intersil HFA3046, HFA3096, HFA3127, HFA3128 DATA SHEET

®

HFA3046, HFA3096, HFA3127, HFA3128

Data Sheet

Ultra High Frequency Transistor Arrays

The HFA3046, HFA3096, HFA3127 and the HFA3128 are
Ultra High Frequency Transistor Arrays that are fabricated
from Intersil Corporation’s complementary bipolar UHF-1
process. Each array consists of five dielectrically isolated
transistors on a common monolithic substrate. The NPN
transistors exhibit a f
provide a f

of 5.5GHz. Both types exhibit low noise (3.5dB),

T

making them ideal for high frequency amplifier and mixer
applications.

The HFA3046 and HFA3127 are all NPN arrays while the
HFA3128 has all PNP transistors. The HFA3096 is an
NPN-PNP combination. Access is provided to each of the
terminals for the individual transistors for maximum
application flexibility. Monolithic construction of these
transistor arrays provides close electrical and thermal
matching of the five transistors.

Intersil provides an Application Note illustrating the use of
these devices as RF amplifiers. For more information, visit
our website at www.intersil.com.

of 8GHz while the PNP transistors

T

December 21, 2005

FN3076.13

Features

• NPN Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz

• NPN Current Gain (h

• NPN Early Voltage (V

• PNP Transistor (f

• PNP Current Gain (h

• PNP Early Voltage (V

). . . . . . . . . . . . . . . . . . . . . . . . 130

FE

) . . . . . . . . . . . . . . . . . . . . . . . 50V

A

). . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz

T

). . . . . . . . . . . . . . . . . . . . . . . . . 60

FE

) . . . . . . . . . . . . . . . . . . . . . . . .20V

A

• Noise Figure (50Ω) at 1.0GHz . . . . . . . . . . . . . . . . . 3.5dB

• Collector to Collector Leakage. . . . . . . . . . . . . . . . . .<1pA

• Complete Isolation Between Transistors

• Pin Compatible with Industry Standard 3XXX Series
Arrays

• Pb-Free Plus Anneal Available (RoHS Compliant)

Applications

• VHF/UHF Amplifiers

•VHF/UHF Mixers

• IF Converters

• Synchronous Detectors

Ordering Information

PART NUMBER* PART MARKING TEMP. RANGE (°C) PACKAGE PKG. DWG. #

HFA3046B HFA3046B -55 to 125 14 Ld SOIC M14.15

HFA3046BZ (Note) HFA3046BZ -55 to 125 14 Ld SOIC (Pb-free) M14.15

HFA3096B HFA3096B -55 to 125 16 Ld SOIC M16.15

HFA3096BZ (Note) HFA3096BZ -55 to 125 16 Ld SOIC (Pb-free) M16.15

HFA3127B HFA3127B -55 to 125 16 Ld SOIC M16.15

HFA3127BZ (Note) HFA3127BZ -55 to 125 16 Ld SOIC (Pb-free) M16.15

HFA3127R 127 -55 to 125 16 Ld 3x3 QFN L16.3x3

HFA3127RZ (Note) 127Z -55 to 125 16 Ld 3x3 QFN (Pb-free) L16.3x3

HFA3128B HFA3128B -55 to 125 16 Ld SOIC M16.15

HFA3128BZ (Note) HFA3128BZ -55 to 125 16 Ld SOIC (Pb-free) M16.15

HFA3128R 128 -55 to 125 16 Ld 3x3 QFN L16.3x3

HFA3128RZ (Note) 128Z -55 to 125 16 Ld 3x3 QFN (Pb-free) L16.3x3

*Add “96” suffix for tape and reel.
NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate

termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL
classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 1-888-468-3774

| Intersil (and design) is a registered trademark of Intersil Americas Inc.

Copyright Intersil Americas Inc. 1998, 2005. All Rights Reserved

All other trademarks mentioned are the property of their respective owners.

