Intersil Corporation HFA3128B, HFA3128, HFA3127B, HFA3096B, HFA3096 Datasheet

HFA3046, HFA3096,

HFA3127, HFA3128

Data Sheet October 1998 File Number 3076.10

Ultra High Frequency Transistor Arrays

The HF A3046, HFA3096, HFA3127 and the HFA3128 are
Ultra High Frequency Transistor Arrays that are fabricated
from Intersil Corporation’s complementary bipolar UHF-1
process. Each array consists of fiv e dielectrically isolated
transistors on a common monolithic substrate. The NPN
transistors exhibit a f
provide a f

of 5.5GHz. Both types exhibit low noise (3.5dB),

T

of 8GHz while the PNP transistors

T

making them ideal for high frequency amplifier and mixer
applications.

The HFA3046 and HFA3127 are all NPN arrays while the
HFA3128 has all PNP transistors. The HFA3096 is an NPN­PNP combination. Access is provided to each of the
terminals for the individual transistors for maximum
application flexibility. Monolithic construction of these
transistor arrays provides close electrical and thermal
matching of the five transistors.

For PSPICE models, please request AnswerFAX document
number 663046. Intersil also provides an Application Note
illustrating the use of these devices as RF amplifiers
(request AnswerFAX document 99315).

Ordering Information

TEMP.

PART NUMBER

RANGE (oC) PACKAGE

HFA3046B -55 to 125 14 Ld SOIC M14.15
HFA3096B -55 to 125 16 Ld SOIC M16.15
HFA3127B -55 to 125 16 Ld SOIC M16.15
HFA3128B -55 to 125 16 Ld SOIC M16.15

PKG.

NO.

Features

• NPN Transistor (fT). . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz

• NPN Current Gain (h

• NPN Early Voltage (V

• PNP Transistor (f

• PNP Current Gain (h

• PNP Early Voltage (V

). . . . . . . . . . . . . . . . . . . . . . . 130

FE

) . . . . . . . . . . . . . . . . . . . . . . . 50V

A

). . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz

T

). . . . . . . . . . . . . . . . . . . . . . . . 60

FE

) . . . . . . . . . . . . . . . . . . . . . . . 20V

A

• Noise Figure (50Ω) at 1.0GHz . . . . . . . . . . . . . . . . . 3.5dB

• Collector-to-Collector Leakage. . . . . . . . . . . . . . . . . <1pA

• Complete Isolation Between Transistors

• Pin Compatible with Industry Standard 3XXX Series
Arrays

Applications

• VHF/UHF Amplifiers

• VHF/UHF Mixers

• IF Converters

• Synchronous Detectors

Pinouts

1

Q

2
3

Q

4
5
6
7

HFA3046

TOP VIEW

1

Q

5

2

Q

4

Q

3

HFA3096

TOP VIEW

NC

14
13
12
11
10

9
8

1

Q

1

2
3
4

Q

2

5
6
7

Q

3

8

3-447

16
15

Q

5

14
13
12

Q

4

11
10

9

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

NC

http://www.intersil.com or 407-727-9207

TOP VIEW

1
2
3

Q

4
5
6
7

Q

8

HFA3127

Q

2

3

HFA3128

TOP VIEW

16

1

15
14

Q

5

13
12
11
10

Q

4

9

NC

1
2
3

Q

2

4
5
6
7

Q

3

8

16

Q

1

15
14

Q

5

13
12
11
10

Q

4

9

| Copyright © Intersil Corporation 1999

HFA3046, HFA3096, HFA3127, HFA3128

Absolute Maximum Ratings Thermal Information

Collector to Emitter Voltage (Open Base) . . . . . . . . . . . . . . . . . . 8V

Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . 12V

Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 5.5V

Collector Current (100% Duty Cycle) . . . . . 18.5mA at TJ= 150oC

34mA at TJ= 125oC
37mA at TJ= 110oC

Peak Collector Current (Any Condition). . . . . . . . . . . . . . . . . . 65mA

Operating Information

Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. θJA is measured with the component mounted on an evaluation PC board in free air.

Thermal Resistance (Typical, Note 1) θJA (oC/W)

14 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . 120

16 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . 115

Maximum Power Dissipation (Any One Transistor) . . . . . . . . 0.15W

Maximum Junction Temperature (Die). . . . . . . . . . . . . . . . . . . 175oC

Maximum Junction Temperature (Plastic Package) . . . . . . . 150oC

Maximum Storage Temperature Range. . . . . . . . . . -65oC to 150oC

Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC

(SOIC - Lead Tips Only)

Electrical Specifications T

PARAMETER TEST CONDITIONS

DC NPN CHARACTERISTICS

Collector-to-Base Breakdown
Voltage, V

Collector-to-Emitter Breakdown
Voltage, V

Collector-to-Emitter Breakdown
Voltage, V

Emitter-to-Base Breakdown
Voltage, V

Collector-Cutoff-Current, I
Collector-Cutoff-Current, I
Collector-to-Emitter Saturation

