Intersil Corporation HFA1120-883 Datasheet

July 1994

HFA1120/883

850MHz Current Feedback

Amplifier with Offset Adjust

Features

• This Circuit is Processed in Accordance to MIL-STD­883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.

• Low Distortion (HD3, 30MHz) . . . . . . . . . . -84dBc (Typ)

• Wide -3dB Bandwidth . . . . . . . . . . . . . . . 850MHz (Typ)

• Very High Slew Rate . . . . . . . . . . . . . . . 2300V/µs (Typ)

• Fast Settling (0.1%) . . . . . . . . . . . . . . . . . . . . 11ns (Typ)

• Excellent Gain Flatness (to 50MHz) . . . . . 0.05dB (Typ)

• High Output Current . . . . . . . . . . . . . . . . . . 65mA (Typ)

• Fast Overdrive Recovery. . . . . . . . . . . . . . . <10ns (Typ)

Applications

• Video Switching and Routing

• Pulse and Video Amplifiers

• Wideband Amplifiers

• RF/IF Signal Processing

• Flash A/D Driver

• Medical Imaging Systems

Description

The HFA1120/883 is a high speed, wideband, fast settling
current feedback amplifier. Built with Intersil’ proprietary,
complementary bipolar UHF-1 process, it is the fastest
monolithic amplifier available from any semiconductor man­ufacturer.

The HFA1120/883’s wide bandwidth, fast settling character­istic, and low output impedance, make this amplifier ideal for
driving fast A/D converters. Additionally, it offers offset volt­age nulling capabilities as described in the “Offset Adjust­ment” section of this datasheet.

Component and composite video systems will also benefit
from this amplifier’s performance, as indicated by the excel­lent gain flatness, and 0.03%/0.05 Degree Differential Gain/
Phase specifications (R

= 75Ω).

L

Ordering Information

TEMPERATURE

PART NUMBER

HFA1120MJ/883 -55oC to +125oC 8 Lead CerDIP

RANGE PACKAGE

Pinout

BAL

-IN

+IN

1
2
3
4

V-

HFA1120/883

(CERDIP)

TOP VIEW

-

+

8

NC

7

V+

6

OUT

5

BAL

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

3-199

Spec Number 511105-883

File Number 3617.1

Specifications HFA1120/883

Absolute Maximum Ratings Thermal Information

Voltage Between V+ and V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V

Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V-

Output Current (50% Duty Cycle) . . . . . . . . . . . . . . . . . . . . . . . .±55mA

Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V

Storage Temperature Range . . . . . . . . . . . . . . -65oC ≤ TA≤ +150oC

Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Operating Conditions

Operating Supply Voltage (±VS) . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5V

Operating Temperature Range. . . . . . . . . . . . .-55oC ≤ TA≤ +125oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Device Tested at: V

PARAMETERS SYMBOL CONDITIONS

Input Offset Voltage V

Common Mode
Rejection Ratio

Power Supply
Rejection Ratio

Non-Inverting Input
(+IN) Current

+IN Current
Common Mode
Sensitivity

+IN Resistance +R

Inverting Input (-IN)
Current

-IN Current Adjust
Range

-IN Current
Common Mode
Sensitivity

-IN Current Power
Supply Sensitivity

Output Voltage
Swing

= ±5V, AV= +1, RF= 510Ω, R

SUPPLY

IO

VCM = 0V 1 +25oC-66mV

CMRR ∆VCM = ±2V

V+ = 3V, V- = -7V
V+ = 7V, V- = -3V

PSRRP ∆V

V+ = 6.25V, V- = -5V
V+ = 3.75V, V- = -5V

PSRRN ∆V

V+ = 5V, V- = -6.25V
V+ = 5V, V- = -3.75V

I

BSP

CMS

VCM = 0V 1 +25oC -40 40 µA

∆VCM = ±2V

IBP

V+ = 3V, V- = -7V
V+ = 7V, V- = -3V

Note 1 1 +25oC25-kΩ

IN

I

BSN

ADJ

CMS

VCM = 0V 1 +25oC -50 50 µA

VCM = 0V, Note 3 1 +25oC 100 -100 µA

IBN

∆VCM = ±2V

IBN

V+ = 3V, V- = -7V
V+ = 7V, V- = -3V

PPSS

IBN

∆V
V+ = 6.25V, V- = -5V
V+ = 3.75V, V- = -5V

NPSS

IBN

∆V
V+ = 5V, V- = -6.25V
V+ = 5V, V- = -3.75V

V

OP100

AV =-1
RL = 100Ω

V

ON100

AV =-1
RL= 100Ω

= ±1.25V

SUP

= ±1.25V

SUP

= ±1.25V

SUP

= ±1.25V

SUP

SOURCE

VIN = -3.5V 1 +25oC3-V
VIN = -3V 2, 3 +125oC, -55oC 2.5 - V
VIN = +3.5V 1 +25oC - -3 V
VIN = +3V 2, 3 +125oC, -55oC - -2.5 V

Thermal Resistance θ

CerDIP Package . . . . . . . . . . . . . . . . . . . 115oC/W 30oC/W

Maximum Package Power Dissipation at +75oC

CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.87W

Package Power Dissipation Derating Factor above +75oC

CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8.7mW/oC

RL ≥ 50Ω

= 0Ω, RL = 100Ω, V

= 0V, Unless Otherwise Specified.