Pinouts

1

Q

2

3

Q

4

5

6

7

HFA3046

TOP VIEW

1

Q

5

2

Q

4

Q

3

HFA3046, HFA3096, HFA3127, HFA3128

HFA3096

TOP VIEW

NC

14

13

12

11

10

9

8

1

Q

1

2

3

4

Q

2

5

6

7

Q

3

8

16

15

Q

5

14

13

12

Q

4

11

10

9

NC

HFA3127, HFA3128

TOP VIEW

Q2C

Q1C

Q1E

15

16 14 13

1

2

3

4

5

6

7

8

Q1B

HFA3127

TOP VIEW

Q

Q

2

Q

3

HFA3128

TOP VIEW

16

1

15

14

Q

5

13

12

11

10

Q

4

9

NC

1

2

3

Q

2

4

5

6

7

Q

3

8

16

Q

1

15

14

Q

5

13

12

11

10

Q

4

9

Q2E

Q2B

NC

Q3C

1

2

3

4

6578

Q3E

Q3B

12

Q5B

11

Q5E

10

Q5C

9

Q4C

Q4B

Q4E

2

FN3076.13

December 21, 2005

HFA3046, HFA3096, HFA3127, HFA3128

Absolute Maximum Ratings Thermal Information

Collector to Emitter Voltage (Open Base) . . . . . . . . . . . . . . . . . . 8V

Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . 12V

Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 5.5V

Collector Current (100% Duty Cycle) . . . . . . 18.5mA at T

34mA at T
37mA at T

= 150°C

J

= 125°C

J

= 110°C

J

Peak Collector Current (Any Condition). . . . . . . . . . . . . . . . . . 65mA

Operating Information

Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to 125°C

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:

is measured with the component mounted on an evaluation PC board in free air.

1. θ

JA

2. For θ

3. θ

, the “case temp” location is the center of the exposed metal pad on the package underside.

JC

is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.

JA

Thermal Resistance (Typical) θ

(°C/W) θJC (°C/W)

JA

14 Ld SOIC Package (Note 1) . . . . . . . 120 N/A

16 Ld SOIC Package (Note 1) . . . . . . . 115 N/A

QFN Package (Notes 2, 3). . . . . . . . . . 57 10

Maximum Power Dissipation (Any One Transistor) . . . . . . . . 0.15W

Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . 175°C

Maximum Junction Temperature (Plastic Package) . . . . . . . 150°C

Maximum Storage Temperature Range . . . . . . . . . . -65°C to 150°C

Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300°C

(SOIC - Lead Tips Only)

Electrical Specifications T

= 25°C

A

DIE SOIC, QFN

PARAMETER TEST CONDITIONS

UNITSMIN TYP MAX MIN TYP MAX

DC NPN CHARACTERISTICS

Collector to Base Breakdown
Voltage, V

(BR)CBO

Collector to Emitter Breakdown
Voltage, V

(BR)CEO

Collector to Emitter Breakdown
Voltage, V

(BR)CES

Emitter to Base Breakdown
Voltage, V

Collector-Cutoff-Current, I

Collector-Cutoff-Current, I

(BR)EBO

CEO

CBO

Collector to Emitter Saturation
Voltage, V

Base to Emitter Voltage, V

CE(SAT)

