT1S12N60B3S

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTP12N60B3, HGT1S12N60B3S UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

Collector Current Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

CES

C25

C110

CM

GES

GEM

600 V

27 A
12 A

110 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 96A at 600V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

104 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/oC

Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . .TJ,T

ARV
STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

SC
SC

100 mJ

-55 to 150

300
260

5 µs

10 µs

o

C

o

C

o

C

NOTES:

1. Pulse width limited by maximum junction temperature.

2. V

= 360V, TJ = 125oC, RG = 25Ω.

CE(PK)

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

CES
ECS

CES

IC = 250µA, VGE = 0V 600 - - V
IC = 10mA, VGE= 0V 20 28 - V
VCE = BV

CES

TC = 25oC - - 250 µA
TC = 150oC - - 2.0 mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

= I

,

C110

VGE = 15V

IC = 250µA, VCE = V

TC = 25oC - 1.6 2.1 V
TC = 150oC - 1.7 2.5 V

GE

VGE = ±20V - - ±250 nA

Switching SOA SSOA TJ = 150oC, RG = 25Ω,VGE = 15V

L = 100µH, VCE= 600V
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 4) E
Turn-On Energy (Note 4) E
Turn-Off Energy (Note 3) E

GEP

g(ON)

rI

fI
ON1
ON2
OFF

IC = I
IC = I

VCE = 0.5 BV

, VCE = 0.5 BV

C110

,

C110

CES

VGE = 15V - 51 60 nC

CES

VGE = 20V - 68 78 nC

IGBT and Diode at TJ = 25oC
ICE = I

C110

VCE = 0.8 BV

CES

VGE = 15V
RG= 25Ω
L = 1mH
Test Circuit (Figure 17)

4.5 4.9 6.0 V

96 - - A

- 7.3 - V

-26- ns

-23- ns

- 150 - ns

-62- ns

- 150 - µJ

- 304 350 µJ

- 250 350 µJ

2

HGTP12N60B3, HGT1S12N60B3S

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 4) E
Turn-On Energy (Note 4) E
Turn-Off Energy (Note 3) E
Thermal Resistance Junction To Case R

rI

fI
ON1
ON2
OFF

θJC

IGBT and Diode at TJ = 150oC
ICE = I

C110

VCE = 0.8 BV

CES

VGE = 15V
RG= 25Ω
L = 1mH
Test Circuit (Figure 17)

-22- ns

-23- ns

- 280 295 ns

- 112 175 ns

- 165 - µJ

- 500 525 µJ

- 660 800 µJ

- - 1.2

NOTES:

3. Turn-OffEnergyLoss(E

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

OFF

at the point where the collector current equals zero (ICE= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E

is the turn-on loss of the IGBT only. E

ON1

is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJas the IGBT. The diode type is specified in
Figure 17.

Typical Performance Curves Unless Otherwise Specified

30

25

20

15

10

, DC COLLECTOR CURRENT (A)

5

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

V

GE

= 15V

100

90

TJ= 150oC, RG = 25Ω, VGE= 15V, L = 100µH

80
70
60
50
40
30
20
10

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

300 400200100 500 600

o

C/W

ON2

700

FIGURE 1. DC COLLECTORCURRENT vs CASE

TEMPERATURE

3

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA