Intersil Corporation HFA1113-883 Datasheet

July 1994

HFA1113/883

Output Limiting, Ultra High Speed

Programmable Gain, Buffer Amplifier

Features

• This Circuit is Processed in Accordance to MIL-STD­883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.

• User Programmable Output Voltage Limiting

• User Programmable For Closed-Loop Gains of +1, -1
or +2 Without Use of External Resistors

• Low Differential Gain and Phase . . . . 0.02%/0.04 Deg.

• Low Distortion (HD3, 30MHz) . . . . . . . . . . -73dBc (Typ)

• Wide -3dB Bandwidth . . . . . . . . . . . . . . . 850MHz (Typ)

• Very High Slew Rate . . . . . . . . . . . . . . . 2400V/µs (Typ)

• Fast Settling (0.1%) . . . . . . . . . . . . . . . . . . . . 13ns (Typ)

• Excellent Gain Flatness (to 100MHz) . . . . 0.07dB (Typ)

• Excellent Gain Accuracy. . . . . . . . . . . . . .0.99V/V (Typ)

• High Output Current . . . . . . . . . . . . . . . . . . 60mA (Typ)

• Fast Overdrive Recovery. . . . . . . . . . . . . . . . <1ns (Typ)

Applications

• Video Switching and Routing

• Pulse and Video Amplifiers

• Wideband Amplifiers

• RF/IF Signal Processing

• Flash A/D Driver

• Medical Imaging Systems

Description

The HFA1113/883 is a closed loop buffer featuring a high
degree of gain accuracy, wide bandwidth, low distortion, and
programmable output limiting. This buffer is the ideal choice
for high frequency applications requiring output limiting,
especially those needing ultra fast overdrive recovery times.
The output limiting function allows the designer to set the
maximum positive and negative output levels, thereby pro­tecting later stages from damage or input saturation. The
sub-nanosecond overdrive recovery time quickly returns the
amplifier to linear operation following an overdrive condition.

Component and composite video systems will also benefit
from this buffer’s performance, as indicated by the excellent
gain flatness, and 0.02%/0.04 Deg. Differential Gain/Phase
specifications (R

= 150Ω).

L

A unique feature of the pinout allows the user to select a volt­age gain of +1, -1, or +2, without the use of any external
components, as described in the “Design Information” sec­tion. Compatibility with existing op amp pinouts provides flex­ibility to upgrade low gain amplifiers, while decreasing
component count. Unlike most buffers, the standard pinout
provides an upgrade path should a higher closed loop gain
be needed at a future date.

This amplifier is available without output limiting as the
HFA1112/883. For applications requiring a standard buffer
pinout, please refer to the HFA1110/883 datasheet.

Ordering Information

TEMPERATURE

PART NUMBER

HFA1113MJ/883 -55oC to +125oC 8 Lead CerDIP
HFA1113ML/883 -55oC to +125oC 20 Lead Ceramic LCC

RANGE PACKAGE

Pinouts

HFA1113/883

(CERDIP)

TOP VIEW

NC

1
2

-IN
3

+IN

4

V-

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207

300

8

V

300

-

+

| Copyright © Intersil Corporation 1999

H

7

V+

6

OUT

5

V

L

3-189

HFA1113/883

(CLCC)

TOP VIEW

NC

NC

NC

NC

NC

3212019

NC

4

-IN

5
6

NC

+IN

7

NC NC

8

300

300

-

+

9101112

NC

L

V-

V

NC

V

18

V+

17
16

NC
OUT

15
14

13

NC

Spec Number 511106-883

File Number 3618.1

H

Specifications HFA1113/883

Absolute Maximum Ratings Thermal Information

Voltage Between V+ and V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V

Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V-

Voltage at VH or VL Terminal . . . . . . . . . . . . . .(V+) +2V to (V-) - 2V

Output Current (50% Duty Cycle) . . . . . . . . . . . . . . . . . . . . . . . .±55mA

Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .< 2000V

Storage Temperature Range . . . . . . . . . . . . . . -65oC ≤ TA≤ +150oC

Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Operating Conditions

Operating Supply Voltage (±VS) . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5V

Operating Temperature Range. . . . . . . . . . . . .-55oC ≤ TA≤ +125oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Device Tested at: V

