intersil HFA3101 DATA SHEET

HFA3101

Data Sheet September 2004

Gilbert Cell UHF Transistor Array

The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high f maintaining excellent h

and VBE matching characteristics

(10GHz) while

that have been maximized through careful attention to circuit design and layout, making this product ideal for communication circuits. For use in mixer applications, the cell provides high gain and good cancellation of 2nd order distortion terms.

Ordering Information

PART NUMBER

(BRAND)

HFA3101B (H3101B)

HFA3101BZ (H3101B) (Note)

HFA3101B96 (H3101B)

HFA3101BZ96 (H3101B) (Note)

NOTE: Intersil Pb-free products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which is compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020C.

TEMP.

RANGE (°C)

-40 to 85 8 Ld SOIC M8.15

-40 to 85 8 Ld SOIC

-40 to 85 8 Ld SOIC Tape

PACKAGE

M8.15

(Pb-free)

M8.15

and Reel

M8.15

and Reel (Pb-free)

PKG.

DWG. #

FN3663.5

Features

• Pb-free Available as an Option

• High Gain Bandwidth Product (fT) . . . . . . . . . . . . . 10GHz

• High Power Gain Bandwidth Product. . . . . . . . . . . . 5GHz

• Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . . . . . .70

• Low Noise Figure (Transistor) . . . . . . . . . . . . . . . . . 3.5dB

• Excellent hFE and VBE Matching

• Low Collector Leakage Current . . . . . . . . . . . . . . <0.01nA

• Pin to Pin Compatible to UPA101

Applications

• Balanced Mixers

• Multipliers

• Demodulators/Modulators

• Automatic Gain Control Circuits

• Phase Detectors

• Fiber Optic Signal Processing

• Wireless Communication Systems

• Wide Band Amplification Stages

• Radio and Satellite Communications

• High Performance Instrumentation

Pinout

HFA3101

(SOIC)

TOP VIEW

Q1Q2Q3Q

NOTE: Q5 and Q6 - 2 Paralleled 3µm x 50µm Transistors Q

, Q2, Q3, Q4 - Single 3µm x 50µm Transistors

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Intersil (and design) is a registered trademark of Intersil Americas Inc.

All other trademarks mentioned are the property of their respective owners.

HFA3101

Absolute Maximum Ratings Thermal Information

, Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . 8.0V

CEO

, Collector to Base Voltage. . . . . . . . . . . . . . . . . . . . . . . 12.0V

CBO

, Emitter to Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . 5.5V

EBO

IC, Collector Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA

Operating Conditions

Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. θJA is measured with the component mounted on an evaluation PC board in free air.

Thermal Resistance (Typical, Note 1) θJA (oC/W)

SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185

Maximum Junction Temperature (Die). . . . . . . . . . . . . . . . . . .175oC

Maximum Junction Temperature (Plastic Package). . . . . . . . .150oC

Maximum Storage Temperature Range. . . . . . . . . . -65oC to 150oC

Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300oC

(SOIC - Lead Tips Only)

Electrical Specifications T

= 25oC

(NOTE 2)

TEST

PARAMETER TEST CONDITIONS

Collector to Base Breakdown V oltage, V Collector to Emitter Breakdown Voltage, V

Q5 and Q Emitter to Base Breakdown Voltage, V Collector Cutoff Current, I Emitter Cutoff Current, I DC Current Gain, hFE, Q1 thru Q Collector to Base Capacitance, C

(BR)EBO

, Q1 thru Q

CBO

, Q5 and Q

EBO

, Q1 thru Q6IC = 100µA, IE = 0 A 12 18 - V

(BR)CBO

(BR)CEO

, Q1 thru Q6IE = 10µA, IC = 0 A 5.5 6 - V

Q1 thru Q Q5 and Q

Emitter to Base Capacitance, C

Q1 thru Q Q5 and Q

Current Gain-Bandwidth Product, f

Q1 thru Q Q5 and Q

Power Gain-Bandwidth Product, f

MAX

Q1 thru Q Q5 and Q

Available Gain at Minimum Noise Figure, G Q5 and Q

Minimum Noise Figure, NF

50Ω Noise Figure, NF

DC Current Gain Matching, h Q3 and Q4, and Q5 and Q

, Q5 and Q

MIN

, Q5 and Q

50Ω

FE1/hFE2

, Q1 and Q2,

NFMIN

Input Offset Voltage, VOS, (Q1 and Q2), (Q3 and Q4),

IC = 100µA, IB = 0 A 8 12 - V

VCB = 8V, IE = 0 A - 0.1 10 nA VEB = 1V, IC = 0 A - - 200 nA IC = 10mA, VCE = 3V A 40 70 VCB = 5V, f = 1MHz C - 0.300 - pF

