Intersil Corporation HFA3135, HFA3134 Datasheet

HFA3134, HFA3135

Data Sheet February 1998 File Number 4445

Ultra High Frequency Matched Pair
Transistors

The HFA3134 and HFA3135 are Ultra High Frequency
Transistorpairs that are fabricated with Intersil Corporation’s
complementary bipolar UHF-1X process. The NPN
transistors exhibit an f
have an f

of 7GHz. Both types exhibit low noise, making

T

of 8.5GHz, while the PNP transistors

T

them ideal for high frequency amplifier and mixer
applications.

Both arraysare matched high frequency transistorpairs.The
matching simplifies DC bias problems and it minimizes
imbalances in differential amplifier configurations. Their high
f

enables the design of UHF amplifiers which exhibit

T

exceptional stability.

Ordering Information

PART NUMBER

(BRAND)

HFA3134IH96
(H04)

HFA3135IH96
(H05)

TEMP.

RANGE (oC) PACKAGE

-40 to 85 6 Ld SOT23 P6.064

-40 to 85 6 Ld SOT23 P6.064

PKG.

NO.

Features

• NPN Transistor (fT). . . . . . . . . . . . . . . . . . . . . . . . .8.5GHz

• NPN Current Gain (h

). . . . . . . . . . . . . . . . . . . . . . . .100

FE

• NPN Noise Figure (50Ω) at 1.0GHz. . . . . . . . . . . . . 2.6dB

• PNP Transistor (f

• PNP Current Gain (h

). . . . . . . . . . . . . . . . . . . . . . . . . . 7GHz

T

). . . . . . . . . . . . . . . . . . . . . . . . .57

FE

• PNP Noise Figure (50Ω) at 900MHz . . . . . . . . . . . . 4.6dB

• Small Package (EIAJ-SC74 Compliant). . . . . . . SOT23-6

Applications

• VHF/UHF Amplifiers

• VHF/UHF Mixers

• IF Converters

• Synchronous Detectors

Pinouts

TOP VIEW

1

2

3

HFA3134

(SOT23)

Q

Q

2

HFA3135

(SOT23)

TOP VIEW

6

1

5

4

1

2

Q

3

6

Q

1

5

4

2

4-450

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 1999

HFA3134, HFA3135

Absolute Maximum Ratings Thermal Information

Collector to Emitter Voltage (RB ≤ 10kΩ to GND) . . . . . . . . . . . .11V

Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . .12V

Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 4.5V

Collector Current . . . . . . . . . . . . . . . . . . . . . . . .14mA at TJ=150oC

26mA at TJ=125oC

Base Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.7mA

ESD Rating

Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .400V

(Per MIL-STD-883 Method 3015.7)

Operating Conditions

Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. θJA is measured with the component mounted on an evaluation PC board in free air.

2. If a transistor is used in a diode configuration, the collector must be connected to the base to avoid exceeding the maximum base current spec­ification.

Thermal Resistance (Typical, Note 1) θJA (oC/W)

SOT23-6 Package . . . . . . . . . . . . . . . . . . . . . . . . . . 350

Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . .175oC

Maximum Junction Temperature (Plastic Package) . . . . . . . .150oC

Maximum Storage Temperature Range. . . . . . . . . . -65oC to 150oC

Maximum Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . .300oC

(Soldering 10s, Lead Tips Only)

Electrical Specifications T

= 25oC

A

TEST

LEVEL

PARAMETER SYMBOL TEST CONDITIONS

(NOTE 3) MIN TYP MAX UNITS

DC CHARACTERISTICS FOR HFA3134 (NPN)

Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V

Emitter-to-Base Breakdown Voltage (Note 4) V
Collector-Cutoff-Current I
Collector-Cutoff-Current I
Emitter-Cutoff-Current (Note 5) I

(BR)CBOIC
(BR)CEOIC

V

(BR)CERIC

(BR)EBOIE
CEO
CBO
EBO

= 10µA, IE = 0 A 12 21 - V
= 100µA, IB = 0 A 4 9 - V
= 100µA, RB= 10kΩ A1117-V

= 10µA, IC = 0 B - 6 - V
VCE = 6V, IB = 0 A -5 - 5 nA
VCB = 8V, IE = 0 A -5 - 5 nA
VEB = 1V, IC = 0 B - 1 - pA

Collector-to-Collector Leakage C - 1 - nA
Collector-to-Emitter Saturation Voltage V
Base-to-Emitter Voltage (Note 5) V
Q1 to Q2 Base-to-Emitter Voltage Match

(Note 5)

CE(SAT)IC
BE

∆V

BE

= 10mA, IB = 1mA A - 95 250 mV
IC = 10mA, VCE = 2V A - 780 1000 mV
IC = 10mA, VCE = 2V A - 1.2 6 mV
IC = 1mA, VCE = 2V A - 1.0 6 mV
IC = 0.1mA, VCE = 2V A - 0.7 6 mV

Base-to-Emitter Voltage Drift IC = 10mA C - -1.5 - mV/oC
DC Forward-Current Transfer Ratio

(Note 5)

h

FE

IC = 10mA, VCE = 2V A 48 80 200
IC = 1mA, VCE = 2V A 48 87 200
IC = 0.1mA, VCE = 2V A 48 90 200
IC = 10mA, VCE = 5V A 48 96 200
IC = 1mA, VCE = 5V A 48 96 200
IC = 0.1mA, VCE = 5V A 48 100 200

Q1 to Q2 Current Transfer Ratio Match ∆h

FE

1mA ≤ IC≤ 10mA,

A-28%

1V ≤ VCE≤ 5V

Early Voltage V

A

IC = 1mA, ∆VCE = 3V A 20 30 - V

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