PARAMETERS SYMBOL CONDITIONS

Output Offset Voltage V

Power Supply
Rejection Ratio

Non-Inverting Input (+IN)
Current

+IN Common
Mode Rejection

+IN Resistance +R

Gain (V

Gain (V

Gain (V

OUT

OUT

OUT

=2V

=2V

=4V

P-P

P-P

P-P

Output Voltage
Swing

Output Voltage
Swing

Output Current +I

= ±5V, R

SUPPLY

SOURCE

OS

PSRRP ∆V

PSRRN ∆V

I

BSP

CMS

IBP

IN

)A

)A

)A

V

OP100

V

ON100

V

V

ON50

-I

VP1

VM1

VP2

OP50

OUT

OUT

=0Ω, RL= 100Ω, V

VCM= 0V 1 +25oC -25 25 mV

= ±1.25V,

SUPPLY

V+ = 6.25V, V-= -5V,
V+ = 3.75V, V-= -5V

= ±1.25V,

SUPPLY

V+ = 5V, V-= -6.25V,
V+ = 5V, V-= -3.75V

VCM= 0V 1 +25oC -40 40 µA

∆VCM= ±2V,
V+ = 3V, V-= -7V,
V+ = 7V, V-= -3V

Note 1 1 +25oC25-kΩ

AV= +1,
VIN= -1V to +1V

AV= -1,
VIN= -1V to +1V

AV= +2,
VIN= -1V to +1V

AV=-1
RL= 100Ω

AV=-1
RL= 100Ω

AV=-1
RL=50Ω

AV=-1
RL=50Ω

VIN= -3.2V 1 +25oC3-V
VIN= -2.7V 2, 3 +125oC, -55oC 2.5 - V
VIN= +3.2V 1 +25oC - -3 V
VIN= +2.7V 2, 3 +125oC, -55oC - -2.5 V
VIN= -2.7V 1, 2 +25oC, +125oC 2.5 - V
VIN= -2.25V 3 -55oC 1.5 - V
VIN= +2.7V 1, 2 +25oC, +125oC - -2.5 V
VIN=+2.25V 3 -55oC - -1.5 V

Note 2 1, 2 +25oC, +125oC50 -mA

Note 2 1, 2 +25oC, +125oC - -50 mA

Thermal Resistance θ

CerDIP Package . . . . . . . . . . . . . . . . . 115oC/W 30oC/W

Ceramic LCC Package . . . . . . . . . . . . 75oC/W 23oC/W

Maximum Package Power Dissipation at +75oC

CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.87W

Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33W

Package Power Dissipation Derating Factor above +75oC

CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8.7mW/oC

Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . .13.3mW/oC

RL ≥ 50Ω

= 0V, Unless Otherwise Specified.

OUT

GROUP A

SUBGROUPS TEMPERATURE

2, 3 +125oC, -55oC -40 40 mV

1 +25oC39-dB

2, 3 +125oC, -55oC35-dB

1 +25oC39-dB

2, 3 +125oC, -55oC35-dB

2, 3 +125oC, -55oC -65 65 µA

1 +25oC-40µA/V

2, 3 +125oC, -55oC-50µA/V

2, 3 +125oC, -55oC20-kΩ

1 +25oC 0.980 1.020 V/V

2, 3 +125oC, -55oC 0.975 1.025 V/V

1 +25oC 0.980 1.020 V/V

2, 3 +125oC, -55oC 0.975 1.025 V/V

1 +25oC 1.960 2.040 V/V

2, 3 +125oC, -55oC 1.950 2.050 V/V

3 -55oC30-mA

3 -55oC - -30 mA

JA

LIMITS

θ

JC

UNITSMIN MAX

3-190

Spec Number 511106-883

Specifications HFA1113/883

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

Device Tested at: V

PARAMETERS SYMBOL CONDITIONS

Quiescent Power
Supply Current

Limiting Accuracy VHCLMP AV= -1, VIN= -1.6V,

VH or VL Input Current VHBIAS VH= 1V 1 +25oC - 200 µA

NOTES:

1. Guaranteed from +IN Common Mode Rejection Test, by: +RIN= 1/CMS

2. Guaranteed from V

= ±5V, R

SUPPLY

I

CC

I

EE

VLCLMP AV= -1, VIN= +1.6V,

VLBIAS VL= -1V 1 +25oC -200 - µA

Test with RL=50Ω, by: I

OUT

=0Ω, RL= 100Ω, V

SOURCE

= 0V, Unless Otherwise Specified.

OUT

GROUP A

SUBGROUPS TEMPERATURE

LIMITS

UNITSMIN MAX

RL= 100Ω 1 +25oC1426mA

2, 3 +125oC, -55oC - 33 mA

RL= 100Ω 1 +25oC -26 -14 mA

2, 3 +125oC, -55oC -33 - mA

1 +25oC -150 150 mV

VH=1V

2, 3 +125oC, -55oC -200 200 mV

1 +25oC -150 150 mV

VL= -1V

2, 3 +125oC, -55oC -200 200 mV

2, 3 +125oC, -55oC - 300 µA

2, 3 +125oC, -55oC -300 - µA

.

IBP

OUT=VOUT

/50Ω.

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

Table 2 Intentionally Left Blank.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

Device Characterized at: V

= ±5V, RL=100Ω, Unless Otherwise Specified.