Voltage, V
Base-to-Emitter Voltage, V
DC Forward-Current Transfer

Ratio, h
Early Voltage, V
Base-to-Emitter Voltage Drift IC = 10mA - -1.5 - - -1.5 - mV/oC
Collector-to-Collector Leakage - 1 - - 1 - pA

(BR)CBO

(BR)CEO

(BR)CES

(BR)EBO

CEO
CBO

CE(SAT)

BE

FE

A

= 25oC

A

DIE SOIC

UNITSMIN TYP MAX MIN TYP MAX

IC = 100µA, IE = 0 1218-1218- V

IC = 100µA, IB = 0 8 12 - 8 12 - V

IC = 100µA, Base Shorted to Emitter 10 20 - 10 20 - V

IE = 10µA, IC = 0 5.5 6 - 5.5 6 - V

VCE = 6V, IB = 0 - 2 100 - 2 100 nA
VCB = 8V, IE = 0 - 0.1 10 - 0.1 10 nA
IC = 10mA, IB = 1mA - 0.3 0.5 - 0.3 0.5 V

IC = 10mA - 0.85 0.95 - 0.85 0.95 V
IC = 10mA

VCE = 2V
IC = 1mA, VCE = 3.5V 20 50 - 20 50 - V

40 130 - 40 130 -

Electrical Specifications T

PARAMETER TEST CONDITIONS

DYNAMIC NPN CHARACTERISTICS

Noise Figure f = 1.0GHz, VCE = 5V,

fT Current Gain-Bandwidth
Product

Power Gain-Bandwidth Product,
f

MAX

= 25oC

A

IC = 5mA, ZS = 50Ω
IC = 1mA, VCE = 5V - 5.5 - - 5.5 - GHz
IC = 10mA, VCE = 5V - 8 - - 8 - GHz
IC = 10mA, VCE = 5V - 6 - - 2.5 - GHz

3-448

DIE SOIC

UNITSMIN TYP MAX MIN TYP MAX

- 3.5 - - 3.5 - dB

HFA3046, HFA3096, HFA3127, HFA3128

Electrical Specifications T

PARAMETER TEST CONDITIONS

Base-to-Emitter Capacitance VBE = -3V - 200 - - 500 - fF
Collector-to-Base Capacitance VCB = 3V - 200 - - 500 - fF

Electrical Specifications T

PARAMETER TEST CONDITIONS

DC PNP CHARACTERISTICS

Collector-to-Base Breakdown
Voltage, V

Collector-to-Emitter Breakdown
Voltage , V

Collector-to-Emitter Breakdown
Voltage, V

Emitter-to-Base Breakdown
Voltage, V

Collector-Cutoff-Current, I
Collector-Cutoff-Current, I
Collector-to-Emitter Saturation

Voltage, V
Base-to-Emitter Voltage, V
DC Forward-Current Transfer

Ratio, h
Early Voltage, V
Base-to-Emitter Voltage Drift IC = -10mA - -1.5 - - -1.5 - mV/oC
Collector-to-Collector Leakage - 1 - - 1 - pA

(BR)CBO

(BR)CEO

(BR)CES

(BR)EBO

CEO
CBO

CE(SAT)

BE

FE

A

= 25oC (Continued)

A

DIE SOIC

UNITSMIN TYP MAX MIN TYP MAX

= 25oC

A

DIE SOIC

UNITSMIN TYP MAX MIN TYP MAX

IC = -100µA, IE = 0 1015-1015- V

IC = -100µA, IB = 0 8 15 - 8 15 - V

IC = -100µA, Base Shorted to Emitter 10 15 - 10 15 - V

IE = -10µA, IC = 0 4.5 5 - 4.5 5 - V

VCE = -6V, IB = 0 - 2 100 - 2 100 nA
VCB = -8V, IE = 0 - 0.1 10 - 0.1 10 nA
IC = -10mA, IB = -1mA - 0.3 0.5 - 0.3 0.5 V

IC = -10mA - 0.85 0.95 - 0.85 0.95 V
IC = -10mA, VCE = -2V 20 60 - 20 60 -

IC = -1mA, VCE = -3.5V 10 20 - 10 20 - V

Electrical Specifications T

PARAMETER TEST CONDITIONS

DYNAMIC PNP CHARACTERISTICS

Noise Figure f = 1.0GHz, VCE = -5V,

fT Current Gain-Bandwidth
Product

Power Gain-Bandwidth
Product

Base-to-Emitter Capacitance VBE = 3V - 200 - - 500 - fF
Collector-to-Base Capacitance VCB = -3V - 300 - - 600 - fF

= 25oC

A

DIE SOIC

UNITSMIN TYP MAX MIN TYP MAX

- 3.5 - - 3.5 - dB

IC = -5mA, ZS = 50Ω
IC = -1mA, VCE = -5V - 2 - - 2 - GHz
IC = -10mA, VCE = -5V - 5.5 - - 5.5 - GHz
IC = -10mA, VCE = -5V - 3 - - 2 - GHz

3-449