BE

DC Forward-Current Transfer
Ratio, h

FE

Early Voltage, V

A

Base to Emitter Voltage Drift I

IC = 100µA, IE = 0 12 18 - 12 18 - V

IC = 100µA, IB = 0 8 12 - 8 12 - V

IC = 100µA, Base Shorted to Emitter 10 20 - 10 20 - V

IE = 10µA, IC = 0 5.5 6 - 5.5 6 - V

VCE = 6V, IB = 0 - 2 100 - 2 100 nA

VCB = 8V, IE = 0 - 0.1 10 - 0.1 10 nA

IC = 10mA, IB = 1mA - 0.3 0.5 - 0.3 0.5 V

IC = 10mA - 0.85 0.95 - 0.85 0.95 V

IC = 10mA, VCE = 2V 40 130 - 40 130 -

IC = 1mA, VCE = 3.5V 20 50 - 20 50 - V

= 10mA - -1.5 - - -1.5 - mV/°C

C

Collector to Collector Leakage - 1 - - 1 - pA

Electrical Specifications T

= 25°C

A

PARAMETER TEST CONDITIONS

DYNAMIC NPN CHARACTERISTICS

Noise Figure f = 1.0GHz, V

I

= 5mA, ZS = 50Ω

C

Current Gain-Bandwidth

f

T

Product

IC = 1mA, VCE = 5V - 5.5 - - 5.5 - GHz

I

= 10mA, VCE = 5V - 8 - - 8 - GHz

C

3

CE

= 5V,

DIE SOIC, QFN

UNITSMIN TYP MAX MIN TYP MAX

- 3.5 - - 3.5 - dB

FN3076.13

December 21, 2005

HFA3046, HFA3096, HFA3127, HFA3128

Electrical Specifications T

= 25°C (Continued)

A

DIE SOIC, QFN

PARAMETER TEST CONDITIONS

Power Gain-Bandwidth Product,
f

MAX

Base to Emitter Capacitance V

Collector to Base Capacitance V

Electrical Specifications T

IC = 10mA, VCE = 5V - 6 - - 2.5 - GHz

= -3V - 200 - - 500 - fF

BE

= 3V - 200 - - 500 - fF

CB

= 25°C

A

UNITSMIN TYP MAX MIN TYP MAX

DIE SOIC, QFN

PARAMETER TEST CONDITIONS

UNITSMIN TYP MAX MIN TYP MAX

DC PNP CHARACTERISTICS

Collector to Base Breakdown
Voltage, V

(BR)CBO

Collector to Emitter Breakdown
Voltage, V

(BR)CEO

Collector to Emitter Breakdown
Voltage, V

(BR)CES

Emitter to Base Breakdown
Voltage, V

Collector Cutoff Current, I

Collector Cutoff Current, I

(BR)EBO

CEO

CBO

Collector to Emitter Saturation
Voltage, V

Base to Emitter Voltage, V

CE(SAT)

BE

DC Forward-Current Transfer
Ratio, h

FE

Early Voltage, V

A

Base to Emitter Voltage Drift I

IC = -100µA, IE = 0 10 15 - 10 15 - V

IC = -100µA, IB = 0 8 15 - 8 15 - V

IC = -100µA, Base Shorted to Emitter 10 15 - 10 15 - V

IE = -10µA, IC = 0 4.5 5 - 4.5 5 - V

VCE = -6V, IB = 0 - 2 100 - 2 100 nA

VCB = -8V, IE = 0 - 0.1 10 - 0.1 10 nA

IC = -10mA, IB = -1mA - 0.3 0.5 - 0.3 0.5 V

IC = -10mA - 0.85 0.95 - 0.85 0.95 V

IC = -10mA, VCE = -2V 20 60 - 20 60 -

IC = -1mA, VCE = -3.5V 10 20 - 10 20 - V

= -10mA - -1.5 - - -1.5 - mV/°C

C

Collector to Collector Leakage - 1 - - 1 - pA

Electrical Specifications T

= 25°C

A

PARAMETER TEST CONDITIONS

DYNAMIC PNP CHARACTERISTICS

Noise Figure f = 1.0GHz, V

I

= -5mA, ZS = 50Ω

C

Current Gain-Bandwidth

f

T

Product

Power Gain-Bandwidth
Product

Base to Emitter Capacitance V

Collector to Base Capacitance V

IC = -1mA, VCE = -5V - 2 - - 2 - GHz

I

= -10mA, VCE = -5V - 5.5 - - 5.5 - GHz

C

I

= -10mA, VCE = -5V - 3 - - 2 - GHz

C

= 3V - 200 - - 500 - fF

BE

= -3V - 300 - - 600 - fF

CB

4

CE

= -5V,

DIE SOIC, QFN

UNITSMIN TYP MAX MIN TYP MAX

- 3.5 - - 3.5 - dB

FN3076.13

December 21, 2005