SUPPLY

PARAMETERS SYMBOL CONDITIONS NOTES TEMPERATURE

-3dB Bandwidth BW(-1) AV= -1, V
BW(+1) AV= +1, V
BW(+2) AV= +2, V

Gain Flatness GF30 AV= +2, f ≤ 30MHz,

V

= 200mV

OUT

GF50 AV= +2, f ≤ 50MHz,

V

= 200mV

OUT

GF100 AV= +2, f ≤ 100MHz,

V

= 200mV

OUT

Slew Rate +SR(-1) AV= -1, V

-SR(-1) AV= -1, V

+SR(+1) AV= +1, V

-SR(+1) AV= +1, V

+SR(+2) AV= +2, V

-SR(+2) AV= +2, V

OUT

OUT
OUT

OUT
OUT

OUT
OUT
OUT
OUT

= 200mV

= 200mV
= 200mV

P-P

P-P

P-P

= 5V

P-P

= 5V

P-P

= 5V

P-P

= 5V

P-P

= 5V

P-P

= 5V

P-P

P-P

P-P
P-P

1 +25oC 450 - MHz
1 +25oC 500 - MHz
1 +25oC 350 - MHz
1 +25oC-±0.04 dB

1 +25oC-±0.08 dB

1 +25oC-±0.22 dB

1, 2 +25oC 1500 - V/µs
1, 2 +25oC 1800 - V/µs
1, 2 +25oC 900 - V/µs
1, 2 +25oC 800 - V/µs
1, 2 +25oC 1200 - V/µs
1, 2 +25oC 1100 - V/µs

LIMITS

UNITSMIN MAX

3-191

Spec Number 511106-883

Specifications HFA1113/883

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

Device Characterized at: V

PARAMETERS SYMBOL CONDITIONS NOTES TEMPERATURE

Rise and Fall Time TR(-1) AV= -1, V

Overshoot +OS(-1) AV= -1, V

Settling Time TS(0.1) AV= +2, to 0.1%, V

2nd Harmonic Distortion HD2(30) AV= +2, f =30MHz,

3rd Harmonic Distortion HD3(30) AV= +2, f =30MHz,

NOTES:

1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-

eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot-to-lot and within lot variation.

2. Measured between 10% and 90% points.

3. For 200ps input transition times. Overshoot decreases as input transition times increase, especially for AV= +1. Please refer to

Performance Curves.

= ±5V, RL=100Ω, Unless Otherwise Specified.

SUPPLY

= 0.5V

OUT

TF(-1) AV= -1, V
TR(+1) AV= +1, V
TF(+1) AV= +1, V
TR(+2) AV= +2, V
TF(+2) AV= +2, V

-OS(-1) AV= -1, V

+OS(+1) AV= +1, V

-OS(+1) AV= +1, V

+OS(+2) AV= +2, V

-OS(+2) AV= +2, V

OUT

OUT
OUT
OUT

OUT
OUT
OUT

OUT

OUT

OUT

OUT

= 0.5V

= 0.5V
= 0.5V
= 0.5V

= 0.5V
= 0.5V
= 0.5V

= 0.5V

= 0.5V

= 0.5V

= 0.5V

OUT

TS(0.05) AV= +2, to 0.05%,

V

= 2V to 0V

OUT

V

= 2V

OUT

P-P

HD2(50) AV= +2, f =50MHz,

V

= 2V

OUT

P-P

HD2(100) AV= +2, f =100MHz,

V

= 2V

V

OUT

OUT

= 2V

P-P

P-P

HD3(50) AV= +2, f =50MHz,

V

= 2V

OUT

P-P

HD3(100) AV= +2, f =100MHz,

V

= 2V

OUT

P-P

LIMITS

P-P
P-P

P-P
P-P
P-P

P-P
P-P
P-P

P-P

P-P

P-P

P-P

1, 2 +25oC - 750 ps
1, 2 +25oC - 800 ps
1, 2 +25oC - 750 ps
1, 2 +25oC - 750 ps
1, 2 +25oC - 1000 ps
1, 2 +25oC - 1000 ps
1, 3 +25oC - 30 %
1, 3 +25oC - 25 %
1, 3 +25oC - 65 %
1, 3 +25oC - 60 %
1, 3 +25oC - 20 %
1, 3 +25oC - 20 %

= 2V to 0V 1 +25oC - 20 ns

1 +25oC - 33 ns

1 +25oC - -45 dBc

1 +25oC - -40 dBc

1 +25oC - -35 dBc

1 +25oC - -65 dBc

1 +25oC - -55 dBc

1 +25oC - -45 dBc

UNITSMIN MAX

TABLE 4. ELECTRICAL TEST REQUIREMENTS

MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (SEE TABLE 1)

Interim Electrical Parameters (Pre Burn-In) 1
Final Electrical Test Parameters 1 (Note 1), 2, 3
Group A Test Requirements 1, 2, 3
Groups C and D Endpoints 1