OUT

GROUP A

SUBGROUPS TEMPERATURE

2, 3 +125oC, -55oC -10 10 mV

1 +25oC40-dB

2, 3 +125oC, -55oC38 - dB

1 +25oC45-dB

2, 3 +125oC, -55oC42 - dB

1 +25oC45-dB

2, 3 +125oC, -55oC42 - dB

2, 3 +125oC, -55oC -65 65 µA

1 +25oC-40µA/V

2, 3 +125oC, -55oC- 50µA/V

2, 3 +125oC, -55oC20 - kΩ

2, 3 +125oC, -55oC -75 75 µA

2, 3 +125oC, -55oC 100 -100 µA

1 +25oC-7µA/V

2, 3 +125oC, -55oC- 10µA/V

1 +25oC-15µA/V

2, 3 +125oC, -55oC- 27µA/V

1 +25oC-15µA/V

2, 3 +125oC, -55oC- 27µA/V

LIMITS

JA

θ

JC

UNITSMIN MAX

3-200

Spec Number 511105-883

Specifications HFA1120/883

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

Device Tested at: V

PARAMETERS SYMBOL CONDITIONS

Output Voltage
Swing

Output Current +I

Quiescent Power
Supply Current

NOTES:

1. Guaranteed from +IN Common Mode Rejection Test, by: +RIN= 1/CMS

2. Guaranteed from V

3. This is the minimum change in inverting input bias current when a BAL pin is connected to V- through a 50Ω resistor.

= ±5V, AV= +1, RF= 510Ω, R

SUPPLY

V

OP50

AV =-1
RL =50Ω

V

ON50

AV =-1
RL =50Ω

OUT

-I

OUT

I

CC

I

EE

Test with RL=50Ω, by: I

OUT

Note 2 1, 2 +25oC, +125oC50 - mA

Note 2 1, 2 +25oC, +125oC - -50 mA

RL = 100Ω 1 +25oC1426mA

RL = 100Ω 1 +25oC -26 -14 mA

= 0Ω, RL = 100Ω, V

SOURCE

GROUP A

= 0V, Unless Otherwise Specified.

OUT

LIMITS

SUBGROUPS TEMPERATURE

VIN = -3V 1, 2 +25oC, +125oC 2.5 - V
VIN = -2V 3 -55oC 1.5 - V
VIN = +3V 1, 2 +25oC, +125oC - -2.5 V
VIN = +2V 3 -55oC - -1.5 V

3 -55oC30-mA

3 -55oC - -30 mA

2, 3 +125oC, -55oC - 33 mA

2, 3 +125oC, -55oC -33 - mA

.

IBP

OUT=VOUT

/50Ω.

UNITSMIN MAX

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

Table 2 Intentionally Left Blank.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

Device Characterized at: V

= ±5V, AV= +2, RF= 360Ω, RL = 100Ω, Unless Otherwise Specified.

SUPPLY

PARAMETERS SYMBOL CONDITIONS NOTES TEMPERATURE

-3dB Bandwidth BW(-1) AV = -1, RF = 430Ω
V

= 200mV

OUT

P-P

BW(+1) AV = +1, RF = 510Ω

V

= 200mV

OUT

P-P

BW(+2) AV = +2,

V

= 200mV

OUT

P-P

Gain Flatness GF30 AV = +2, RF = 510Ω, f ≤30MHz

V

= 200mV

OUT

P-P

GF50 AV = +2, RF = 510Ω, f ≤50MHz

V

= 200mV

OUT

P-P

GF100 AV = +2, RF = 510Ω, f ≤100MHz

V

= 200mV

OUT

P-P

Slew Rate +SR(+1) AV = +1, RF = 510Ω

V

= 5V

OUT

P-P

-SR(+1) AV = +1, RF = 510Ω
V

= 5V

+SR(+2) AV = +2, V

-SR(+2) AV = +2, V

Rise and Fall Time T

OUT

AV = +2, V

R

T

AV = +2, V

F

P-P
OUT
OUT
OUT
OUT

= 5V
= 5V
= 0.5V
= 0.5V

P-P
P-P

P-P
P-P

1 +25oC 300 - MHz

1 +25oC 550 - MHz

1 +25oC 350 - MHz

1 +25oC-±0.04 dB

1 +25oC-±0.10 dB

1 +25oC-±0.30 dB

1, 2 +25oC 1200 - V/µs

1, 2 +25oC 1100 - V/µs

1, 2 +25oC 1650 - V/µs
1, 2 +25oC 1500 - V/µs
1, 2 +25oC-1ns
1, 2 +25oC-1ns

LIMITS

UNITSMIN MAX

3-201

Spec Number 511105-883

Specifications HFA1120/883

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

Device Characterized at: V

PARAMETERS SYMBOL CONDITIONS NOTES TEMPERATURE

Overshoot +OS AV = +2, V

Settling Time TS(0.1) AV = +2, RF = 510Ω

2nd Harmonic
Distortion

3rd Harmonic
Distortion

NOTES:

1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param­eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot-to-lot and within lot variation.