4 6

VEB = 0, f = 1MHz B - 0.200 - pF

4 6

= 10mA, VCE = 5V C - 10 - GHz

4IC

= 20mA, VCE = 5V C - 10 - GHz

6IC

= 10mA, VCE = 5V C - 5 - GHz

4IC

= 20mA, VCE = 5V C - 5 - GHz

6IC

IC = 5mA, V

= 3V

IC = 5mA, V

= 3V

IC = 5mA, V

= 3V

f = 0.5GHz C - 17.5 - dB f = 1.0GHz C - 11.9 - dB f = 0.5GHz C - 1.7 - dB f = 1.0GHz C - 2.0 - dB f = 0.5GHz C - 2.25 - dB f = 1.0GHz C - 2.5 - dB

IC = 10mA, VCE = 3V A 0.9 1.0 1.1

IC = 10mA, VCE = 3V A - 1.5 5 mV

LEVEL

MIN TYP MAX UNITS

- 0.600 - pF

- 0.400 - pF

(Q5 and Q6) Input Offset Current, IC, (Q1 and Q2), (Q3 and Q4),

IC = 10mA, VCE = 3V A - 5 25 µA

(Q5 and Q6) Input Offset Voltage TC, dVOS/dT, (Q1 and Q2, Q3 and Q4,

and Q6)

Collector to Collector Leakage, I

TRENCH-LEAKAGE

IC = 10mA, VCE = 3V C - 0.5 - µV/oC

∆V

= 5V B - 0.01 - nA

TEST

NOTE:

2. Test Level: A. Production Tested, B. Typical or Guaranteed Limit Based on Characterization, C. Design Typical for Information Only.

HFA3101

PSPICE Model for a 3 µm x 50 µm Transistor

.Model NUHFARRY NPN

+ (IS = 1.840E-16 XTI = 3.000E+00 EG = 1.110E+00 VAF = 7.200E+01 + VAR = 4.500E+00 BF = 1.036E+02 ISE = 1.686E-19 NE = 1.400E+00 + IKF = 5.400E-02 XTB = 0.000E+00 BR = 1.000E+01 ISC = 1.605E-14 + NC = 1.800E+00 IKR = 5.400E-02 RC = 1.140E+01 CJC = 3.980E-13 + MJC = 2.400E-01 VJC = 9.700E-01 FC = 5.000E-01 CJE = 2.400E-13 + MJE = 5.100E-01 VJE = 8.690E-01 TR = 4.000E-09 TF = 10.51E-12 + ITF = 3.500E-02 XTF = 2.300E+00 VTF = 3.500E+00 PTF = 0.000E+00 + XCJC = 9.000E-01 CJS = 1.689E-13 VJS = 9.982E-01 MJS = 0.000E+00 + RE = 1.848E+00 RB = 5.007E+01 RBM = 1.974E+00 KF = 0.000E+00 + AF = 1.000E+00)

Common Emitter S-Parameters of 3 µm x 50 µm Transistor

FREQ. (Hz) |S11| PHASE(S11) |S12| PHASE(S12) |S21| PHASE(S21) |S22| PHASE(S22)