NOTE:

1. PDA applies to Subgroup 1 only.

3-192

Spec Number 511106-883

HFA1113/883

Die Characteristics

DIE DIMENSIONS:

63 x 44 x 19 mils ± 1 mils
1600 x 1130x 483µm ± 25.4µm

METALLIZATION:

Type: Metal 1: AICu(2%)/TiW Type: Metal 2: AICu(2%)
Thickness: Metal 1: 8k

Å ± 0.4kÅ Thickness: Metal 2: 16kÅ ± 0.8kÅ

GLASSIVATION:

Type: Nitride
Thickness: 4k

WORST CASE CURRENT DENSITY:

2.0 x 10

Å ± 0.5kÅ

5

A/cm2at 47.5mA

TRANSISTOR COUNT: 52
SUBSTRATE POTENTIAL (Powered Up): Floating (Recommend Connection to V-)

Metallization Mask Layout

HFA1113/883

NC

V

NC

+IN

V-

L

OUT

-IN

V

V+

H

3-193

Spec Number 511106-883

HFA1113/883

Test Circuit

-V

IN

+V

IN

V

=

100K
V

Z

Z

+I

BIAS

(Applies to Table 1)

V

L

V+

0.1

100K (0.01%)

-

+

HA-5177

NC

K3

50

+

10 0.1

0.1

+

0.1

2

3

10 0.1

V

Y

=V

os

OUT

100

V

Y

0.1

510

7

5

­DUT

+

4

NC

I

8

50

EE

6

100 100

0.1

K4

0.1

470pF

510

K3

NOTE:
Terminal Numbers Refer to CerDIP Package

All Resistors = ±1% (Ω)

1K

+

­x100

V

0.1

I

CC

NC

1

K2

2
1

K1

2

0.1

All Capacitors = ±10% (µF)

V-

V

H

Unless Otherwise Noted
Chip Components Recommended
For AV= +1, K1 =Position 1, K2 = Position 1
For AV= +2, K1 =Position 1, K2 = Position 2, -VIN=0V
For AV= -1, K1 =Position 1, K2 = Position 2, +VIN=0V

Test Waveforms

SIMPLIFIED TEST CIRCUIT FOR LARGE AND SMALL SIGNAL PULSE RESPONSE (Applies to Table 3)

AV= +1 or +2 TEST CIRCUIT AV= -1 TEST CIRCUIT

V+

7

3

V

IN

R

S

50Ω

R

NOTE:
VS= ±5V, RG=0Ω for AV= +2, RG= ∞ for AV=+1

RF= Internal, RS=50Ω
RL= 100Ω For Small and Large Signals
Terminal Numbers Refer to CerDIP Package

LARGE SIGNAL WAVEFORM SMALL SIGNAL WAVEFORM

V

OUT

+2.5V

+SR

-2.5V -2.5V

10%

2

G

90%

6

+

-

V-

50Ω

4

90%

10%

50Ω

-SR

V

OUT

2

+2.5V

V+

7

2

V

IN

R

S

50Ω

6

-

3

+

4

V-

50Ω

NOTE:
VS= ±5V, AV=-1

RF= Internal
RS=50Ω, RL= 100Ω For Small and Large Signals
Terminal Numbers Refer to CerDIP Package

V

OUT

+250mV

TR, +OS

-250mV -250mV

10%

90%

90%

10%

50Ω

V

OUT

2

+250mV

TF, -OS

3-194

Spec Number 511106-883

Burn-In Circuits

HFA1113/883

HFA1113MJ/883 CERAMIC DIP

1

NC

2

D4

V-

D2 C2

3
4

NOTES:
R1 = 100Ω, ±5% (Per Socket)

C1 = C2= 0.01µF (Per Socket) or 0.1µF (Per Row) Minimum
D1 = D2= 1N4002 or Equivalent (Per Board)
D3 = D4= 1N4002 or Equivalent (Per Socket)
V+ = +5.5V±0.5V
V- = -5.5V ±0.5V

HFA1113ML/883 CERAMIC LCC

3212019

4

300

5

NC

R1

6
7
8

9101112

300

300

-

+

300

-

+

8
7
6
5

18
17
16
15
14

13

D3

V+

C1 D1

R1

D3

V+

C1 D1

R2

D4

V-

D2

C2

NOTES:
R1 = 1kΩ, ±5% (Per Socket)

R2 = 100Ω, ±5% (Per Socket)
C1 = C2= 0.01µF (Per Socket) or 0.1µF (Per Row) Minimum
D1 = D2= 1N4002 or Equivalent (Per Board)
D3 = D4= 1N4002 or Equivalent (Per Socket)
V+ = +5.5V±0.5V
V- = -5.5V ±0.5V

Spec Number 511106-883

3-195