2. Measured between 10% and 90% points.

3. For 200ps input transition times. Overshoot decreases as input transition times increase, especially for AV= +1. Please refer to
Performance Curves.

= ±5V, AV= +2, RF= 360Ω, RL = 100Ω, Unless Otherwise Specified.

SUPPLY

-OS AV = +2, V

OUT
OUT

= 0.5V
= 0.5V

P-P
P-P

1, 3 +25oC - 25 %
1, 3 +25oC - 20 %

1 +25oC - 20 ns

V

= 2V to 0V, to 0.1%

OUT

TS(0.05) AV = +2, RF = 510Ω

V

= 2V to 0V, to 0.05%

OUT

HD2(30) AV = +2, f = 30MHz

V

= 2V

OUT

P-P

HD2(50) AV = +2, f = 50MHz

V

= 2V

OUT

P-P

HD2(100) AV = +2, f = 100MHz

V

= 2V

OUT

P-P

HD3(30) AV = +2, f = 30MHz

V

= 2V

OUT

P-P

HD3(50) AV = +2, f = 50MHz

V

= 2V

OUT

P-P

HD3(100) AV = +2, f = 100MHz

V

= 2V

OUT

P-P

1 +25oC - 33 ns

1 +25oC - -48 dBc

1 +25oC - -45 dBc

1 +25oC - -35 dBc

1 +25oC - -65 dBc

1 +25oC - -60 dBc

1 +25oC - -40 dBc

LIMITS

UNITSMIN MAX

TABLE 4. ELECTRICAL TEST REQUIREMENTS

MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (SEE TABLE 1)

Interim Electrical Parameters (Pre Burn-In) 1

Final Electrical Test Parameters 1 (Note 1), 2, 3

Group A Test Requirements 1, 2, 3

Groups C and D Endpoints 1

NOTE:

1. PDA applies to Subgroup 1 only.

3-202

Spec Number 511105-883

HFA1120/883

Die Characteristics

DIE DIMENSIONS:

63 x 44 x 19 mils ± 1 mils
1600 x 1130 x 483µm± 25.4µm

METALLIZATION:

Type: Metal 1: AICu(2%)/TiW Type: Metal 2: AICu(2%)
Thickness: Metal 1: 8k

Å ± 0.4kÅ Thickness: Metal 2: 16kÅ ± 0.8kÅ

GLASSIVATION:

Type: Nitride
Thickness: 4k

WORST CASE CURRENT DENSITY:

2.0 x 10

Å ± 0.5kÅ

5

A/cm2at 47.5mA

TRANSISTOR COUNT: 52
SUBSTRATE POTENTIAL (Powered Up): Floating (Recommend Connection to V-)

Metallization Mask Layout

HFA1120/883

+IN

V

BAL

-IN

V-

L

OUT

BAL

V

H

V+

3-203

Spec Number 511105-883

HFA1120/883

Test Circuit

V

IN

K2 = POSITION 1:

V

X

V

=

IO

100

V

X

x100

K2 = POSITION 2:

-I

BIAS

+I

BIAS

V

X

=

50K

V

=

100K
V

Z

(Applies to Table 1)

K1

0.1

+

-

200pF

100K (0.01%)

Z

-

+

HA-5177

NC

470pF

V+

K2

+

100

IEE

10 0.1

510

V-

0.1

7

2

­DUT

3

+

4

K3

5

50

NC

50

NC

6

1

K4

100 100

0.1

K5

1K

V

OUT

NOTE: All Resistors = ±1% (Ω)

ICC

510

0.1

0.1

0.1

510

2

1

510

10 0.1

+

0.1

All Capacitors = ±10% (µF)
Unless Otherwise Noted
Chip Components Recommended

Test Waveforms

SIMPLIFIED TEST CIRCUIT FOR LARGE AND SMALL SIGNAL PULSE RESPONSE (Applies to Table 3)

AV = +1 TEST CIRCUIT AV = +2 TEST CIRCUIT

V+

V

IN

R

S

50Ω

NOTE: VS = ±5V, AV = +1

RS = 50Ω
R

= 100Ω For Small and Large Signals

L

LARGE SIGNAL WAVEFORM SMALL SIGNAL WAVEFORM

V

OUT

+2.5V

+SR

-2.5V -2.5V

510Ω

10%

R

F

90%

+

-

V-

50Ω

90%

10%

50Ω

-SR

V

OUT

2

+2.5V

V+

V

IN

R

S

50Ω

+

-

V-

R

F

360Ω
R

G

360Ω

50Ω

NOTE: VS = ±5V, AV = +2

R

= 50Ω

S

RL=100Ω For Small and Large Signals

V

OUT

+250mV

TR, +OS

-250mV -250mV

10%

90%

90%

10%

50Ω

TF, -OS

V

OUT

2

+250mV

3-204

Spec Number 511105-883