VCE = 5V and IC = 5mA

1.0E+08 0.83 -11.78 1.41E-02 78.88 11.07 168.57 0.97 -11.05

2.0E+08 0.79 -22.82 2.69E-02 68.63 10.51 157.89 0.93 -21.35

3.0E+08 0.73 -32.64 3.75E-02 59.58 9.75 148.44 0.86 -30.44

4.0E+08 0.67 -41.08 4.57E-02 51.90 8.91 140.36 0.79 -38.16

5.0E+08 0.61 -48.23 5.19E-02 45.50 8.10 133.56 0.73 -44.59

6.0E+08 0.55 -54.27 5.65E-02 40.21 7.35 127.88 0.67 -49.93

7.0E+08 0.50 -59.41 6.00E-02 35.82 6.69 123.10 0.62 -54.37

8.0E+08 0.46 -63.81 6.27E-02 32.15 6.11 119.04 0.57 -58.10

9.0E+08 0.42 -67.63 6.47E-02 29.07 5.61 115.57 0.53 -61.25

1.0E+09 0.39 -70.98 6.63E-02 26.45 5.17 112.55 0.50 -63.96

1.1E+09 0.36 -73.95 6.75E-02 24.19 4.79 109.91 0.47 -66.31

1.2E+09 0.34 -76.62 6.85E-02 22.24 4.45 107.57 0.45 -68.37

1.3E+09 0.32 -79.04 6.93E-02 20.53 4.15 105.47 0.43 -70.19

1.4E+09 0.30 -81.25 7.00E-02 19.02 3.89 103.57 0.41 -71.83

1.5E+09 0.28 -83.28 7.05E-02 17.69 3.66 101.84 0.40 -73.31

1.6E+09 0.27 -85.17 7.10E-02 16.49 3.45 100.26 0.39 -74.66

1.7E+09 0.25 -86.92 7.13E-02 15.41 3.27 98.79 0.38 -75.90

1.8E+09 0.24 -88.57 7.17E-02 14.43 3.10 97.43 0.37 -77.05

1.9E+09 0.23 -90.12 7.19E-02 13.54 2.94 96.15 0.36 -78.12

2.0E+09 0.22 -91.59 7.21E-02 12.73 2.80 94.95 0.35 -79.13

2.1E+09 0.21 -92.98 7.23E-02 11.98 2.68 93.81 0.35 -80.09

2.2E+09 0.20 -94.30 7.25E-02 11.29 2.56 92.73 0.34 -80.99

2.3E+09 0.20 -95.57 7.27E-02 10.64 2.45 91.70 0.34 -81.85

2.4E+09 0.19 -96.78 7.28E-02 10.05 2.35 90.72 0.33 -82.68

2.5E+09 0.18 -97.93 7.29E-02 9.49 2.26 89.78 0.33 -83.47

2.6E+09 0.18 -99.05 7.30E-02 8.96 2.18 88.87 0.33 -84.23

2.7E+09 0.17 -100.12 7.31E-02 8.47 2.10 88.00 0.33 -84.97

3-3

HFA3101

Common Emitter S-Parameters of 3 µm x 50 µm Transistor (Continued)

FREQ. (Hz) |S

2.8E+09 0.17 -101.15 7.31E-02 8.01 2.02 87.15 0.33 -85.68

2.9E+09 0.16 -102.15 7.32E-02 7.57 1.96 86.33 0.33 -86.37

3.0E+09 0.16 -103.11 7.32E-02 7.16 1.89 85.54 0.33 -87.05

VCE = 5V and IC = 10mA

1.0E+08 0.72 -16.43 1.27E-02 75.41 15.12 165.22 0.95 -14.26

2.0E+08 0.67 -31.26 2.34E-02 62.89 13.90 152.04 0.88 -26.95

3.0E+08 0.60 -43.76 3.13E-02 52.58 12.39 141.18 0.79 -37.31

4.0E+08 0.53 -54.00 3.68E-02 44.50 10.92 132.57 0.70 -45.45

5.0E+08 0.47 -62.38 4.05E-02 38.23 9.62 125.78 0.63 -51.77

6.0E+08 0.42 -69.35 4.31E-02 33.34 8.53 120.37 0.57 -56.72

7.0E+08 0.37 -75.26 4.49E-02 29.47 7.62 116.00 0.51 -60.65

8.0E+08 0.34 -80.36 4.63E-02 26.37 6.86 112.39 0.47 -63.85

9.0E+08 0.31 -84.84 4.72E-02 23.84 6.22 109.36 0.44 -66.49

1.0E+09 0.29 -88.83 4.80E-02 21.75 5.69 106.77 0.41 -68.71

1.1E+09 0.27 -92.44 4.86E-02 20.00 5.23 104.51 0.39 -70.62

1.2E+09 0.25 -95.73 4.90E-02 18.52 4.83 102.53 0.37 -72.28

1.3E+09 0.24 -98.75 4.94E-02 17.25 4.49 100.75 0.35 -73.76

1.4E+09 0.22 -101.55 4.97E-02 16.15 4.19 99.16 0.34 -75.08

1.5E+09 0.21 -104.15 4.99E-02 15.19 3.93 97.70 0.33 -76.28

1.6E+09 0.20 -106.57 5.01E-02 14.34 3.70 96.36 0.32 -77.38

1.7E+09 0.20 -108.85 5.03E-02 13.60 3.49 95.12 0.31 -78.41

1.8E+09 0.19 -110.98 5.05E-02 12.94 3.30 93.96 0.31 -79.37

1.9E+09 0.18 -113.00 5.06E-02 12.34 3.13 92.87 0.30 -80.27

2.0E+09 0.18 -114.90 5.07E-02 11.81 2.98 91.85 0.30 -81.13

2.1E+09 0.17 -116.69 5.08E-02 11.33 2.84 90.87 0.30 -81.95

2.2E+09 0.17 -118.39 5.09E-02 10.89 2.72 89.94 0.29 -82.74

2.3E+09 0.16 -120.01 5.10E-02 10.50 2.60 89.06 0.29 -83.50

2.4E+09 0.16 -121.54 5.11E-02 10.13 2.49 88.21 0.29 -84.24

2.5E+09 0.16 -122.99 5.12E-02 9.80 2.39 87.39 0.29 -84.95

2.6E+09 0.15 -124.37 5.12E-02 9.49 2.30 86.60 0.29 -85.64

2.7E+09 0.15 -125.69 5.13E-02 9.21 2.22 85.83 0.29 -86.32

2.8E+09 0.15 -126.94 5.13E-02 8.95 2.14 85.09 0.29 -86.98

2.9E+09 0.15 -128.14 5.14E-02 8.71 2.06 84.36 0.29 -87.62

3.0E+09 0.14 -129.27 5.15E-02 8.49 1.99 83.66 0.29 -88.25

| PHASE(S11)|S12| PHASE(S12)|S21| PHASE(S21)|S22|PHASE(S22)

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